BTS133


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路

描述: N channel vertical power FET in Smart SIPMOS® technology. Providing embedded protection functions.

EAS/Avalanche Energy: 2000.0mJ Features: 24V COMPATIBLE I[D ]: 3.8A I[D(lim)] min: 21.0A I[L(LIM)] min: 21.0A I[SC] max: 64.0A Load Current: 3.8A Mounting: THT P[tot] max: 90.0W V[DS] max: 60.0V I[L(nom)]: 3.8A Operating Temperature max: 150.0°C E[AS](Energy capability): 2000.0mJ t[off](Turn OFF time) max: 170.0µs t[on](Turn ON time) max: 100.0µs Family: Classic HITFET™ Channels: 1.0 R[DS (on)](@ Tj = 25°C): 50.0mΩ R[DS (on)](@ Tj = 150°C) max: 120.0mΩ Protection strategy: Latch
Nominal Load Current per channel: 3.8A I[L](Short Circuit Current): 21.0A Recommended Operating Voltage max: 60.0V Classification: n.a Currently planned availability until at least: n.a Diagnostics: n.a

BTS141


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路

描述: N channel vertical power FET in Smart SIPMOS® chip on chip technology. Providing embedded protection functions.

EAS/Avalanche Energy: 4000.0mJ Features: 24V COMPATIBLE I[D ]: 5.1A I[D(lim)] min: 25.0A I[L(LIM)] min: 25.0A Load Current: 5.1A Mounting: THT P[tot] max: 149.0W V[DS] max: 60.0V I[L(nom)]: 12.0A Operating Temperature max: 150.0°C E[AS](Energy capability): 4000.0mJ t[off](Turn OFF time) max: 170.0µs t[on](Turn ON time) max: 100.0µs Family: Classic HITFET™ Channels: 1.0 R[DS (on)](@ Tj = 25°C): 31.0mΩ R[DS (on)](@ Tj = 150°C) max: 68.0mΩ Protection strategy: Latch Nominal Load Current per channel: 5.1A
I[L](Short Circuit Current): 25.0A Recommended Operating Voltage max: 60.0V Classification: n.a Currently planned availability until at least: n.a Diagnostics: n.a

BTS141TC


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路

描述: N channel vertical power FET in Smart SIPMOS® chip on chip technology. Providing embedded protection functions.

EAS/Avalanche Energy: 4000.0mJ I[D ]: 5.1A I[D(lim)] min: 25.0A I[L(LIM)] min: 25.0A Load Current: 5.1A Mounting: SMT P[tot] max: 149.0W V[DS] max: 60.0V I[L(nom)]: 5.1A Operating Temperature max: 150.0°C E[AS](Energy capability): 4000.0mJ t[off](Turn OFF time) max: 170.0µs t[on](Turn ON time) max: 100.0µs Family: Classic HITFET™ Channels: 1.0 R[DS (on)](@ Tj = 25°C): 31.0mΩ R[DS (on)](@ Tj = 150°C) max: 68.0mΩ Protection strategy: Latch Nominal Load Current per channel: 5.1A I[L](Short Circuit Current): 25.0A
Recommended Operating Voltage max: 60.0V Classification: n.a Currently planned availability until at least: n.a Diagnostics: n.a

BTS3028SDL


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路

描述: The BTS3028SDL is a single channel low-side MOSFET power switch in PG-T0252-3-11 package providing embedded protective functions.

EAS/Avalanche Energy: 350.0mJ Features: 24V COMPATIBLE I[D ]: 5.0A I[D(lim)] min: 18.0A I[L(LIM)] min: 18.0A Mounting: SMT V[DS] max: 60.0V Load Current: 5.8A Diagnostic Features: Output Status Control Interface: Discrete I[L(nom)]: 5.0A Operating Temperature max: 150.0°C E[AS](Energy capability): 350.0mJ t[off](Turn OFF time) max: 120.0µs t[on](Turn ON time) max: 100.0µs Classification: - Channels: 1.0 R[DS (on)](@ Tj = 25°C): 32.0mΩ R[DS (on)](@ Tj = 150°C) max: 91.0mΩ Diagnostics: -
Protection strategy: Latch Nominal Load Current per channel: 5.0A I[L](Short Circuit Current): 18.0A Recommended Operating Voltage max: 60.0V Family: Classic HITFET™ 24V Currently planned availability until at least: 2038

BTS3046SDL


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路

描述: The BTS3046SDL is a single channel low-side MOSFET power switch in PG-T0252-3-11 package providing embedded protective functions.

EAS/Avalanche Energy: 140.0mJ Features: 24V COMPATIBLE I[D ]: 3.6A I[D(lim)] min: 10.0A I[L(LIM)] min: 10.0A Mounting: SMT V[DS] max: 60.0V Load Current: 4.3A Diagnostic Features: Output Status Control Interface: Discrete I[L(nom)]: 3.6A Operating Temperature max: 150.0°C E[AS](Energy capability): 140.0mJ t[off](Turn OFF time) max: 120.0µs t[on](Turn ON time) max: 100.0µs Classification: - Channels: 1.0 R[DS (on)](@ Tj = 25°C): 54.0mΩ R[DS (on)](@ Tj = 150°C) max: 134.0mΩ Diagnostics: -
Protection strategy: Latch Nominal Load Current per channel: 3.6A I[L](Short Circuit Current): 10.0A Recommended Operating Voltage max: 60.0V Family: Classic HITFET™ 24V Currently planned availability until at least: 2038

BTS3028SDR


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路

描述: The BTS3028SDR is a single channel low-side MOSFET power switch in PG-T0252-3-11 package providing embedded protective functions.

