INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战：高能效、移动性和安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

IMT65R057M1H

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数据:

简介: CoolSiC™ MOSFET discrete 650 V in TOLL package

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 57.0mΩ

V[DS] max: 650.0V

Technology: CoolSiC™ G1

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IMDQ75R060M1H

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数据:

简介: The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best system performance and reliability.

I[D ](@25°C) max: 34.0A

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 60.0mΩ

Technology: CoolSiC™ G1

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IMBG120R078M2H

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数据:

简介: CoolSiC™ MOSFET discrete 1200 V G2 in TO-263-7 package

C[iss]: 700.0pF

C[oss]: 28.0pF

Operating Temperature max: 175.0°C

I[D ](@ T[C]=25°C): 29.0A

Mounting: SMD

P[tot](@ T[A]=25°C) max: 158.0W

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FF55MR12W1M1H_B11

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数据:

简介: CoolSiC™ MOSFET halfbridge module 1200 V

Configuration: Half-bridge

Applications: EV Charger

Applications: Servo motor

Applications: Industrial drives

Housing: Easy 1B

Qualification: Industrial

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FS55MR12W1M1H_B11

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数据:

简介: Sixpack 1200 V CoolSiC™ MOSFET Easy Module

Applications: UPS,Servo Drives,Solar,EV Charging

Configuration: Sixpack

Dimensions(width): 33.8mm

Dimensions(length): 62.8mm

Features: PressFIT

Housing: Easy 1B

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AIMZHN120R080M1T

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数据:

简介: Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L, 80mΩ

I[D ](@25°C) max: 31.0A

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Automotive

R[DS (on)](@ Tj = 25°C): 80.0mΩ

V[DS] max: 1200.0V

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FF55MR12W1M1H_B70

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数据:

简介: CoolSiC™ MOSFET halfbridge module 1200 V

Configuration: Half-bridge

Applications: Industrial drives

Applications: EV Charger

Applications: Servo motor

Housing: Easy 1B

Qualification: Industrial

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AIMZH120R080M1T

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数据:

简介: Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L (thin leads), 80mΩ

V[DS] max: 1200.0V

R[DS (on)](@ Tj = 25°C): 80.0mΩ

I[D ](@25°C) max: 31.0A

Qualification: Automotive

Polarity: N

Operating Temperature max: 175.0°C

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IMZ120R090M1H

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数据:

简介: CoolSiC™ 1200V SiC Trench MOSFET in TO247-4 package

Qualification: Industrial

R[DS (on)](@18V): 90.0mΩ

C[iss]: 707.0pF

C[oss]: 39.0pF

I[D ](@25°C) max: 26.0A

Mounting: THT

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IMBG120R053M2H

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数据:

简介: CoolSiC™ MOSFET discrete 1200 V G2 in TO-263-7 package

C[iss]: 1010.0pF

C[oss]: 41.0pF

Operating Temperature max: 175.0°C

I[D ](@ T[C]=25°C): 41.0A

Mounting: SMD

P[tot](@ T[A]=25°C) max: 205.0W

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