INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战: 高能效、 移动性和 安全性,为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称,并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

IMZA65R072M1H

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数据:

简介: CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package

P[tot] max:  96.0W
Polarity:  N
Qualification:  Industrial
R[DS (on)](@ Tj = 25°C):  72.0mΩ
V[DS] max:  650.0V
Technology:  CoolSiC™ G1
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IMW120R060M1H

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数据:

简介: CoolSiC™ 1200V SiC Trench MOSFET in TO247-3 package

Qualification:  Industrial
R[DS (on)](@18V):  60.0mΩ
C[iss]:  1060.0pF
C[oss]:  58.0pF
I[D ](@25°C) max:  36.0A
Mounting:  THT
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AIMDQ75R060M1H

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数据:

简介: The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability.

I[D ](@25°C) max:  34.0A
Operating Temperature max:  175.0°C
Polarity:  N
Qualification:  Automotive
R[DS (on)](@ Tj = 25°C):  60.0mΩ
Technology:  CoolSiC™ G1
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询 价

IMBG120R060M1H

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数据:

简介: CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package

C[iss]:  1145.0pF
C[oss]:  53.0pF
I[D ](@25°C) max:  36.0A
Mounting:  SMD
Operating Temperature max:  175.0°C
P[tot](@ T[A]=25°C) max:  181.0W
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IMZ120R060M1H

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数据:

简介: CoolSiC™ 1200V SiC Trench MOSFET in TO247-4 package

Qualification:  Industrial
R[DS (on)](@18V):  60.0mΩ
C[iss]:  1060.0pF
C[oss]:  58.0pF
I[D ](@25°C) max:  36.0A
Mounting:  THT
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AIMW120R060M1H

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数据:

简介: The CoolSiC™ MOSFETs for Automotive family has been developed for current & future On-Board Charger & DC-DC applications in hybrid & electric vehicles

I[D ](@25°C) max:  36.0A
Operating Temperature max:  175.0°C
Polarity:  N
R[DS (on)](@ Tj = 25°C):  60.0mΩ
V[DS] max:  1200.0V
Qualification:  Automotive
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IMDQ75R090M1H

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数据:

简介: The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability.

I[D ](@25°C) max:  24.0A
Operating Temperature max:  175.0°C
Polarity:  N
Qualification:  Industrial
R[DS (on)](@ Tj = 25°C):  90.0mΩ
Technology:  CoolSiC™ G1
库存数量:
询 价

IMZA75R060M1H

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数据:

简介: The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability

I[D ](@25°C) max:  32.0A
Operating Temperature max:  175.0°C
Polarity:  N
Qualification:  Industrial
R[DS (on)](@ Tj = 25°C):  60.0mΩ
V[DS] max:  750.0V
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AIMBG120R060M1

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数据:

简介: Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in D2PAK-7L, 60mΩ

I[D ](@25°C) max:  38.0A
Operating Temperature max:  175.0°C
V[DS] max:  1200.0V
VGSS, off:  0
VGSS, on:  20
Qualification:  Automotive
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AIMZA75R060M1H

分类:
数据:

简介: The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability

I[D ](@25°C) max:  32.0A
Operating Temperature max:  175.0°C
Polarity:  N
Qualification:  Automotive
R[DS (on)](@ Tj = 25°C):  60.0mΩ
V[DS] max:  750.0V
库存数量:
询 价