INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战：高能效、移动性和安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

IRLML0100

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: 100V Single N-Channel StrongIRFET™ Power MOSFET in a SOT-23 package

VGS: NoneV Polarity: N Mounting: SMD Ptot(@ TA=25°C): NoneW RthJA: NoneK/W VDS: NoneV Moisture Sensitivity Level: 1 Package: SOT-23 Qgd: 1.2nC Tj: None°C RDS (on)(@10V): NonemΩ RDS (on)(@4.5V): NonemΩ VGS(th): 1.75V ID (@25°C): NoneA QG(typ @4.5V): 2.5nC Special Features: Small Power Operating Temperature: None°C Budgetary Price €/1k: 0.08

BSP317P

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: P-channel enhancement mode Field-Effect Transistor (FET), -250 V, SOT-223

IDpuls: NoneA VGS(th): NoneV Rth: 115.0K/W Pin Count: 4.0Pins Ptot: NoneW VDS: NoneV Package: SOT-223 Polarity: P Mounting: SMD Mode: Enhancement Ciss: 210.0pF Coss: 30.0pF Special Features: Small Power QG(typ @10V): -11.6nC RDS (on)(@10V): NonemΩ ID (@25°C): NoneA Operating Temperature: None°C Budgetary Price €/1k: 0.25

BSS806N

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N-Channel Small Signal MOSFET 20 V in SOT-23 package

IDpuls: NoneA VGS(th): NoneV RthJA: NoneK/W Ptot: NoneW VDS: NoneV Package: SOT-23 Ciss: 370.0pF Coss: 118.0pF RDS (on): NonemΩ RDS (on)(@1.8V): NonemΩ RDS (on)(@2.5V): NonemΩ Special Features: Small Signal Polarity: N ID (@25°C): NoneA QG(typ @4.5V): NonenC Operating Temperature: None°C Operating Temperature: None°C Budgetary Price €/1k: 0.05

IRLML0030

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: 30V Single N-Channel StrongIRFET™ Power MOSFET in a SOT-23 package

Mounting: SMD Package: SOT-23 Ptot(@ TA=25°C): NoneW RthJA: NoneK/W VDS: NoneV VGS: NoneV Moisture Sensitivity Level: 1 Polarity: N Qgd: 1.1nC Tj: None°C RDS (on)(@10V): NonemΩ RDS (on)(@4.5V): NonemΩ VGS(th): 1.7V ID (@25°C): NoneA QG(typ @4.5V): 2.6nC Special Features: Small Power Operating Temperature: None°C Budgetary Price €/1k: 0.08

BSP613P

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: P-channel enhancement mode Field-Effect Transistor (FET), -60 V, SOT-223

IDpuls: NoneA VGS(th): NoneV Rth: 100.0K/W Pin Count: 4.0Pins Ptot: NoneW VDS: NoneV Package: SOT-223 Polarity: P Mounting: SMD Mode: Enhancement Ciss: 715.0pF Coss: 230.0pF Special Features: Small Power QG(typ @10V): 22.0nC RDS (on)(@10V): NonemΩ ID (@25°C): NoneA Operating Temperature: None°C Budgetary Price €/1k: 0.46

BSP295

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N-Channel Small Signal MOSFET 60 V in SOT-223 package

IDpuls: NoneA VGS(th): NoneV Pin Count: 4.0Pins Ptot: NoneW VDS: NoneV Package: SOT-223 Polarity: N Mounting: SMD Mode: Enhancement Ciss: 295.0pF Coss: 95.0pF Special Features: Small Power QG(typ @10V): 14.0nC RDS (on)(@10V): NonemΩ ID (@25°C): NoneA Operating Temperature: None°C Budgetary Price €/1k: 0.28

BSS127

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N-Channel Small Signal MOSFET 600 V in SOT23 package

IDpuls: NoneA VGS(th): NoneV RthJC: NoneK/W Ptot: NoneW VDS: NoneV Package: SOT-23 Ciss: 21.0pF Coss: 2.4pF Special Features: Small Signal QG(typ @10V): 0.65nC RDS (on)(@10V): NonemΩ Polarity: N ID (@25°C): NoneA Operating Temperature: None°C Operating Temperature: None°C Budgetary Price €/1k: 0.06

BSP125

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N-Channel Small Signal MOSFET 600 V in SOT223 package

VDS: NoneV IDpuls: NoneA VGS(th): NoneV RthJC: NoneK/W Pin Count: 4.0Pins Package: SOT-223 Polarity: N Mounting: SMD Mode: Enhancement Ciss: 100.0pF Coss: 8.2pF Special Features: Small Power QG(typ @10V): 4.4nC RDS (on)(@10V): NonemΩ ID (@25°C): NoneA Operating Temperature: None°C Budgetary Price €/1k: 0.26 Budgetary Price €/1k: 0.22

BSS139

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

IDpuls: NoneA VGS(th): -1.4V RthJC: NoneK/W Operating Temperature: None°C Pin Count: 3.0Pins Ptot: NoneW VDS: NoneV QG(typ @4.5V): 2.3nC ID (@25°C): NoneA Package: SOT-23 Mounting: SMD Mode: Depletion Ciss: 60.0pF Coss: 6.7pF RDS (on)(@10V): NonemΩ Special Features: Depletion mode Polarity: N RDS (on)(@0V): 30000.0mΩ Budgetary Price €/1k: 0.1

BSP135I

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N-channel depletion mode small-signal MOSFET for industrial and consumer applications in SOT-223 package

IDpuls: NoneA Mounting: SMT Operating Temperature: None°C Ptot: NoneW Package: SOT-223 Pin Count: 4.0Pins Polarity: N QG(typ @4.5V): 3.7nC RDS (on)(@10V): NonemΩ VDS: NoneV VGS(th): -1.4V ID (@25°C): NoneA Special Features: Depletion mode RDS (on)(@0V): 60000.0mΩ Budgetary Price €/1k: 0.32