INFINEON
Infineon 英飞凌专注于迎接现代社会的三大科技挑战： 高能效、 移动性和 安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。
I[TSM]: 10500.0A
I[TAVM]: 540 (180 ° el sin)
V[DRM]/ V[RRM (V)]: 6500.0V
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 76mm height 26mm / Ceramic
V[DRM] / V[RRM] [V]: 6500.0
I[TAVM]/T[C] [A/°C](@180° el sin): 540/85
I[TSM] [A](@10ms, Tvj max): 10500.0
∫I2dt [A²s · 103](@10ms, Tvj max): 442.0
V[T]/I[T] [V/kA](@Tvj max): 2.75/1.0
V[T0] [V](@T[vj max]) max: 1.35
r[T] [mΩ](@T[vj max]) max: 1.4
t[q] [µs]: 1000.0
R[thJC] [K/kW](@180° el sin) max: 21.0
T[vj] [°C] max: 125.0
Clamping force [kn] max: 23.0
V[DRM]/ V[RRM (V)]: 1400.0V
I[TSM]: 6900.0A
I[TAVM]: 595 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 48mm height 14mm / Ceramic
V[DRM] / V[RRM] [V]: 1400.0
I[TAVM]/T[C] [A/°C](@180° el sin): 559/85
I[TSM] [A](@10ms, Tvj max): 6900.0
∫I2dt [A²s · 103](@10ms, Tvj max): 238.0
V[T]/I[T] [V/kA](@Tvj max): 1.92/1.6
V[T0] [V](@T[vj max]) max: 0.8
r[T] [mΩ](@T[vj max]) max: 0.6
t[q] [µs]: 250.0
R[thJC] [K/kW](@180° el sin) max: 44.0
T[vj] [°C] max: 125.0
Clamping force [kn] max: 10.0
V[DRM]/ V[RRM (V)]: 1600.0V
I[TSM]: 8000.0A
I[TAVM]: 644 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 48mm height 14mm / Ceramic
V[DRM] / V[RRM] [V]: 1600.0
I[TAVM]/T[C] [A/°C](@180° el sin): 644/85
I[TSM] [A](@10ms, Tvj max): 8000.0
∫I2dt [A²s · 103](@10ms, Tvj max): 320.0
V[T]/I[T] [V/kA](@Tvj max): 2.15/2.4
V[T0] [V](@T[vj max]) max: 0.8
r[T] [mΩ](@T[vj max]) max: 0.5
t[q] [µs]: 250.0
R[thJC] [K/kW](@180° el sin) max: 39.0
T[vj] [°C] max: 125.0
Clamping force [kn] max: 12.0
V[DRM]/ V[RRM (V)]: 1400.0V
I[TSM]: 8000.0A
I[TAVM]: 644 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 48mm height 14mm / Ceramic
V[DRM] / V[RRM] [V]: 1400.0
I[TAVM]/T[C] [A/°C](@180° el sin): 644/85
I[TSM] [A](@10ms, Tvj max): 8000.0
∫I2dt [A²s · 103](@10ms, Tvj max): 320.0
V[T]/I[T] [V/kA](@Tvj max): 2.15/2.4
V[T0] [V](@T[vj max]) max: 0.8
r[T] [mΩ](@T[vj max]) max: 0.5
t[q] [µs]: 250.0
R[thJC] [K/kW](@180° el sin) max: 39.0
T[vj] [°C] max: 125.0
Clamping force [kn] max: 12.0
V[DRM]/ V[RRM (V)]: 1800.0V
I[TSM]: 6900.0A
I[TAVM]: 595 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 48mm height 14mm / Ceramic
V[DRM] / V[RRM] [V]: 1800.0
I[TAVM]/T[C] [A/°C](@180° el sin): 559/85
I[TSM] [A](@10ms, Tvj max): 6900.0
∫I2dt [A²s · 103](@10ms, Tvj max): 238.0
V[T]/I[T] [V/kA](@Tvj max): 1.92/1.6
V[T0] [V](@T[vj max]) max: 0.8
r[T] [mΩ](@T[vj max]) max: 0.6
t[q] [µs]: 250.0
R[thJC] [K/kW](@180° el sin) max: 44.0
