Output swing headroom (to positive supply) (typ) (V): -0.022 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Vos (offset voltage at 25°C) (max) (mV): 0.036 Offset drift (typ) (µV/°C): 0.015 Input bias current (max) (pA): 4 GBW (typ) (MHz): 3 Features: Zero Drift Slew rate (typ) (V/µs): 4 Rail-to-rail: In to V-, Out Iq per channel (typ) (mA): 0.93 Vn at 1 kHz (typ) (nV√Hz): 35 CMRR (typ) (dB): 130 Rating: Space Operating temperature range (°C): -55 to 125 Iout (typ) (A): 0.015 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -1.8 Output swing headroom (to negative supply) (typ) (V): 0.04 Output swing headroom (to positive supply) (typ) (V): -0.022

Output swing headroom (to positive supply) (typ) (V): -0.03 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Vos (offset voltage at 25°C) (max) (mV): 0.01 Offset drift (typ) (µV/°C): 0.02 Input bias current (max) (pA): 200 GBW (typ) (MHz): 0.35 Features: EMI Hardened, Zero Drift Slew rate (typ) (V/µs): 0.16 Rail-to-rail: In, Out Iq per channel (typ) (mA): 0.017 Vn at 1 kHz (typ) (nV√Hz): 65 CMRR (typ) (dB): 130 Rating: HiRel Enhanced Product Operating temperature range (°C): -55 to 125 Iout (typ) (A): 0.005 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.03 Output swing headroom (to positive supply) (typ) (V): -0.03

Architecture: FET / CMOS Input, Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 88 BW at Acl (MHz): 8.8 Acl, min spec gain (V/V): 10 Slew rate (typ) (V/µs): 28 Vn at flatband (typ) (nV√Hz): 5.8 Vn at 1 kHz (typ) (nV√Hz): 5.8 Iq per channel (typ) (mA): 1.15 Vos (offset voltage at 25°C) (max) (mV): 0.15 Rail-to-rail: In to V-, Out Features: Decompensated Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 100 Input bias current (max) (pA): 50 Offset drift (typ) (µV/°C): 1 Iout (typ) (mA): 21

Architecture: FET / CMOS Input, Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5 GBW (typ) (MHz): 88 BW at Acl (MHz): 88 Acl, min spec gain (V/V): 10 Slew rate (typ) (V/µs): 28 Vn at flatband (typ) (nV√Hz): 5.8 Vn at 1 kHz (typ) (nV√Hz): 5.8 Iq per channel (typ) (mA): 1.15 Vos (offset voltage at 25°C) (max) (mV): 1.35 Rail-to-rail: In to V-, Out Features: Decompensated Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 100 Input bias current (max) (pA): 1 Offset drift (typ) (µV/°C): 1 Iout (typ) (mA): 21

THD + N at 1 kHz (typ) (%): 0.003 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Vos (offset voltage at 25°C) (max) (mV): 0.5 Offset drift (typ) (µV/°C): 0.35 Input bias current (max) (pA): 10 GBW (typ) (MHz): 4.5 Slew rate (typ) (V/µs): 2.5 Rail-to-rail: In, Out Iq per channel (typ) (mA): 0.96 Vn at 1 kHz (typ) (nV√Hz): 20 CMRR (typ) (dB): 106 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.033 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.038 Output swing headroom (to positive supply) (typ) (V): -0.032 THD + N at 1 kHz (typ) (%): 0.003

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 12 Slew rate (typ) (V/µs): 2.8 Vos (offset voltage at 25°C) (max) (mV): 1.5 Iq per channel (typ) (mA): 0.11 Vn at 1 kHz (typ) (nV√Hz): 17 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 6.6 Input bias current (max) (pA): 100000 CMRR (typ) (dB): 100 Iout (typ) (A): 0.015 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -0.9 Output swing headroom (to negative supply) (typ) (V): 0.07 Output swing headroom (to positive supply) (typ) (V): -0.075

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 1 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.037 Vn at 1 kHz (typ) (nV√Hz): 70 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 3.3 Input bias current (max) (pA): 38000 CMRR (typ) (dB): 93 Iout (typ) (A): 0.01 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -0.9 Output swing headroom (to negative supply) (typ) (V): 0.06 Output swing headroom (to positive supply) (typ) (V): -0.07

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 1 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.037 Vn at 1 kHz (typ) (nV√Hz): 70 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 3.3 Input bias current (max) (pA): 38000 CMRR (typ) (dB): 93 Iout (typ) (A): 0.01 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -0.9 Output swing headroom (to negative supply) (typ) (V): 0.06 Output swing headroom (to positive supply) (typ) (V): -0.07

3rd harmonic (dBc): 59 Frequency of harmonic distortion measurement (MHz): 5 Architecture: Voltage FB Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.8 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 11 GBW (typ) (MHz): 110 BW at Acl (MHz): 280 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 560 Vn at flatband (typ) (nV√Hz): 9.2 Vn at 1 kHz (typ) (nV√Hz): 9.5 Iq per channel (typ) (mA): 4.25 Vos (offset voltage at 25°C) (max) (mV): 8 Rail-to-rail: In to V-, Out Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 80 Input bias current (max) (pA): 10000000 Offset drift (typ) (µV/°C): 30 Iout (typ) (mA): 75 2nd harmonic (dBc): 60 3rd harmonic (dBc): 59 Frequency of harmonic distortion measurement (MHz): 5

Output swing headroom (to negative supply) (typ) (V): 0.005 Output swing headroom (to positive supply) (typ) (V): -2 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 32 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 3 Rail-to-rail: In to V- GBW (typ) (MHz): 0.7 Slew rate (typ) (V/µs): 0.5 Vos (offset voltage at 25°C) (max) (mV): 2 Iq per channel (typ) (mA): 0.35 Vn at 1 kHz (typ) (nV√Hz): 40 Rating: Space Operating temperature range (°C): -55 to 125 Offset drift (typ) (µV/°C): 7 Input bias current (max) (pA): 50000 CMRR (typ) (dB): 80 Iout (typ) (A): 0.03 Architecture: Bipolar Radiation, TID (typ) (krad): 100 Radiation, SEL (MeV·cm2/mg): Bipolar Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -1.5 Output swing headroom (to negative supply) (typ) (V): 0.005 Output swing headroom (to positive supply) (typ) (V): -2