INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战：高能效、移动性和安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

AIMBG75R090M1H

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数据:

简介: The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability.

I[D ](@25°C) max: 24.0A

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Automotive

R[DS (on)](@ Tj = 25°C): 90.0mΩ

Technology: CoolSiC™ G1

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AIMBG120R160M1

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数据:

简介: Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in D2PAK-7L, 160mΩ

C[iss]: 350.0pF

C[oss]: 20.0pF

Q[G]: 14.0nC

R[thJC] max: 1.42K/W

P[tot](@ T[A]=25°C) max: 106.0W

Package: TO-263-7

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AIMDQ75R090M1H

分类:
数据:

简介: The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability.

I[D ](@25°C) max: 24.0A

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Automotive

R[DS (on)](@ Tj = 25°C): 90.0mΩ

Technology: CoolSiC™ G1

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IMW120R090M1H

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数据:

简介: CoolSiC™ 1200V SiC Trench MOSFET in TO247-3 package

Qualification: Industrial

R[DS (on)](@18V): 90.0mΩ

C[iss]: 707.0pF

C[oss]: 39.0pF

I[D ](@25°C) max: 26.0A

Mounting: THT

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AIMZA75R090M1H

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数据:

简介: The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability

I[D ](@25°C) max: 23.0A

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Automotive

R[DS (on)](@ Tj = 25°C): 90.0mΩ

V[DS] max: 750.0V

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AIMDQ75R140M1H

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数据:

简介: The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability.

I[D ](@25°C) max: 17.0A

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Automotive

R[DS (on)](@ Tj = 25°C): 140.0mΩ

V[DS] max: 750.0V

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IMBG120R220M1H

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数据:

简介: CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package

C[iss]: 312.0pF

C[oss]: 14.0pF

I[D ](@25°C) max: 13.0A

Mounting: SMD

Operating Temperature max: 175.0°C

P[tot](@ T[A]=25°C) max: 83.0W

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IMT65R083M1H

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数据:

简介: CoolSiC™ MOSFET discrete 650 V in TOLL package

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 83.0mΩ

V[DS] max: 650.0V

Technology: CoolSiC™ G1

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AIMBG120R080M1

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数据:

简介: Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in D2PAK-7L, 80mΩ

I[D ](@25°C) max: 30.0A

Operating Temperature max: 175.0°C

V[DS] max: 1200.0V

Qualification: Automotive

Package: TO-263-7

VGSS, off: 0

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IMW65R083M1H

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数据:

简介: CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 3–pin package

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 83.0mΩ

V[DS] max: 650.0V

Technology: CoolSiC™ G1

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