INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战：高能效、移动性和安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

IMBG120R234M2H

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数据:

简介: CoolSiC™ MOSFET discrete 1200 V G2 in TO-263-7 package

C[iss]: 290.0pF

C[oss]: 9.6pF

Operating Temperature max: 175.0°C

I[D ](@ T[C]=25°C): 8.1A

Mounting: SMD

P[tot](@ T[A]=25°C) max: 75.0W

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AIMZHN120R120M1T

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数据:

简介: Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L, 120mΩ

I[D ](@25°C) max: 22.0A

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Automotive

R[DS (on)](@ Tj = 25°C): 117.0mΩ

V[DS] max: 1200.0V

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IMBG65R260M1H

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数据:

简介: SiC MOSFET in compact SMD package

Operating Temperature max: 175.0°C

P[tot] max: 65.0W

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 260.0mΩ

V[DS] max: 650.0V

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IMW65R107M1H

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数据:

简介: CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 3–pin package

P[tot] max: 75.0W

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 107.0mΩ

V[DS] max: 650.0V

Technology: CoolSiC™ G1

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IMBG65R107M1H

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数据:

简介: SiC MOSFET in compact SMD package

Operating Temperature max: 175.0°C

P[tot] max: 110.0W

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 107.0mΩ

V[DS] max: 650.0V

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AIMBG120R120M1

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数据:

简介: Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in D2PAK-7L, 120mΩ

I[D ](@25°C) max: 22.0A

Operating Temperature max: 175.0°C

V[DS] max: 1200.0V

VGSS, on: 20

VGSS, off: 0

Qualification: Automotive

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IMZA65R107M1H

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数据:

简介: CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package

P[tot] max: 75.0W

Pin Count: 4.0Pins

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 107.0mΩ

V[DS] max: 650.0V

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IMBG120R090M1H

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数据:

简介: CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package

C[iss]: 763.0pF

C[oss]: 39.0pF

I[D ](@25°C) max: 26.0A

Mounting: SMD

Operating Temperature max: 175.0°C

P[tot](@ T[A]=25°C) max: 136.0W

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IMT65R163M1H

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数据:

简介: CoolSiC™ MOSFET discrete 650 V in TOLL package

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 163.0mΩ

V[DS] max: 650.0V

Technology: CoolSiC™ G1

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IMYH200R100M1H

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数据:

简介: CoolSiC™ 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package

C[iss]: 1215.0pF

C[oss]: 40.0pF

I[D ](@25°C) max: 26.0A

Mounting: THT

P[tot](@ T[A]=25°C) max: 217.0W

Package: PG-TO247-4-PLUS-NT14

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