INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战：高能效、移动性和安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

S26HS512TGABHB000

分类: 微电路 / 半导体集成电路 / 数字集成电路 / 存储器 / 快闪存储器(Flash)
数据:

Family: HS-T Interface Frequency (SDR/DDR)(MHz): - / 200 Operating Temperature max: 105.0°C Operating Voltage: 1.8V Peak Reflow Temp: 260.0°C Interface Bandwidth: 400.0MByte/s Interfaces: HYPERBUS Qualification: Automotive Lead Ball Finish: Sn/Ag/Cu Classification: ISO 26262-compliant Density: 512.0MBit Currently planned availability until at least: 2035

S28HS512TGABHM013

分类: 微电路 / 半导体集成电路 / 数字集成电路 / 存储器 / 快闪存储器(Flash)
数据:

Interface Frequency (SDR/DDR)(MHz): 200 / 200 Operating Temperature max: 125.0°C Operating Voltage: 1.8V Peak Reflow Temp: 260.0°C Family: HS-T Interface Bandwidth: 400.0MByte/s Qualification: Automotive Lead Ball Finish: Sn/Ag/Cu Interfaces: Octal Classification: ISO 26262-compliant Density: 512.0MBit Currently planned availability until at least: 2035

ESD1P0RFW

分类: 半导体分立器件和附件 / 二极管 / 普通二极管 / 瞬态抑制二极管
数据:

I[R] max: 100.0nA V[ESD] max: 20.0kV C[L ]: 1.0pF V[ESD](IEC61000-4-2 contact) min: 25.0kV I[PP]: 10A I[EFT ]: 40A Protected Lines: 1 V[WM] max: 70.0V

S28HS512TGABHV013

分类: 微电路 / 半导体集成电路 / 数字集成电路 / 存储器 / 快闪存储器(Flash)
数据:

Interface Frequency (SDR/DDR)(MHz): 200 / 200 Operating Temperature max: 105.0°C Operating Voltage: 1.8V Peak Reflow Temp: 260.0°C Family: HS-T Interface Bandwidth: 400.0MByte/s Qualification: Industrial Lead Ball Finish: Sn/Ag/Cu Interfaces: Octal Density: 512.0MBit Currently planned availability until at least: 2035

ESD5V5U5ULC

分类: 半导体分立器件和附件 / 二极管 / 普通二极管 / 瞬态抑制二极管
数据:

I[R]: 1.0µA V[ESD] max: 25.0kV R[dyn](reverse): 0.2Ω C[L ]: 0.45pF R[dyn](forward): 0.3Ω V[WM]: 5.5V V[cl typ. reverse](@16A): 8.9V I[PP]: 6A I[EFT ]: 50A V[cl typ. reverse](TLP 30A): 11.5 Protected Lines: 5 V[cl typ. reverse](TLP 16A): 8.9V

S26HS512TGABHM003

分类: 微电路 / 半导体集成电路 / 数字集成电路 / 存储器 / 快闪存储器(Flash)
数据:

Interface Frequency (SDR/DDR)(MHz): - / 200 Operating Temperature max: 125.0°C Operating Voltage: 1.8V Peak Reflow Temp: 260.0°C Family: HS-T Interface Bandwidth: 400.0MByte/s Interfaces: HYPERBUS Qualification: Automotive Lead Ball Finish: Sn/Ag/Cu Classification: ISO 26262-compliant Density: 512.0MBit Currently planned availability until at least: 2035

ESD5V3U2U-03F

分类: 半导体分立器件和附件 / 二极管 / 普通二极管 / 瞬态抑制二极管
数据:

I[R]: 1.0nA I[R] max: 50.0µA V[ESD] max: 20.0kV R[dyn](reverse): 0.6Ω C[L ]: 0.4pF R[dyn](forward): 0.5Ω V[ESD](IEC61000-4-2 contact) min: 20.0kV V[cl typ. reverse](@16A): 19.0V I[PP]: 3A I[EFT ]: 40A V[cl typ. reverse](TLP 30A): 28V Protected Lines: 2 V[cl typ. reverse](TLP 16A): 19V V[WM]: 5.3V

S28HL256TFPBHB013

分类: 微电路 / 半导体集成电路 / 数字集成电路 / 存储器 / 快闪存储器(Flash)
数据:

Family: HL-T Interface Frequency (SDR/DDR)(MHz): 166 / 166 Interface Bandwidth: 333.0MByte/s Interfaces: Octal Qualification: Automotive Classification: ISO 26262-compliant Lead Ball Finish: Sn/Ag/Cu Peak Reflow Temp: 260.0°C Operating Temperature max: 105.0°C Operating Voltage: 3.0V Density: 256.0MBit Currently planned availability until at least: 2035

S28HS256TGZBHM013

分类: 微电路 / 半导体集成电路 / 数字集成电路 / 存储器 / 快闪存储器(Flash)
数据:

Family: HS-T Interface Frequency (SDR/DDR)(MHz): 166 / 200 Interface Bandwidth: 400.0MByte/s Interfaces: Octal Qualification: Automotive Classification: ISO 26262-compliant Lead Ball Finish: Sn/Ag/Cu Peak Reflow Temp: 260.0°C Operating Temperature max: 125.0°C Operating Voltage: 1.8V Density: 256.0MBit Currently planned availability until at least: 2035

S26HS512TGABHB003

分类: 微电路 / 半导体集成电路 / 数字集成电路 / 存储器 / 快闪存储器(Flash)
数据:

Family: HS-T Operating Temperature max: 105.0°C Operating Voltage: 1.8V Peak Reflow Temp: 260.0°C Interface Frequency (SDR/DDR)(MHz): - / 200 Interface Bandwidth: 400.0MByte/s Interfaces: HYPERBUS Qualification: Automotive Lead Ball Finish: Sn/Ag/Cu Classification: ISO 26262-compliant Density: 512.0MBit Currently planned availability until at least: 2035