INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战：高能效、移动性和安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

IMYH200R050M1H

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数据:

简介: CoolSiC™ 2000 V SiC Trench MOSFET in TO-247PLUS-4-HCC package

C[iss]: 2425.0pF

C[oss]: 81.0pF

I[D ](@25°C) max: 48.0A

Mounting: THT

P[tot](@ T[A]=25°C) max: 348.0W

Package: PG-TO247-4-PLUS-NT14

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AIMW120R045M1

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数据:

简介: CoolSiC™ MOSFETs for Automotive has been developed for current and future On-Board Charger and DC-DC applications in hybrid and electric vehicles.

R[DS (on)](@ Tj = 25°C): 45.0mΩ

V[DS] max: 1200.0V

I[D ](@25°C) max: 52.0A

Polarity: N

Operating Temperature max: 175.0°C

Qualification: Automotive

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IMW65R050M2H

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数据:

简介: CoolSiC™ MOSFET 650 V G2 in TO-247-3 package

Qualification: Industrial

R[thJC] max: 0.99K/W

I[D ](@25°C) max: 38.0A

Operating Temperature max: 175.0°C

Polarity: N

R[DS (on)](@ Tj = 25°C): 50.0mΩ

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IMZA65R050M2H

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数据:

简介: CoolSiC™ MOSFET 650 V G2 in TO-247-4 package

Qualification: Industrial

R[thJC] max: 0.99K/W

I[D ](@25°C) max: 38.0A

Operating Temperature max: 175.0°C

Polarity: N

R[DS (on)](@ Tj = 25°C): 50.0mΩ

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AIMZHN120R060M1T

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数据:

简介: Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L, 60mΩ

I[D ](@25°C) max: 38.0A

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Automotive

R[DS (on)](@ Tj = 25°C): 60.0mΩ

V[DS] max: 1200.0V

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IMT65R048M1H

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数据:

简介: CoolSiC™ MOSFET discrete 650 V in TOLL package

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 48.0mΩ

V[DS] max: 650.0V

Technology: CoolSiC™ G1

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IMBG120R045M1H

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数据:

简介: CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package

C[iss]: 1527.0pF

C[oss]: 70.0pF

I[D ](@25°C) max: 47.0A

Mounting: SMD

Operating Temperature max: 175.0°C

P[tot](@ T[A]=25°C) max: 227.0W

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IMZA65R040M2H

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数据:

简介: CoolSiC™ MOSFET 650 V G2 in TO-247-4 package

Qualification: Industrial

R[thJC] max: 0.87K/W

I[D ](@25°C) max: 46.0A

Operating Temperature max: 175.0°C

Polarity: N

R[DS (on)](@ Tj = 25°C): 40.0mΩ

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AIMZHN120R040M1T

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数据:

简介: Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L, 40mΩ

I[D ](@25°C) max: 55.0A

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Automotive

R[DS (on)](@ Tj = 25°C): 40.0mΩ

V[DS] max: 1200.0V

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IMZA120R040M1H

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数据:

简介: CoolSiC™ 1200 V, 40 mΩ SiC Trench MOSFET in TO247-4 package

C[iss]: 1620.0pF

C[oss]: 75.0pF

I[D ](@25°C) max: 55.0A

Mounting: THT

Operating Temperature max: 175.0°C

P[tot](@ T[A]=25°C) max: 227.0W

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