INFINEON
Infineon 英飞凌专注于迎接现代社会的三大科技挑战： 高能效、 移动性和 安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。
Clamping force [kn] max: 40.0
Diameter [mm]: 75.0
Height [mm]: 26.0
Creeping distance [mm] min: 26.0
Suitable for: Disc type devices
Housing: T75/26
Features: Housing diameter: 75 mm
Features: Height: 26 mm
Features: Easy mounting for single sided cooling
Features: Clamping force: 40.0 kN
Features: Min. creeping distance: 26 mm
Clamping force [kn] max: 15.0
Diameter [mm]: 75.0
Height [mm]: 26.0
Creeping distance [mm] min: 23.0
Suitable for: Disc type devices
Housing: T75/26
Features: Housing diameter: 75 mm
Features: Height: 26 mm
Features: Easy mounting for single sided cooling
Features: Clamping force: 15.0 kN
Features: Min. creeping distance: 23 mm
Clamping force [kn] max: 4.5
Diameter [mm]: 42.0
Height [mm]: 14.0
Creeping distance [mm] min: 11.0
Suitable for: Disc type devices
Housing: T42/14
Features: Housing diameter: 42 mm
Features: Height: 14 mm
Features: Easy mounting for single sided cooling
Features: Clamping force: 4.5 kN
Features: Min. creeping distance: 11 mm
Clamping force [kn] max: 15.0
Diameter [mm]: 58.0
Height [mm]: 14.0
Creeping distance [mm] min: 11.0
Suitable for: Disc type devices
Housing: T58/14
Features: Housing diameter: 58 mm
Features: Height: 14 mm
Features: Easy mounting for single sided cooling
Features: Clamping force: 15.0 kN
Features: Min. creeping distance: 11 mm
Clamping force [kn] max: 8.0
Diameter [mm]: 48.0
Height [mm]: 14.0
Creeping distance [mm] min: 11.0
Suitable for: Disc type devices
Housing: T48/14
Features: Housing diameter: 48 mm
Features: Height: 14 mm
Features: Easy mounting for single sided cooling
Features: Clamping force: 8.0 kN
Features: Min. creeping distance: 11 mm
V[DRM]/ V[RRM (V)]: 1600.0V
I[TSM]: 15500.0A
I[TAVM]: 936 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 58mm height 14mm / Ceramic
V[DRM] / V[RRM] [V]: 1600.0
I[TAVM]/T[C] [A/°C](@180° el sin): 959/85
I[TSM] [A](@10ms, Tvj max): 15500.0
∫I2dt [A²s · 103](@10ms, Tvj max): 1200.0
V[T]/I[T] [V/kA](@Tvj max): 1.95/3.6
V[T0] [V](@T[vj max]) max: 0.85
r[T] [mΩ](@T[vj max]) max: 0.27
t[q] [µs]: 250.0
R[thJC] [K/kW](@180° el sin) max: 28.0
T[vj] [°C] max: 125.0
Clamping force [kn] max: 21.0
Clamping force [kn] max: 8.0
Diameter [mm]: 48.0
Height [mm]: 14.0
Creeping distance [mm] min: 11.0
Suitable for: Disc type devices
Housing: T48/14
Features: Housing diameter: 48 mm
Features: Height: 14 mm
Features: Easy mounting for single sided cooling
Features: Clamping force: 8.0 kN
Features: Min. creeping distance: 11 mm
Suitable for: Disc type devices
Housing: T42.14K0
Housing: T48.14K0
Housing: T58.14K0
Housing: T58.26K0
Housing: T75.26K0
Housing: T100.26K0 T111.26K0
Features: Gatelead L=750/0.5 MP
Features: Connector [mm] 4.8 x 0.5/2.8 x 0.5
Features: Sleeve material: PTFE AWG6, d = 4,12 mm
Clamping force [kn] max: 30.0
Diameter [mm]: 75.0
Height [mm]: 26.0
Creeping distance [mm] min: 26.0
Suitable for: Disc type devices
Housing: T75/26
Features: Housing diameter: 75 mm
Features: Height: 26 mm
Features: Easy mounting for single sided cooling
Features: Clamping force: 30.0 kN
Features: Min. creeping distance: 26 mm
IDH20G120C5
分类: 半导体分立器件和附件 / 二极管 / 普通二极管 / 功率二极管数据:
简介: CoolSiC™ Schottky diode 1200 V in TO-220 real2pin package
I(FSM): NoneA
IF: NoneA
IR: 8.5µA
Ptot: NoneW
Package: TO-220 real 2pin
QC: 82.0nC
RthJC: 0.35K/W
VF: 1.5V
VDC: NoneV
Qualification: Industrial