IGC100T75H12RDYA
制造商:
描述: Unleashing the Power of Infineons Cutting-Edge Si IGBT Technology
物料参数
| V[CE]: | 750.0V |
| I[Cn]: | 320.0A |
| T[vj] [°C] max: | 185.0 |
| V[CE(sat)](Tvj=185°C @15V/200A): | 1.2V |
| V[CE(sat)](Tvj=25°C @15V/320A): | 1.29V |
| V[CE(sat)](Tvj=25°C @15V/200A): | 1.15V |