IR2213C_8

供应商:

描述: 1200 V high- and low-side gate driver IC bare die for IGBT and MOSFET

物料参数

Channels:2.0
Configuration:High-side and low-side
Input Vcc:NoneV
Isolation Type:Functional levelshift
Output Current(Source):2.0A
Output Current(Sink):2.5A
Qualification:Industrial
Turn Off Propagation Delay:225.0ns
Turn On Propagation Delay:280.0ns
VBS UVLO(On):10.2V
VBS UVLO(Off):9.3V
VCC UVLO(On):10.2V
VCC UVLO(Off):9.3V
Voltage Class:1200.0V
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