INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战：高能效、移动性和安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

ISP650P06NM

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: P-channel MOSFET in normal and logic level, reducing design complexity in medium and low power applications

ID (@25°C): NoneA IDpuls: NoneA Operating Temperature: None°C Ptot: NoneW Package: SOT-223 Polarity: P QG(typ @10V): -39.0nC RDS (on)(@10V): NonemΩ VDS: NoneV VGS(th): NoneV Special Features: Small Power Budgetary Price €/1k: 0.47

ISS55EP06LM

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: P-channel MOSFETs in normal and logic level, reducing design complexity in medium and low power applications

ID (@25°C): NoneA IDpuls: NoneA Operating Temperature: None°C Ptot: NoneW Package: SOT-23 Polarity: P QG(typ @10V): -0.59nC RDS (on)(@10V): NonemΩ RDS (on)(@4.5V): NonemΩ VDS: NoneV Special Features: Small Signal VGS(th): -1.5V Budgetary Price €/1k: 0.03

BSR315P

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: P-channel enhancement mode Field-Effect Transistor (FET), -60 V, SC-59

Rth: 250.0K/W Ptot: NoneW VDS: NoneV VGS(th): NoneV Operating Temperature: None°C IDpuls: NoneA Mounting: SMD Mode: enhancement Package: SC59 Polarity: P Ciss: 132.0pF Coss: 42.0pF Special Features: Small Signal QG(typ @10V): 4.0nC RDS (on)(@10V): NonemΩ ID (@25°C): NoneA Budgetary Price €/1k: 0.13

IRLML9301

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: -30V Single P-Channel StrongIRFET™ Power MOSFET in a SOT-23 package

Mounting: SMD Package: SOT-23 Ptot(@ TA=25°C): NoneW RthJA: NoneK/W Tj: None°C VDS: NoneV VGS: NoneV Moisture Sensitivity Level: 1 Polarity: P Qgd: 2.5nC RDS (on)(@10V): NonemΩ RDS (on)(@4.5V): NonemΩ VGS(th): -1.85V ID (@25°C): NoneA QG(typ @4.5V): 4.8nC Special Features: Small Power Budgetary Price €/1k: 0.07

BSL316C

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

VDS: NoneV VDS: NoneV Ptot: NoneW IDpuls: NoneA IDpuls: NoneA VGS(th): NoneV VGS(th): NoneV Pin Count: 6.0Pins Package: TSOP-6 Mounting: SMD Mode: Enhancement Ciss: 212.0pF Ciss: 71.0pF Coss: 26.0pF Coss: 69.0pF RDS (on)(@10V): NonemΩ ID (@25°C): NoneA ID (@25°C): NoneA QG(typ @4.5V): NonenC Operating Temperature: None°C 更多

Polarity: N+P Special Features: Complimentary VGS(th): -1.5V VGS(th): 1.6V Budgetary Price €/1k: 0.12

BSS139I

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N-channel depletion mode small signal transistor for industrial and consumer applications in SOT-23-3 package

ID (@25°C): NoneA IDpuls: NoneA Mounting: SMT Operating Temperature: None°C Ptot: NoneW Package: SOT-23 Pin Count: 3.0Pins Polarity: N QG(typ @4.5V): 2.3nC RDS (on)(@10V): NonemΩ VDS: NoneV VGS(th): -1.4V Special Features: Depletion mode RDS (on)(@0V): 30000.0mΩ Budgetary Price €/1k: 0.08

BSL308PE

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: P-channel enhancement mode Field-Effect Transistor (FET), -30 V, TSOP-6

VDS: NoneV Ptot: NoneW IDpuls: NoneA VGS(th): NoneV Rth: 250.0K/W RthJA: NoneK/W Pin Count: 6.0Pins Package: TSOP-6 dual Polarity: P Mounting: SMD Mode: Enhancement Ciss: 376.0pF Coss: 196.0pF QG(typ @10V): -5.0nC RDS (on)(@10V): NonemΩ ID (@25°C): NoneA Operating Temperature: None°C Special Features: ESD protected VGS(th): -1.5V Budgetary Price €/1k: 0.17

BSS119N

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N-Channel Small Signal MOSFET 100 V in SOT23 package

IDpuls: NoneA VGS(th): NoneV RthJA: NoneK/W Ptot: NoneW VDS: NoneV Package: SOT-23 Ciss: 15.7pF Coss: 3.4pF Special Features: Small Signal QG(typ @10V): 0.6nC RDS (on)(@10V): NonemΩ Polarity: N ID (@25°C): NoneA Operating Temperature: None°C Operating Temperature: None°C Budgetary Price €/1k: 0.06

BSS306N

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: N-Channel Small Signal MOSFET 30 V in SOT-23 package

IDpuls: NoneA VGS(th): NoneV RthJA: NoneK/W Ptot: NoneW VDS: NoneV Package: SOT-23 Ciss: 207.0pF Coss: 75.0pF Special Features: Small Signal RDS (on)(@10V): NonemΩ Polarity: N ID (@25°C): NoneA QG(typ @4.5V): NonenC Operating Temperature: None°C Operating Temperature: None°C Budgetary Price €/1k: 0.06

BSS315P

分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
数据:

简介: P-channel enhancement mode Field-Effect Transistor (FET), -30 V, SOT-23

IDpuls: NoneA VGS(th): NoneV Rth: 250.0K/W Ptot: NoneW VDS: NoneV Package: SOT-23 Ciss: 212.0pF Coss: 69.0pF RDS (on): NonemΩ RDS (on)(@4.5V): NonemΩ RDS (on)(@4.5V LL): NonemΩ Special Features: Small Signal Polarity: P ID (@25°C): NoneA QG(typ @4.5V): NonenC Operating Temperature: None°C Operating Temperature: None°C Budgetary Price €/1k: 0.06