INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战: 高能效、 移动性和 安全性,为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称,并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

1ED3143MC12H

分类:
数据:

简介: 5.7 kV single-channel gate driver IC with reinforced isolation, 6.5 A output current, UVLO referenced to GND2, 11 V UVLO

Channels:  1.0
Configuration:  High-side
Input Vcc max:  15.0V
Isolation Type:  Galvanic isolation - Reinforced
Output Current(Sink):  6.5A
Output Current(Source):  6.0A
库存数量:
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1ED3142MC12H

分类:
数据:

简介: 5.7 kV single-channel gate driver IC with reinforced isolation, 6.5 A output current, separate outputs, 11 V UVLO

Channels:  1.0
Configuration:  High-side
Input Vcc max:  15.0V
Isolation Type:  Galvanic isolation - Reinforced
Output Current(Sink):  6.5A
Output Current(Source):  6.0A
库存数量:
询 价

1ED3145MC12H

分类:
数据:

简介: 5.7 kV single-channel gate driver IC with reinforced isolation, 6.5 A output current, adjustable UVLO

Channels:  1.0
Configuration:  High-side
Input Vcc max:  15.0V
Isolation Type:  Galvanic isolation - Reinforced
Output Current(Sink):  6.5A
Output Current(Source):  6.0A
库存数量:
询 价

1ED3144MC12H

分类:
数据:

简介: 5.7 kV single-channel gate driver IC with reinforced isolation, 6.5 A output current, UVLO referenced to GND2, 12.5 V UVLO

Channels:  1.0
Configuration:  High-side
Input Vcc max:  15.0V
Isolation Type:  Galvanic isolation - Reinforced
Output Current(Sink):  6.5A
Output Current(Source):  6.0A
库存数量:
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IRF2804S

分类:
数据:

简介: 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Mounting:  SMD
Package:  D2PAK (TO-263)
P[tot] max:  330.0W
Q[gd]:  66.0nC
T[j] max:  175.0°C
V[DS] max:  40.0V
库存数量:
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IRF2804

分类:
数据:

简介: 40V Single N-Channel Power MOSFET in a TO-220 package

Package:  TO-220
Polarity:  N
P[tot] max:  330.0W
Q[gd]:  66.0nC
R[thJC] max:  0.45K/W
V[DS] max:  40.0V
库存数量:
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IGI60L1414B1M

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数据:

简介: 140 mΩ / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode

Generation:  G5
V[DS] max:  600.0V
Mounting:  SMT
R[DS (on)](typ):  140.0mΩ
Q[G]:  1.8nC
I[D ](@25°C) max:  6.0A
库存数量:
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IGI60L1111B1M

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数据:

简介: 110 mΩ / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode

Generation:  G5
V[DS] max:  600.0V
Mounting:  SMT
R[DS (on)](typ):  110.0mΩ
Q[G]:  2.4nC
I[D ](@25°C) max:  7.4A
库存数量:
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IGI60L5050B1M

分类:
数据:

简介: 500 mΩ / 600 V GaN transistor in half-bridge configuration with integrated level-shift gate driver and bootstrap diode

Generation:  G5
V[DS] max:  600.0V
Mounting:  SMT
R[DS (on)](typ):  500.0mΩ
Q[G]:  0.52nC
I[D ](@25°C) max:  3.0A
库存数量:
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IDWD80G200C5

分类:
数据:

简介: CoolSiC™ Schottky diode 2000 V in TO-247-2 package

I[(FSM)] max:  463.0A
I[F] max:  80.0A
I[R]:  40.0µA
P[tot] max:  656.0W
Q[C]:  716.0nC
Qualification:  Industrial
库存数量:
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