T[vj] [°C] max: 125.0
Clamping force [kn] max: 10.0
V[DRM]/ V[RRM (V)]: 1600.0V
I[TSM]: 6900.0A
I[TAVM]: 595 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 48mm height 14mm / Ceramic
V[DRM] / V[RRM] [V]: 1600.0
I[TAVM]/T[C] [A/°C](@180° el sin): 559/85
I[TSM] [A](@10ms, Tvj max): 6900.0
∫I2dt [A²s · 103](@10ms, Tvj max): 238.0
V[T]/I[T] [V/kA](@Tvj max): 1.92/1.6
V[T0] [V](@T[vj max]) max: 0.8
r[T] [mΩ](@T[vj max]) max: 0.6
t[q] [µs]: 250.0
R[thJC] [K/kW](@180° el sin) max: 44.0
T[vj] [°C] max: 125.0
Clamping force [kn] max: 10.0
V[DRM]/ V[RRM (V)]: 2600.0V
I[TSM]: 11500.0A
I[TAVM]: 659 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 58mm height 26mm / Ceramic
V[DRM] / V[RRM] [V]: 2600.0
I[TAVM]/T[C] [A/°C](@180° el sin): 659/85
I[TSM] [A](@10ms, Tvj max): 11500.0
∫I2dt [A²s · 103](@10ms, Tvj max): 660.0
V[T]/I[T] [V/kA](@Tvj max): 2.53/2.85
V[T0] [V](@T[vj max]) max: 1.0
r[T] [mΩ](@T[vj max]) max: 0.5
t[q] [µs]: 300.0
R[thJC] [K/kW](@180° el sin) max: 33.0
T[vj] [°C] max: 125.0
Clamping force [kn] max: 21.0
V[DRM]/ V[RRM (V)]: 2400.0V
I[TSM]: 40000.0A
I[TAVM]: 2400 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 111mm height 26mm / Ceramic
V[DRM] / V[RRM] [V]: 2400.0
I[TAVM]/T[C] [A/°C](@180° el sin): 2400/85
I[TSM] [A](@10ms, Tvj max): 40000.0
∫I2dt [A²s · 103](@10ms, Tvj max): 8000.0
V[T]/I[T] [V/kA](@Tvj max): 2.65/8.8
V[T0] [V](@T[vj max]) max: 1.05
r[T] [mΩ](@T[vj max]) max: 0.154
t[q] [µs]: 400.0
R[thJC] [K/kW](@180° el sin) max: 8.5
T[vj] [°C] max: 125.0
Clamping force [kn] max: 95.0
V[DRM]/ V[RRM (V)]: 1600.0V
I[TSM]: 6400.0A
I[TAVM]: 424 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 48mm height 14mm / Ceramic
V[DRM] / V[RRM] [V]: 1600.0
I[TAVM]/T[C] [A/°C](@180° el sin): 424/85
I[TSM] [A](@10ms, Tvj max): 6400.0
∫I2dt [A²s · 103](@10ms, Tvj max): 205.0
V[T]/I[T] [V/kA](@Tvj max): 2.10/1.5
V[T0] [V](@T[vj max]) max: 0.9
r[T] [mΩ](@T[vj max]) max: 0.75
t[q] [µs]: 220.0
R[thJC] [K/kW](@180° el sin) max: 56.0
T[vj] [°C] max: 125.0
Clamping force [kn] max: 10.0
V[DRM]/ V[RRM (V)]: 1400.0V
I[TSM]: 4600.0A
I[TAVM]: 433 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 42mm height 14mm / Ceramic
V[DRM] / V[RRM] [V]: 1400.0
I[TAVM]/T[C] [A/°C](@180° el sin): 433/85
I[TSM] [A](@10ms, Tvj max): 4600.0
∫I2dt [A²s · 103](@10ms, Tvj max): 106.0
V[T]/I[T] [V/kA](@Tvj max): 2.07/1.2
V[T0] [V](@T[vj max]) max: 0.85
r[T] [mΩ](@T[vj max]) max: 0.9
t[q] [µs]: 250.0
R[thJC] [K/kW](@180° el sin) max: 51.0
T[vj] [°C] max: 125.0
Clamping force [kn] max: 8.0