INFINEON
Infineon 英飞凌专注于迎接现代社会的三大科技挑战： 高能效、 移动性和 安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。
V[DRM]/ V[RRM (V)]: 1600.0V
I[TSM]: 6350.0A
I[TAVM]: 470 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 42mm height 14mm / Ceramic
V[DRM] / V[RRM] [V]: 1600.0
I[TAVM]/T[C] [A/°C](@180° el sin): 470/85
I[TSM] [A](@10ms, Tvj max): 6350.0
∫I2dt [A²s · 103](@10ms, Tvj max): 202.0
V[T]/I[T] [V/kA](@Tvj max): 1.85/1.2
V[T0] [V](@T[vj max]) max: 0.8
r[T] [mΩ](@T[vj max]) max: 0.75
t[q] [µs]: 250.0
R[thJC] [K/kW](@180° el sin) max: 51.0
T[vj] [°C] max: 125.0
Clamping force [kn] max: 8.0
I[TAVM]: 280 (180 ° el sin)
I[TSM]: 5800.0A
V[DRM]/ V[RRM (V)]: 6500.0V
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 58mm height 27mm / Ceramic
V[DRM] / V[RRM] [V]: 6500.0
I[TAVM]/T[C] [A/°C](@180° el sin): 280/85
I[TSM] [A](@10ms, Tvj max): 5800.0
∫I2dt [A²s · 103](@10ms, Tvj max): 115.0
V[T]/I[T] [V/kA](@Tvj max): 2.75/0.5
V[T0] [V](@T[vj max]) max: 1.35
r[T] [mΩ](@T[vj max]) max: 2.8
t[q] [µs]: 1000.0
R[thJC] [K/kW](@180° el sin) max: 43.0
T[vj] [°C] max: 125.0
Clamping force [kn] max: 12.0
V[DRM]/ V[RRM (V)]: 1800.0V
I[TSM]: 4600.0A
I[TAVM]: 433 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 42mm height 14mm / Ceramic
V[DRM] / V[RRM] [V]: 1800.0
I[TAVM]/T[C] [A/°C](@180° el sin): 433/85
I[TSM] [A](@10ms, Tvj max): 4600.0
∫I2dt [A²s · 103](@10ms, Tvj max): 106.0
V[T]/I[T] [V/kA](@Tvj max): 2.07/1.2
V[T0] [V](@T[vj max]) max: 0.85
r[T] [mΩ](@T[vj max]) max: 0.9
t[q] [µs]: 250.0
R[thJC] [K/kW](@180° el sin) max: 51.0
T[vj] [°C] max: 125.0
Clamping force [kn] max: 8.0
V[DRM]/ V[RRM (V)]: 1600.0V
I[TSM]: 4250.0A
I[TAVM]: 381 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 42mm height 14mm / Ceramic
V[DRM] / V[RRM] [V]: 1600.0
I[TAVM]/T[C] [A/°C](@180° el sin): 381/85
I[TSM] [A](@10ms, Tvj max): 4250.0
∫I2dt [A²s · 103](@10ms, Tvj max): 91.0
V[T]/I[T] [V/kA](@Tvj max): 2.00/1.1
V[T0] [V](@T[vj max]) max: 0.85
r[T] [mΩ](@T[vj max]) max: 0.9
t[q] [µs]: 200.0
R[thJC] [K/kW](@180° el sin) max: 62.0
T[vj] [°C] max: 125.0
Clamping force [kn] max: 6.0
V[DRM]/ V[RRM (V)]: 2600.0V
I[TSM]: 11500.0A
I[TAVM]: 727 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 58mm height 14mm / Ceramic
V[DRM] / V[RRM] [V]: 2600.0
I[TAVM]/T[C] [A/°C](@180° el sin): 745/85
I[TSM] [A](@10ms, Tvj max): 11500.0
∫I2dt [A²s · 103](@10ms, Tvj max): 660.0
V[T]/I[T] [V/kA](@Tvj max): 2.53/2.85
V[T0] [V](@T[vj max]) max: 1.0
