NSVF6001SB6T1G
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 微波晶体管
描述: 射频晶体管,NPN 单,12 V,100 mA,fT = 6.7 GHz
状态: Lifetime 相似产品推荐
Compliance: Pb A H P
Polarity: NPN
IC Continuous (A): 0.1
VCEO(sus) Min (V): 12
hFE Min: 90
hFE Max: 180
PTM Max (W): 0.8
fT Min (MHz): 5000
NF Typ. (dB): 1.1
|S21e| 2 Typ. (dB): 11
Package Type: CPH-6
MSL Type: 1
MSL Temp (°C): 260
ON Target: N
Reference Price: $0.1955
状态: Lifetime 相似产品推荐
Compliance: Pb A H P
Polarity: NPN
IC Continuous (A): 0.15
VCEO(sus) Min (V): 12
hFE Min: 100
hFE Max: 180
PTM Max (W): 0.8
fT Min (MHz): 7000
NF Typ. (dB): 1.8
|S21e| 2 Typ. (dB): 9
Package Type: CPH-6
MSL Type: 1
MSL Temp (°C): 260
ON Target: N
Reference Price: $0.1955
2SC5347AF-TD-E
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 微波晶体管
描述: 射频晶体管,NPN 单 PCP,12 V,150 mA,fT = 4.7 GHz
状态: Lifetime
Compliance: Pb A H P
Polarity: NPN
IC Continuous (A): 0.15
VCEO(sus) Min (V): 12
hFE Min: 135
hFE Max: 270
PTM Max (W): 1.3
fT Min (MHz): 3000
NF Typ. (dB): 1.8
|S21e| 2 Typ. (dB): 8
Package Type: SOT-89 / PCP-1
MSL Type: 1
MSL Temp (°C): 260
ON Target: N
Reference Price: $0.2133
2SC5227A-4-TB-E
制造商: ONSEMI数据:
分类: 半导体分立器件和附件 / 晶体管 / 微波晶体管
描述: 射频晶体管,NPN 单 CP,10 V,70 mA,fT = 7 GHz
状态: Lifetime 相似产品推荐
Compliance: Pb A H P
Polarity: NPN
IC Continuous (A): 0.07
VCEO(sus) Min (V): 10
hFE Min: 90
hFE Max: 180
PTM Max (W): 0.2
fT Min (MHz): 7000
NF Typ. (dB): 1
|S21e| 2 Typ. (dB): 12
Package Type: SC-59-3 / CP-3
MSL Type: 1
MSL Temp (°C): 260
ON Target: N
Reference Price: $0.0849
ID: NonemA
Ptot: NonemW
Cdss: 1.1pF
Cg1ss: 2.1pF
F: 1.8dB
Gp: 20.0dB
Package: SOT143
gfs: 24.0mS
Maximum Drain-source voltage Vds: 12.0V
Maximum Continuous Drain current ID: 30.0mA
Forward transconductance gfs: 24.0mS
Gate input capacitance Cg1ss: 2.1pF
Output capacitance Cdss: 1.1pF
Noise figure F: 1.80 dB @800 MHz
Power gain Gp: 20 dB @800 MHz
ID: NonemA
Ptot: NonemW
Cdss: 1.0pF
Cg1ss: 2.5pF
F: 1.0dB
Gp: 25.0dB
Package: SOT23
gfs: 16.0mS
Maximum Continuous Drain current ID: 30.0mA
Maximum Drain-source voltage Vds: 20.0V
Forward transconductance gfs: 16.0mS
Gate input capacitance Cg1ss: 2.5pF
Output capacitance Cdss: 0.9pF
Noise figure F: 2.10 dB @45 MHz
Power gain Gp: 27 dB @45 MHz
Ptot: NonemW
VS: NoneV
Vdrop: 0.65V
ID (multiple): 10 mA
Supply Voltage: NoneV
Output Current: NonemA