INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战: 高能效、 移动性和 安全性,为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称,并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

FS520R12A8P1LB

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简介: This HybridPACK™ Drive G2 module is a very compact six-pack power module (1200V/520A) with enhanced package optimized for hybrid and electric vehicles.

Technology:  IGBT
Configuration:  Sixpack
I[C(nom)] / I[F(nom)]:  520.0A
V[CES](Tvj=25°C typ):  1200.0V
V[CE(sat)](Tvj=25°C typ):  1.48V
Features:  PinFin Base Plate
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1EDL8011

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简介: 125 V high-side gate driver with single output in DSO-8 package for battery-powered applications

Channels:  1.0
Configuration:  High-side
Input Vcc max:  125.0V
Output Current(Sink):  1.0A
Package:  PG-DSO-8-92
Qualification:  Industrial
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IQD005N04NM6SC

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简介: OptiMOS™ power MOSFETs 40 V normal level in PQFN 5x6 Source-Down DSC package with very low RDS(on).

I[D ](@25°C) max:  597.0A
Operating Temperature max:  175.0°C
Package:  PQFN 5x6 Source-Down
Polarity:  N
Q[G](typ @10V):  130.0nC
R[DS (on)](@10V) max:  0.49mΩ
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IQDH29NE2LM5CGSC

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简介: OptiMOS™ power MOSFETs 25 V in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on)

I[D ](@25°C) max:  789.0A
Operating Temperature max:  150.0°C
Package:  PQFN 5x6 Source-Down
Polarity:  N
Q[G](typ @4.5V):  88.0nC
Q[G](typ @10V):  191.0nC
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IQDH35N03LM5CGSC

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简介: OptiMOS™ power MOSFETs 30 V in PQFN 5x6 Source-Down Center-Gate DSC package with industry-leading RDS(on)

I[D ](@25°C) max:  700.0A
Operating Temperature max:  150.0°C
Package:  PQFN 5x6 Source-Down
Polarity:  N
Q[G](typ @4.5V):  91.0nC
Q[G](typ @10V):  197.0nC
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IQDH29NE2LM5SC

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数据:

简介: OptiMOS™ power MOSFETs 25 V in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on)

I[D ](@25°C) max:  789.0A
Operating Temperature max:  150.0°C
Package:  PQFN 5x6 Source-Down
Polarity:  N
Q[G](typ @4.5V):  88.0nC
Q[G](typ @10V):  191.0nC
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IQDH35N03LM5SC

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数据:

简介: OptiMOS™ power MOSFETs 30 V in PQFN 5x6 Source-Down DSC package with industry-leading RDS(on).

I[D ](@25°C) max:  700.0A
Operating Temperature max:  150.0°C
Package:  PQFN 5x6 Source-Down
Polarity:  N
Q[G](typ @4.5V):  91.0nC
Q[G](typ @10V):  197.0nC
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IQDH45N04LM6CGSC

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数据:

简介: OptiMOS™ power MOSFETs 40 V in PQFN 5x6 Source-Down Center-Gate DSC package with very low RDS(on)

I[D ](@25°C) max:  611.0A
Operating Temperature max:  175.0°C
Package:  PQFN 5x6 Source-Down
Polarity:  N
Q[G](typ @4.5V):  62.0nC
Q[G](typ @10V):  129.0nC
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IQD005N04NM6CGSC

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数据:

简介: OptiMOS™ power MOSFETs 40 V normal level in PQFN 5x6 Source-Down Center-Gate DSC package with very low RDS(on)

I[D ](@25°C) max:  597.0A
Operating Temperature max:  175.0°C
Package:  PQFN 5x6 Source-Down
Polarity:  N
Q[G](typ @10V):  130.0nC
R[DS (on)](@10V) max:  0.49mΩ
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IQDH45N04LM6SC

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数据:

简介: OptiMOS™ power MOSFETs 40 V in PQFN 5x6 Source-Down DSC package with very low RDS(on).

I[D ](@25°C) max:  611.0A
Operating Temperature max:  175.0°C
Package:  PQFN 5x6 Source-Down
Polarity:  N
Q[G](typ @4.5V):  62.0nC
Q[G](typ @10V):  129.0nC
库存数量:
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