INFINEON
Infineon 英飞凌专注于迎接现代社会的三大科技挑战： 高能效、 移动性和 安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。
Configuration: IGCT/IGBT - Freewheeling Diodes
Housing: Disc dia 120mm height 26mm / Ceramic
I[(FSM)] max: 48000.0A
I[FAVM]/T[C] [A/°C](@180° el sin): 2900/55
V[F]/I[F] [V/kA](@Tvj max): 2.5/2.5
r[T] [mΩ](@T[vj max]) max: 0.447
| 库存数量: |
V[RRM] max: 4500.0V
I[(FSM)] max: 28000.0A
Configuration: GTO - Freewheeling Diodes
Housing: Disc dia 100mm height 26mm / Ceramic
V[RRM] [V]: 4500.0
I[FAVM]/T[C] [A/°C](@180° el sin): 1460/85
| 库存数量: |
V[RRM] max: 4500.0V
I[(FSM)] max: 28000.0A
Configuration: IGCT/IGBT - Freewheeling Diodes
Housing: Disc dia 120mm height 26mm / Ceramic
V[RRM] [V]: 4500.0
I[FAVM]/T[C] [A/°C](@180° el sin): 1310/85
| 库存数量: |
V[RRM] max: 4500.0V
I[(FSM)] max: 28000.0A
Configuration: GTO - Freewheeling Diodes
Housing: Disc dia 100mm height 26mm / Ceramic
V[RRM] [V]: 4500.0
I[FAVM]/T[C] [A/°C](@180° el sin): 1380/85
| 库存数量: |
DZ950N44K
分类:数据:
简介: 70 mm Single Rectifier Diode Module with 4400 V in pressure contact technology
Configuration: Single Rectifier Diode
V[DRM] / V[RRM] [V]: 4400.0
I[FAVM]/T[C] / I[TAVM]/T[C] [A/°C](@180° el sin): 950/100
I[FSM] / I[TSM] [A](@10ms, Tvj max): 29000.0
∫I2dt [A²s · 103](@10ms, Tvj max): 4205.0
V[T0] [V](@T[vj max]): 0.85
| 库存数量: |
Configuration: Rectifier Diode
V[DRM] / V[RRM] [V]: 4000.0
I[FAVM]/T[C] / I[TAVM]/T[C] [A/°C](@180° el sin): 435/100
I[FSM] / I[TSM] [A](@10ms, Tvj max): 12000.0
∫I2dt [A²s · 103](@10ms, Tvj max): 720.0
V[T0] [V](@T[vj max]): 0.84
| 库存数量: |
Configuration: Single SCR Phase Control
V[DRM] / V[RRM] [V]: 3600.0
I[FAVM]/T[C] / I[TAVM]/T[C] [A/°C](@180° el sin): 240/85
I[FSM] / I[TSM] [A](@10ms, Tvj max): 5500.0
∫I2dt [A²s · 103](@10ms, Tvj max): 151.0
V[T0] [V](@T[vj max]): 1.17
| 库存数量: |
V[RRM] max: 4500.0V
V[F]/I[F] [V/kA](@Tvj max): 4.3/2.5
Configuration: IGCT/IGBT - Freewheeling Diodes
Housing: Disc dia 120mm height 26mm / Ceramic
I[(FSM)] max: 28000.0A
I[FAVM]/T[C] [A/°C](@180° el sin): 1680/55
| 库存数量: |
DZ435N40K
分类:数据:
简介: 50 mm Single Rectifier Diode Module with 4000 V in pressure contact technology
Configuration: Single Rectifier Diode
V[DRM] / V[RRM] [V]: 4000.0
I[FAVM]/T[C] / I[TAVM]/T[C] [A/°C](@180° el sin): 435/100
I[FSM] / I[TSM] [A](@10ms, Tvj max): 12000.0
∫I2dt [A²s · 103](@10ms, Tvj max): 720.0
V[T0] [V](@T[vj max]): 0.84
| 库存数量: |
DZ435N36K
分类:数据:
简介: 50 mm Single Rectifier Diode Module with 3600 V in pressure contact technology
Configuration: Single Rectifier Diode
V[DRM] / V[RRM] [V]: 3600.0
I[FAVM]/T[C] / I[TAVM]/T[C] [A/°C](@180° el sin): 435/100
I[FSM] / I[TSM] [A](@10ms, Tvj max): 12000.0
∫I2dt [A²s · 103](@10ms, Tvj max): 720.0
V[T0] [V](@T[vj max]): 0.84
| 库存数量: |