INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战：高能效、移动性和安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

BSS192P

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: P-channel enhancement mode Field-Effect Transistor (FET), -250 V, SOT-89

VDS: NoneV Ptot: NoneW IDpuls: NoneA VGS(th): NoneV Rth: 125.0K/W RthJA: NoneK/W Pin Count: 4.0Pins Package: SOT-89 Polarity: P Mounting: SMD Mode: Enhancement Ciss: 83.0pF Coss: 13.0pF Special Features: Small Power QG(typ @10V): -4.9nC RDS (on)(@10V): NonemΩ ID (@25°C): NoneA Operating Temperature: None°C Budgetary Price €/1k: 0.13

ISP25DP06NM

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: P-channel MOSFET in normal and logic level, reducing design complexity in medium and low power applications

ID (@25°C): NoneA IDpuls: NoneA Operating Temperature: None°C Ptot: NoneW Package: SOT-223 Polarity: P QG(typ @10V): -10.8nC RDS (on)(@10V): NonemΩ VDS: NoneV VGS(th): NoneV Special Features: Small Power Budgetary Price €/1k: 0.2

BSR92P

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: P-channel enhancement mode Field-Effect Transistor (FET), -250 V, SC-59

Rth: 250.0K/W Ptot: NoneW VDS: NoneV VGS(th): NoneV Operating Temperature: None°C IDpuls: NoneA Mounting: SMD Mode: Enhancement Package: SC59 Polarity: P Ciss: 82.0pF Coss: 12.0pF Special Features: Small Signal QG(typ @10V): -3.6nC RDS (on)(@10V): NonemΩ ID (@25°C): NoneA Budgetary Price €/1k: 0.12

BSL606SN

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N-Channel Small Signal MOSFET 60 V in TSOP-6 package

IDpuls: NoneA VGS(th): NoneV Rth: 62.5K/W RthJA: NoneK/W Pin Count: 6.0Pins Ptot: NoneW VDS: NoneV Package: TSOP-6 Polarity: N Mounting: SMD Mode: Enhancement Ciss: 494.0pF Coss: 131.0pF Special Features: Small Power RDS (on)(@10V): NonemΩ ID (@25°C): NoneA QG(typ @4.5V): NonenC Operating Temperature: None°C Budgetary Price €/1k: 0.18

BSS83P

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: P-channel enhancement mode Field-Effect Transistor (FET), -60 V, SOT-23

IDpuls: NoneA VGS(th): NoneV Rth: 350.0K/W Ptot: NoneW VDS: NoneV Package: SOT-23 Ciss: 62.0pF Coss: 19.0pF Special Features: Small Signal QG(typ @10V): 2.38nC RDS (on)(@10V): NonemΩ Polarity: P ID (@25°C): NoneA Operating Temperature: None°C Operating Temperature: None°C Budgetary Price €/1k: 0.05

BSD235N

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N-Channel Small Signal MOSFET 20 V in SOT363 package

IDpuls: NoneA VGS(th): NoneV RthJA: NoneK/W Ptot: NoneW VDS: NoneV Ciss: 49.0pF Coss: 23.0pF RDS (on): NonemΩ RDS (on)(@2.5V): NonemΩ RDS (on)(@4.5V): NonemΩ RDS (on)(@4.5V LL): NonemΩ Polarity: N+N ID (@25°C): NoneA QG(typ @4.5V): NonenC Operating Temperature: None°C Operating Temperature: None°C Package: SOT-363 Special Features: Dual VGS(th): 0.95V Budgetary Price €/1k: 0.07

BSD235C

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

IDpuls: NoneA IDpuls: NoneA VGS(th): NoneV VGS(th): NoneV Operating Temperature: None°C Pin Count: 6.0Pins Ptot: NoneW VDS: NoneV VDS: NoneV Package: SOT-363 Mounting: SMD Mode: Enhancement Ciss: 37.0pF Ciss: 47.0pF Coss: 17.0pF Coss: 24.0pF RDS (on)(@2.5V): NonemΩ RDS (on)(@2.5V): NonemΩ RDS (on)(@4.5V): NonemΩ RDS (on)(@4.5V): NonemΩ 更多

RDS (on)(@4.5V LL): NonemΩ RDS (on)(@4.5V LL): NonemΩ Special Features: Small Signal ID (@25°C): NoneA ID (@25°C): NoneA QG(typ @4.5V): NonenC Polarity: N+P Budgetary Price €/1k: 0.07

IRLTS6342

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: 30V Single N-Channel StrongIRFET™ MOSFET in a TSOP-6 (Micro 6) package

Mounting: SMD Ptot(@ TA=25°C): NoneW Qgd: 4.6nC Tj: None°C VGS: NoneV VDS: NoneV Moisture Sensitivity Level: 1 Polarity: N RthJA: NoneK/W Package: TSOP-6 RDS (on)(@4.5V): NonemΩ VGS(th): 0.8V ID (@25°C): NoneA QG(typ @4.5V): 11.0nC Special Features: Small Power Operating Temperature: None°C Budgetary Price €/1k: 0.12

BSS223PW

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: P-channel enhancement mode Field-Effect Transistor (FET), -20 V, SOT-223

IDpuls: NoneA VGS(th): NoneV Rth: 500.0K/W Ptot: NoneW VDS: NoneV Package: SOT-323 Ciss: 45.0pF Coss: 21.0pF Special Features: Small Signal RDS (on)(@4.5V): NonemΩ Polarity: P ID (@25°C): NoneA QG(typ @4.5V): NonenC Operating Temperature: None°C Operating Temperature: None°C Budgetary Price €/1k: 0.03

ISP20EP10LM

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: OptiMOS™ P-Channel MOSFET 100V in SOT-223

ID (@25°C): NoneA ID: NoneA IDpuls: NoneA Mounting: SMT Operating Temperature: None°C Ptot: NoneW Package: SOT-223 Pin Count: 4.0Pins Polarity: P QG(typ @4.5V): -1.8nC QG(typ @10V): -3.5nC QG: -3.5nC RDS (on)(@10V): NonemΩ RDS (on)(@4.5V): NonemΩ VDS: NoneV VGS(th): NoneV VGS(th): -1.5V Budgetary Price €/1k: 0.18