EAS/Avalanche Energy: 350.0mJ Features: 24V COMPATIBLE I[D ]: 5.0A I[D(lim)] min: 18.0A I[L(LIM)] min: 18.0A Mounting: SMT V[DS] max: 60.0V Load Current: 5.8A Diagnostic Features: Output Status Control Interface: Discrete I[L(nom)]: 5.0A Operating Temperature max: 150.0°C E[AS](Energy capability): 350.0mJ t[off](Turn OFF time) max: 120.0µs t[on](Turn ON time) max: 100.0µs Classification: - Channels: 1.0 R[DS (on)](@ Tj = 25°C): 32.0mΩ R[DS (on)](@ Tj = 150°C) max: 91.0mΩ Diagnostics: -
Protection strategy: Auto-restart Nominal Load Current per channel: 5.0A I[L](Short Circuit Current): 18.0A Recommended Operating Voltage max: 60.0V Family: Classic HITFET™ 24V Currently planned availability until at least: 2038

BTS3104SDR


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路

描述: The BTS3104SDR is a single channel low-side MOSFET power switch in PG-T0252-3-11 package providing embedded protective functions.

EAS/Avalanche Energy: 50.0mJ Features: 24V COMPATIBLE I[D ]: 2.0A I[D(lim)] min: 6.0A Mounting: SMT V[DS] max: 60.0V Load Current: 2.5A Diagnostic Features: Output Status Control Interface: Discrete I[L(nom)]: 2.0A Recommended Operating Voltage max: 60.0V Operating Temperature max: 150.0°C E[AS](Energy capability): 50.0mJ t[off](Turn OFF time) max: 120.0µs t[on](Turn ON time) max: 100.0µs Classification: - Channels: 1.0 R[DS (on)](@ Tj = 25°C): 121.0mΩ R[DS (on)](@ Tj = 150°C) max: 323.0mΩ Diagnostics: -
Protection strategy: Auto-restart Nominal Load Current per channel: 2.0A I[L](Short Circuit Current): 6.0A Family: Classic HITFET™ 24V Currently planned availability until at least: 2038

BTS3104SDL


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路

描述: The BTS3104SDL is a single channel low-side MOSFET power switch in PG-T0252-3-11 package providing embedded protective functions.

EAS/Avalanche Energy: 50.0mJ Features: 24V COMPATIBLE I[D ]: 2.0A I[D(lim)] min: 6.0A Mounting: SMT V[DS] max: 60.0V Load Current: 2.5A Diagnostic Features: Output Status Control Interface: Discrete I[L(nom)]: 2.0A Recommended Operating Voltage max: 60.0V Operating Temperature max: 150.0°C E[AS](Energy capability): 50.0mJ t[off](Turn OFF time) max: 120.0µs t[on](Turn ON time) max: 100.0µs Classification: - Channels: 1.0 R[DS (on)](@ Tj = 25°C): 121.0mΩ R[DS (on)](@ Tj = 150°C) max: 323.0mΩ Diagnostics: -
Protection strategy: Latch Nominal Load Current per channel: 2.0A I[L](Short Circuit Current): 6.0A Currently planned availability until at least: 2038 Family: Classic HITFET™ 24V

BTS134D


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路

描述: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.

EAS/Avalanche Energy: 3000.0mJ I[D ]: 3.5A I[D(lim)] min: 7.1A I[L(LIM)] min: 7.1A Mounting: SMT P[tot] max: 43.0W V[DS] max: 42.0V Control Interface: Discrete Load Current: 4.6A I[L(nom)]: 3.5A Operating Temperature max: 150.0°C E[AS](Energy capability): 3000.0mJ t[off](Turn OFF time) max: 100.0µs t[on](Turn ON time) max: 100.0µs Classification: - Channels: 1.0 R[DS (on)](@ Tj = 25°C): 45.0mΩ R[DS (on)](@ Tj = 150°C) max: 100.0mΩ Diagnostics: - Nominal Load Current per channel: 3.5A
I[L](Short Circuit Current): 7.1A Recommended Operating Voltage max: 42.0V Protection strategy: Auto-restart Family: Classic HITFET™ 12V Currently planned availability until at least: 2038

BTS244ZE3062A


数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路

描述: The BTS244Z E3062A is an automotive low-side semperature switch

EAS/Avalanche Energy: 1650.0mJ I[D ]: 26.0A Load Current: 26.0A Mounting: SMT P[tot] max: 170.0W V[DS] max: 55.0V I[L(nom)]: 19.0A Recommended Operating Voltage max: 55.0V Operating Temperature max: 175.0°C E[AS](Energy capability): 1650.0mJ t[off](Turn OFF time) max: 0.1µs t[on](Turn ON time) max: 0.13µs Family: TEMPFET™ Channels: 1.0 R[DS (on)](@ Tj = 150°C) max: 13.0mΩ Protection strategy: Latch Nominal Load Current per channel: 26.0A Classification: n.a Currently planned availability until at least: n.a Diagnostics: n.a