INFINEON
Infineon 英飞凌专注于迎接现代社会的三大科技挑战： 高能效、 移动性和 安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。
Clamping force [kn] max: 45.0
Configuration: Rectifier Diodes / Welding Diodes
Housing: Disc dia 56mm height 5,0 mm
I[(FSM)] max: 70000.0A
I[FAVM]/T[C] [A/°C](@180° el sin): 10300/100
I[FAVM]/T[c]: 10300/100 (180 ° el sin)
I[FSM] [A](@10ms, Tvj max): 70000.0
R[thJC] [K/kW](@180° el sin) max: 5.8
T[vj] [°C] max: 180.0
V[RRM] max: 600.0V
V[F]/I[F] [V/kA](@Tvj max): 0.94/8
V[RRM] [V]: 600.0
∫I2dt [A²s · 103](@10ms, Tvj max): 24500.0
V[T0] [V](@T[vj max]) max: 0.73
r[T] [mΩ](@T[vj max]) max: 0.24
Suitable for: Disc type devices
Housing: T120.26K
Housing: T120.35K
Housing: T150.26K
Housing: T150.35K
Housing: T172.26K
Features: Gatelead L=750/0.8 HP
Features: Connector [mm] 6.3 x 0.8/4.8 x 0.8
Features: Sleeve material: PTFE AWG6, d = 4,12 mm
Clamping force [kn] max: 6.0
Diameter [mm]: 42.0
Height [mm]: 14.0
Creeping distance [mm] min: 11.0
Suitable for: Disc type devices
Housing: T42/14
Features: Housing diameter: 42 mm
Features: Height: 14 mm
Features: Easy mounting for single sided cooling
Features: Clamping force: 6.0 kN
Features: Min creeping distance: 11 mm
V[DRM]/ V[RRM (V)]: 2800.0V
I[TSM]: 28000.0A
I[TAVM]: 1590 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 100mm height 26mm / Ceramic
V[DRM] / V[RRM] [V]: 2800.0
I[TAVM]/T[C] [A/°C](@180° el sin): 1590/85
I[TSM] [A](@10ms, Tvj max): 28000.0
∫I2dt [A²s · 103](@10ms, Tvj max): 3920.0
V[T]/I[T] [V/kA](@Tvj max): 2.45/5.0
V[T0] [V](@T[vj max]) max: 1.1
r[T] [mΩ](@T[vj max]) max: 0.237
t[q] [µs]: 400.0
R[thJC] [K/kW](@180° el sin) max: 12.5
T[vj] [°C] max: 125.0
Clamping force [kn] max: 65.0
Clamping force [kn] max: 6.0
Diameter [mm]: 42.0
Height [mm]: 14.0
Creeping distance [mm] min: 11.0
Suitable for: Disc type devices
Housing: T42/14
Features: Housing diameter: 42 mm
Features: Height: 14 mm
Features: Easy mounting for single sided cooling
Features: Clamping force: 6.0 kN
Features: Min. creeping distance: 11 mm
Clamping force [kn] max: 20.0
Diameter [mm]: 75.0
Height [mm]: 26.0
Creeping distance [mm] min: 26.0
Suitable for: Disc type devices
Housing: T75/26
Features: Housing diameter: 75 mm
Features: Height: 26 mm
Features: Easy mounting for single sided cooling
Features: Clamping force: 20.0 kN
Features: Min. creeping distance: 26 mm
Features: Length: 3000 mm
Features: Mono glass fiber: 200 μm
Features: Pre-tested with pull force of 350 N/mm2
Features: Compatible with Laser diode SPL PL90
Housing: T150.40L
Housing: T172.40L
Suitable for: Light Triggered Thyristors (LTT)
Suitable for: Light Triggered Thyristors (LTT)
Housing: T76.35L
Features: Mono glass fiber: 200 μm
Features: Pre-tested with pull force of 350 N/mm2
Features: Compatible with Laser diode SPL PL90
V[DRM]/ V[RRM (V)]: 1800.0V
I[TSM]: 33500.0A
I[TAVM]: 1500 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 75mm height 26mm / Ceramic
V[DRM] / V[RRM] [V]: 1800.0
I[TAVM]/T[C] [A/°C](@180° el sin): 1500/85
I[TSM] [A](@10ms, Tvj max): 33500.0
∫I2dt [A²s · 103](@10ms, Tvj max): 5611.0
V[T]/I[T] [V/kA](@Tvj max): 2.10/7.0
V[T0] [V](@T[vj max]): 0.9
r[T] [mΩ](@T[vj max]): 0.15
t[q] [µs]: 240.0
R[thJC] [K/kW](@180° el sin) max: 18.4
T[vj] [°C] max: 125.0
Clamping force [kn] max: 56.0
Clamping force [kn] max: 12.0
Diameter [mm]: 58.0
Height [mm]: 26.0
Creeping distance [mm] min: 23.0
Suitable for: Disc type devices
Housing: T58/26
Features: Housing diameter: 58 mm
Features: Height: 26 mm
Features: Easy mounting for single sided cooling
Features: Clamping force: 12.0 kN
Features: Min. creeping distance: 23 mm