r[T] [mΩ](@T[vj max]) max: 0.5
t[q] [µs]: 300.0
R[thJC] [K/kW](@180° el sin) max: 28.0
T[vj] [°C] max: 125.0
Clamping force [kn] max: 21.0
V[DRM]/ V[RRM (V)]: 1400.0V
I[TSM]: 4250.0A
I[TAVM]: 381 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 42mm height 14mm / Ceramic
V[DRM] / V[RRM] [V]: 1400.0
I[TAVM]/T[C] [A/°C](@180° el sin): 381/85
I[TSM] [A](@10ms, Tvj max): 4250.0
∫I2dt [A²s · 103](@10ms, Tvj max): 91.0
V[T]/I[T] [V/kA](@Tvj max): 2.00/1.1
V[T0] [V](@T[vj max]) max: 0.85
r[T] [mΩ](@T[vj max]) max: 0.9
t[q] [µs]: 200.0
R[thJC] [K/kW](@180° el sin) max: 62.0
T[vj] [°C] max: 125.0
Clamping force [kn] max: 6.0
Clamping force [kn] max: 56.0
Configuration: Electrical Triggered Phase Control Thyristor
I[TAVM]: 1410 (180 ° el sin)
I[TAVM]/T[C] [A/°C](@180° el sin): 1410/85
R[thJC] [K/kW](@180° el sin) max: 18.5
T[vj] [°C] max: 125.0
V[DRM] / V[RRM] [V]: 1600.0
V[DRM]/ V[RRM (V)]: 1600.0V
V[T0] [V](@T[vj max]) max: 0.8
V[T]/I[T] [V/kA](@Tvj max): 1.43/3.0
r[T] [mΩ](@T[vj max]) max: 0.21
t[q] [µs]: 230.0
∫I2dt [A²s · 103]: 4351.0
Housing: Disc dia 75mm height 26mm / Ceramic
I[TSM] [A](@10ms, Tvj max): 29500.0
Clamping force [kn] max: 4.5
Diameter [mm]: 42.0
Height [mm]: 14.0
Creeping distance [mm] min: 11.0
Suitable for: Disc type devices
Housing: T42/14
Features: Housing diameter: 42 mm
Features: Height: 14 mm
Features: Easy mounting for single sided cooling
Features: Clamping force: 4.5 kN
Features: Min. creeping distance: 11 mm
Clamping force [kn] max: 80.0
Configuration: Rectifier Diodes / Welding Diodes
Housing: Disc dia 65mm height 5,0 mm
I[(FSM)] max: 95000.0A
I[FAVM]/T[C] [A/°C](@180° el sin): 12810/100
I[FAVM]/T[c]: 12810/100 (180 ° el sin)
I[FSM] [A](@10ms, Tvj max): 95000.0
R[thJC] [K/kW](@180° el sin) max: 4.7
T[vj] [°C] max: 180.0
V[RRM] max: 600.0V
V[F]/I[F] [V/kA](@Tvj max): 0.89/8
V[RRM] [V]: 600.0
∫I2dt [A²s · 103](@10ms, Tvj max): 45100.0
V[T0] [V](@T[vj max]) max: 0.76
r[T] [mΩ](@T[vj max]) max: 0.18
Clamping force [kn] max: 56.0
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 75mm height 26mm / Ceramic
I[TAVM]: 1770 (180 ° el sin)
I[TAVM]/T[C] [A/°C](@180° el sin): 1770/85
I[TSM]: 28000.0A
I[TSM] [A](@10ms, Tvj max): 28000.0
R[thJC] [K/kW](@180° el sin) max: 18.5
T[vj] [°C] max: 135.0
V[DRM] / V[RRM] [V]: 1600.0
V[DRM]/ V[RRM (V)]: 1600.0V
V[T0] [V](@T[vj max]) max: 0.8
V[T]/I[T] [V/kA](@Tvj max): 1.30/3.0
r[T] [mΩ](@T[vj max]) max: 0.167
t[q] [µs]: 230.0
∫I2dt [A²s · 103](@10ms, Tvj max): 3920.0