INFINEON
Infineon 英飞凌专注于迎接现代社会的三大科技挑战： 高能效、 移动性和 安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。
IDH16G120C5
分类: 半导体分立器件和附件 / 二极管 / 普通二极管 / 功率二极管数据:
简介: 1200 V Silicion Carbide Schottky diode in TO-220 real2pin package
I(FSM): NoneA
IF: NoneA
IR: 5.5µA
Ptot: NoneW
Package: TO-220 real 2pin
QC: 57.0nC
RthJC: 0.46K/W
VF: 1.65V
VDC: NoneV
Qualification: Industrial
V[DRM]/ V[RRM (V)]: 1600.0V
I[TSM]: 12500.0A
I[TAVM]: 718 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 58mm height 26mm / Ceramic
V[DRM] / V[RRM] [V]: 1600.0
I[TAVM]/T[C] [A/°C](@180° el sin): 718/85
I[TSM] [A](@10ms, Tvj max): 12500.0
∫I2dt [A²s · 103](@10ms, Tvj max): 781.0
V[T]/I[T] [V/kA](@Tvj max): 1.94/3.0
V[T0] [V](@T[vj max]) max: 0.85
r[T] [mΩ](@T[vj max]) max: 0.35
t[q] [µs]: 250.0
R[thJC] [K/kW](@180° el sin) max: 38.0
T[vj] [°C] max: 125.0
Clamping force [kn] max: 18.0
IDH08G120C5
分类: 半导体分立器件和附件 / 二极管 / 普通二极管 / 功率二极管数据:
简介: 1200 V Silicion Carbide Schottky diode in TO-220 real2pin package
I(FSM): NoneA
IF: NoneA
IR: 3.0µA
Ptot: NoneW
Package: TO-220 real 2pin
QC: 28.0nC
RthJC: 0.92K/W
VF: 1.65V
VDC: NoneV
Qualification: Industrial
IDH05G120C5
分类: 半导体分立器件和附件 / 二极管 / 普通二极管 / 功率二极管数据:
简介: 1200 V Silicion Carbide Schottky diode in TO-220 real2pin package
I(FSM): NoneA
IF: NoneA
IR: 2.5µA
Ptot: NoneW
Package: TO-220 real 2pin
QC: 24.0nC
RthJC: 1.06K/W
VF: 1.5V
VDC: NoneV
Qualification: Industrial
IDW40G120C5B
分类: 半导体分立器件和附件 / 二极管 / 普通二极管 / 功率二极管数据:
简介: 1200 V Silicon Carbide Schottky diode in TO-247-3 package
IF: NoneA
QC: 202.0nC
I(FSM): NoneA
VF: 1.4V
IR: 23.0µA
Ptot: NoneW
RthJC: 0.3K/W
Package: TO-247
VDC: NoneV
Qualification: Industrial
Clamping force [kn] max: 8.0
Diameter [mm]: 58.0
Height [mm]: 26.0
Creeping distance [mm] min: 23.0
Suitable for: Disc type devices
Housing: T58/26
Features: Housing diameter: 58 mm
Features: Height: 26 mm
Features: Easy mounting for single sided cooling
Features: Clamping force: 8.0 kN
Features: Min. creeping distance: 23 mm
IDW15G120C5B
分类: 半导体分立器件和附件 / 二极管 / 普通二极管 / 功率二极管数据:
简介: 1200 V Silicion Carbide Schottky diode in TO-247-3 package
IF: NoneA
QC: 82.0nC
I(FSM): NoneA
VF: 1.4V
IR: 8.0µA
Ptot: NoneW
RthJC: 0.6K/W
Package: TO-247
VDC: NoneV
Qualification: Industrial
IDW20G120C5B
分类: 半导体分立器件和附件 / 二极管 / 普通二极管 / 功率二极管数据:
简介: 1200 V Silicion Carbide Schottky diode in TO-247-3 package
IF: NoneA
QC: 106.0nC
I(FSM): NoneA
VF: 1.4V
IR: 12.0µA
Ptot: NoneW
RthJC: 0.45K/W
Package: TO-247
VDC: NoneV
Qualification: Industrial
Clamping force [kn] max: 30.0
Configuration: Rectifier Diodes / Welding Diodes
Housing: Disc dia 38mm height 4,0 mm
I[(FSM)] max: 32300.0A
I[FAVM]/T[C] [A/°C](@180° el sin): 5820/100
I[FAVM]/T[c]: 5820/100 (180° el sin)
I[FSM] [A](@10ms, Tvj max): 32300.0
R[thJC] [K/kW](@180° el sin) max: 9.6
T[vj] [°C] max: 180.0
V[RRM] max: 600.0V
V[RRM] [V]: 600.0
∫I2dt [A²s · 103](@10ms, Tvj max): 5200.0
V[F]/I[F] [V/kA](@Tvj max): 0,96/4.5
V[T0] [V](@T[vj max]) max: 0.74
r[T] [mΩ](@T[vj max]) max: 0.049
I[FSM] [A](@10ms, Tvj max): 4800.0
Configuration: Rectifier Diodes / Welding Diodes
Housing: Disc dia 46mm height 4,0 mm
I[(FSM)] max: 52000.0A
T[vj] [°C] max: 180.0
V[RRM] max: 600.0V
V[RRM] [V]: 600.0
∫I2dt [A²s · 103](@10ms, Tvj max): 11520.0
Clamping force [kn] max: 45.0
I[FAVM]/T[C] [A/°C](@180° el sin): 7640/100
I[FAVM]/T[c]: 7640/100 (180 ° el sin)
R[thJC] [K/kW](@180° el sin) max: 7.23
V[F]/I[F] [V/kA](@Tvj max): 0.98/6
V[T0] [V](@T[vj max]) max: 0.78
r[T] [mΩ](@T[vj max]) max: 0.034