BBL4001-1E
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道，功率 MOSFET，60V，74A，6.1mΩ
状态: 已停产
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: TO-220
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 6.1
Vgs (V): 20
Vgs(th) Max (V): 2.6
ID Max (A): 74
PD Max (W): 35
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 18
更多
Ciss Typ (pF): 6900
Qgd Typ @ VGS = 4.5 V (nC): -
Qrr Typ (nC): -
Coss Typ (pF): 740
Crss Typ (pF): 540
Package Type: TO-220-3 FullPak
MSL Type: NA
MSL Temp (°C): 0
ON Target: No
参考价格: Price N/A
BUZ11-NR4941
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道功率 MOSFET 50V，30A，40mΩ
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: TO-220
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 50
RDS(on) Max @ VGS = 10 V (mΩ): 40
Vgs (V): ±20
Vgs(th) Max (V): 2
ID Max (A): 30
PD Max (W): 75
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 7
更多
Ciss Typ (pF): 1500
Qgd Typ @ VGS = 4.5 V (nC): -
Qrr Typ (nC): 250
Coss Typ (pF): 750
Crss Typ (pF): 250
Package Type: TO-220-3
MSL Type: NA
MSL Temp (°C): 0
ON Target: No
参考价格: $0.4956
状态: 量产中
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: Power 33
Type: Low-Medium Voltage
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Dual
OPN in older Technology: 0
V(BR)DSS Min (V): 24
RDS(on) Max @ VGS = 10 V (mΩ): -
Vgs (V): 12
Vgs(th) Max (V): 1.3
ID Max (A): 10
PD Max (W): 1.4
RDS(on) Max @ VGS = 2.5 V (mΩ): 21
RDS(on) Max @ VGS = 4.5 V (mΩ): 14
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 24
更多
Ciss Typ (pF): -
Qgd Typ @ VGS = 4.5 V (nC): 4.5
Qrr Typ (nC): -
Coss Typ (pF): -
Crss Typ (pF): -
Package Type: SOT-28 FL / ECH-8
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: $0.2985
FDB024N04AL7
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道 PowerTrench® MOSFET 40V, 219A, 2.4mΩ
状态: 已停产
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK7
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 40
RDS(on) Max @ VGS = 10 V (mΩ): 2.4
Vgs (V): ±20
Vgs(th) Max (V): 3
ID Max (A): 219
PD Max (W): 214
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 84
更多
Ciss Typ (pF): 5490
Qgd Typ @ VGS = 4.5 V (nC): 12
Qrr Typ (nC): 49
Coss Typ (pF): 1220
Crss Typ (pF): 155
Package Type: D2PAK-7 / TO-263-7
MSL Type: 1
MSL Temp (°C): 245
ON Target: No
参考价格: Price N/A
状态: 已停产
Compliance: Pb A H P
Channel Polarity: N-Channel
V(BR)DSS Min (V): 65
ID Typ (A): 7
rDS(on) Max (mΩ): 210
PD Max (W): 1.31
Package Type: DPAK-3
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: Price N/A
BS170-D74Z
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: 单N沟道小信号MOSFET，60V，500mA，5Ω
状态: 已停产
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: TO-92-3
Type: Small Signal
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 5000
VGS Max (V): 20
Vgs(th) Max (V): 3
Id Max (A): 0.5
PD Max (W): 0.83
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): -
更多
Ciss Typ (pF): 60
Qgd Typ @ VGS = 4.5 V (nC): -
Qrr Typ (nC): -
Coss Typ (pF): -
Crss Typ (pF): -
Package Type: TO-92-3 LF
MSL Type: NA
MSL Temp (°C): 0
ON Target: No
参考价格: Price N/A
2SJ661-DL-1E
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: P 沟道功率 MOSFET，-60V，-38A，39mΩ
状态: 已停产
Compliance: Pb A H P
Channel Polarity: P-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: Low-Medium Voltage
Gate Level: Logic
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): -60
RDS(on) Max @ VGS = 10 V (mΩ): 39
Vgs (V): 20
Vgs(th) Max (V): -
ID Max (A): -38
PD Max (W): 1
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): 56
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 80
更多
Ciss Typ (pF): 4360
Qgd Typ @ VGS = 4.5 V (nC): 12
Qrr Typ (nC): -
Coss Typ (pF): 470
Crss Typ (pF): 335
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: No
参考价格: Price N/A
状态: 已停产
Compliance: Pb A H P
Channel Polarity: -
V(BR)DSS Min (V): 5.5
ID Typ (A): 5.0E-7
rDS(on) Max (mΩ): -
PD Max (W): 1.56
Package Type: SOD-323
MSL Type: 1
MSL Temp (°C): 260
ON Target: No
参考价格: Price N/A
FDB029N06
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管
描述: N 沟道，PowerTrench® MOSFET，60V，193A，3.1mΩ
状态: 已停产
Compliance: Pb A H P
Channel Polarity: N-Channel
Silicon Family: PowerTrench® T1
Package Name: D2PAK
Type: Low-Medium Voltage
Gate Level: Standard
Wide SOA Mosfets: 0
Configuration: Single
OPN in older Technology: 0
V(BR)DSS Min (V): 60
RDS(on) Max @ VGS = 10 V (mΩ): 3.1
Vgs (V): 20
Vgs(th) Max (V): 4.5
ID Max (A): 193
PD Max (W): 231
RDS(on) Max @ VGS = 2.5 V (mΩ): -
RDS(on) Max @ VGS = 4.5 V (mΩ): -
Qg Typ @ VGS = 4.5 V (nC): -
Qg Typ @ VGS = 10 V (nC): 116
更多
Ciss Typ (pF): 7380
Qgd Typ @ VGS = 4.5 V (nC): 35
Qrr Typ (nC): 50
Coss Typ (pF): 1095
Crss Typ (pF): 415
Package Type: D2PAK-3 / TO-263-2
MSL Type: 1
MSL Temp (°C): 245
ON Target: No
参考价格: Price N/A
状态: 已停产
Compliance: Pb A H P
Configuration: null
VBR Max (V): 40V
RDS(on) Max (mΩ): 0.65
Package Type: APM20CBB / 20LD, PDD STD, R-EPS MODULE
MSL Type: NA
MSL Temp (°C): 0
ON Target: No
参考价格: Price N/A