INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战：高能效、移动性和安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

IMZA75R090M1H

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数据:

简介: The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability

I[D ](@25°C) max: 23.0A

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 90.0mΩ

V[DS] max: 750.0V

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IMZA65R083M1H

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数据:

简介: CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 83.0mΩ

V[DS] max: 650.0V

Technology: CoolSiC™ G1

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IMBG65R083M1H

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数据:

简介: SiC MOSFET in compact SMD package

Operating Temperature max: 175.0°C

P[tot] max: 126.0W

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 83.0mΩ

V[DS] max: 650.0V

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AIMW120R080M1

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数据:

简介: The CoolSiC™ MOSFETs for Automotive family has been developed for current & future On-Board Charger & DC-DC applications in hybrid & electric vehicles

I[D ](@25°C) max: 33.0A

Operating Temperature max: 175.0°C

Polarity: N

R[DS (on)](@ Tj = 25°C): 80.0mΩ

V[DS] max: 1200.0V

Qualification: Automotive

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IMBG120R116M2H

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数据:

简介: CoolSiC™ MOSFET discrete 1200 V G2 in TO-263-7 package

C[iss]: 500.0pF

C[oss]: 19.0pF

Operating Temperature max: 175.0°C

I[D ](@ T[C]=25°C): 21.2A

Mounting: SMD

P[tot](@ T[A]=25°C) max: 123.0W

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IMYH200R075M1H

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数据:

简介: CoolSiC™ 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package

C[iss]: 1600.0pF

C[oss]: 53.0pF

I[D ](@25°C) max: 34.0A

Mounting: THT

P[tot](@ T[A]=25°C) max: 267.0W

Package: PG-TO247-4-PLUS-NT14

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IMT65R107M1H

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数据:

简介: CoolSiC™ MOSFET discrete 650 V in TOLL package

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 107.0mΩ

V[DS] max: 650.0V

Technology: CoolSiC™ G1

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IMW65R072M1H

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数据:

简介: CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 3–pin package

P[tot] max: 96.0W

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 72.0mΩ

V[DS] max: 650.0V

Technology: CoolSiC™ G1

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IMBG65R072M1H

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数据:

简介: SiC MOSFET in compact SMD package

I[D ](@25°C) max: 33.0A

Operating Temperature max: 175.0°C

P[tot] max: 140.0W

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 72.0mΩ

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IMT65R072M1H

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数据:

简介: CoolSiC™ MOSFET discrete 650 V in TOLL package

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 72.0mΩ

V[DS] max: 650.0V

Technology: CoolSiC™ G1

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