INFINEON
Infineon 英飞凌专注于迎接现代社会的三大科技挑战： 高能效、 移动性和 安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。
V[RRM] max: 6800.0V
I[(FSM)] max: 53000.0A
I[FAVM]/T[c]: 2900/100 (180 ° el sin)
Configuration: Rectifier Diodes
Housing: Disc dia 120mm height 35mm / Ceramic
V[RRM] [V]: 6800.0
| 库存数量: |
Configuration: IGCT/IGBT - Freewheeling Diodes
Housing: Disc dia 172 mm height 26mm / Ceramic
I[(FSM)] max: 80000.0A
I[FAVM]/T[C] [A/°C](@180° el sin): 4780/55
I[RM] [A](@di/dt = 1000 A/µs, IFM = 2.5 kA, Tvj max) max: 5500.0
R[thJC] [K/kW](@DC) max: 3.3
| 库存数量: |
V[RRM] max: 2800.0V
I[(FSM)] max: 60000.0A
I[FAVM]/T[c]: 4810/100 (180 ° el sin)
Configuration: Rectifier Diodes
Housing: Disc dia 111mm height 26mm / Ceramic
V[RRM] [V]: 2800.0
| 库存数量: |
V[RRM] max: 4500.0V
I[(FSM)] max: 40000.0A
Configuration: IGCT/IGBT - Freewheeling Diodes
Housing: Disc dia 120mm height 26mm / Ceramic
V[RRM] [V]: 4500.0
I[FAVM]/T[C] [A/°C](@180° el sin): 1830/85
| 库存数量: |
V[RRM] max: 2200.0V
I[(FSM)] max: 60000.0A
I[FAVM]/T[c]: 4810/100 (180 ° el sin)
Configuration: Rectifier Diodes
Housing: Disc dia 111mm height 26mm / Ceramic
V[RRM] [V]: 2200.0
| 库存数量: |
V[RRM] max: 600.0V
I[(FSM)] max: 70000.0A
I[FAVM]/T[c]: 5800/58 (180 ° el sin)
Configuration: Rectifier Diodes
Housing: Disc dia 75mm height 26mm / Ceramic
V[RRM] [V]: 600.0
| 库存数量: |
V[RRM] max: 4500.0V
I[(FSM)] max: 28000.0A
Configuration: GTO - Freewheeling Diodes
Housing: Disc dia 100mm height 26mm / Ceramic
V[RRM] [V]: 4500.0
I[FAVM]/T[C] [A/°C](@180° el sin): 1380/85
| 库存数量: |
V[RRM] max: 600.0V
I[(FSM)] max: 95000.0A
I[FAVM]/T[c]: 8320/56 (180 ° el sin)
Configuration: Rectifier Diodes
Housing: Disc dia 100mm height 26mm / Ceramic
V[RRM] [V]: 600.0
| 库存数量: |
V[RRM] max: 2200.0V
I[(FSM)] max: 73500.0A
I[FAVM]/T[c]: 4830/100 (180 ° el sin)
Configuration: Rectifier Diodes
Housing: Disc dia 120mm height 35mm / Ceramic
V[RRM] [V]: 2200.0
| 库存数量: |
