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IQE030N06NM5CGSC

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ low-voltage power MOSFET 60 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance

I[D ](@25°C) max: 132.0A I[D ] max: 132.0A I[Dpuls] max: 528.0A Operating Temperature max: 175.0°C P[tot] max: 100.0W Package: PQFN 3.3x3.3 Source-Down Polarity: N Q[G](typ @10V): 39.0nC Q[G]: 39.0nC R[DS (on)](@10V) max: 3.0mΩ R[DS (on)] max: 3.0mΩ V[DS] max: 60.0V V[GS(th)]: 2.8V Special Features: Center-Gate Dual-Side Cooling Budgetary Price €/1k: 1.0

IQE030N06NM5SC

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ low-voltage power MOSFET 60 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance

BSZ065N06LS5

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package

I[Dpuls] max: 260.0A Mounting: SMD P[tot] max: 46.0W Pin Count: 8.0Pins Polarity: N Q[G](typ @4.5V): 10.0nC Q[gd]: 3.3nC R[th] max: 2.7K/W R[thJA] max: 62.0K/W R[thJC] max: 2.7K/W V[DS] max: 60.0V C[iss]: 1400.0pF C[oss]: 300.0pF R[DS (on)](@10V) max: 6.5mΩ R[DS (on)](@4.5V) max: 9.4mΩ R[DS (on)](@4.5V LL) max: 9.4mΩ Package: PQFN 3.3 x 3.3 I[D ](@25°C) max: 65.0A V[GS(th)]: 1.7V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.29

BSZ084N08NS5

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: Industry leading power MOSFET technology for telecom and server applications with OptiMOS™ 5 80V in S3O8 package

I[Dpuls] max: 160.0A Mounting: SMD P[tot] max: 63.0W Pin Count: 8.0Pins Polarity: N Q[G](typ @10V): 20.0nC R[th]: 2.0K/W R[thJA] max: 60.0K/W R[thJC] max: 2.0K/W V[DS] max: 80.0V C[iss]: 1400.0pF C[oss]: 240.0pF R[DS (on)](@10V) max: 8.4mΩ Package: PQFN 3.3 x 3.3 I[D ](@25°C) max: 40.0A V[GS(th)]: 3.0V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.42

IQE030N06NM5CG

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ low-voltage power MOSFET 60 V in PQFN 3.3x3.3 Source-Down package with industry leading RDS(on) and superior thermal performance.

I[D ](@25°C) max: 137.0A Package: PQFN 3.3x3.3 Source-Down Polarity: N Q[G](typ @10V): 39.0nC R[DS (on)](@10V) max: 3.0mΩ V[DS] max: 60.0V V[GS(th)]: 2.8V Operating Temperature max: 175.0°C Special Features: Center-Gate Budgetary Price €/1k: 0.92

IQE050N08NM5SC

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ low-voltage power MOSFET 80 V in PQFN 3.3x3.3 Source-Down DSC package with industry leading RDS(on) and superior thermal performance

I[D ](@25°C) max: 99.0A I[D ] max: 99.0A I[Dpuls] max: 396.0A Operating Temperature max: 175.0°C P[tot] max: 100.0W Package: PQFN 3.3x3.3 Source-Down Polarity: N Q[G](typ @10V): 35.0nC Q[G]: 35.0nC R[DS (on)](@10V) max: 5.0mΩ R[DS (on)] max: 5.0mΩ V[DS] max: 80.0V V[GS(th)]: 3.0V Special Features: Dual-Side Cooling Budgetary Price €/1k: 1.01

BSZ040N06LS5

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 power MOSFETs logic level provide low RDS(on) in a small package

I[Dpuls] max: 404.0A Mounting: SMD P[tot] max: 69.0W Pin Count: 8.0Pins Polarity: N Q[G](typ @4.5V): 18.0nC Q[gd]: 5.3nC R[th] max: 1.8K/W R[thJA] max: 62.0K/W R[thJC] max: 1.8K/W V[DS] max: 60.0V C[iss]: 2400.0pF C[oss]: 500.0pF R[DS (on)](@10V) max: 4.0mΩ R[DS (on)](@4.5V) max: 5.6mΩ R[DS (on)](@4.5V LL) max: 5.6mΩ Package: PQFN 3.3 x 3.3 I[D ](@25°C) max: 101.0A V[GS(th)]: 1.7V Operating Temperature max: 150.0°C Budgetary Price €/1k: 0.39

IQE030N06NM5

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: Source-Down Products with industry leading RDS(on) and superior thermal performance

IQE046N08LM5CGSC

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down Center-Gate DSC package

I[D ](@25°C) max: 99.0A I[Dpuls] max: 396.0A Operating Temperature max: 175.0°C P[tot] max: 100.0W Package: PQFN 3.3x3.3 Source-Down Polarity: N Q[G](typ @4.5V): 19.0nC Q[G](typ @10V): 38.0nC R[DS (on)](@10V) max: 4.6mΩ R[DS (on)](@4.5V) max: 5.9mΩ V[DS] max: 80.0V V[GS(th)]: 1.7V Special Features: Center-Gate Dual-Side Cooling Budgetary Price €/1k: 1.17

IQE046N08LM5SC

数据:
分类: 半导体分立器件和附件 / 晶体管 / 普通晶体管 / 场效应晶体管 / 绝缘栅场效应晶体管

描述: OptiMOS™ 5 power MOSFET 80 V logic level in PQFN 3.3x3.3 Source-Down DSC package