NSVF6001SB6T1G

制造商: ONSEMI
数据:
分类: 半导体分立器件和附件 / 晶体管 / 微波晶体管

描述: 射频晶体管,NPN 单,12 V,100 mA,fT = 6.7 GHz

状态: Lifetime 相似产品推荐 Compliance: Pb A H P Polarity: NPN IC Continuous (A): 0.1 VCEO(sus) Min (V): 12 hFE Min: 90 hFE Max: 180 PTM Max (W): 0.8 fT Min (MHz): 5000 NF Typ. (dB): 1.1 |S21e| 2 Typ. (dB): 11 Package Type: CPH-6 MSL Type: 1 MSL Temp (°C): 260 ON Target: N Reference Price: $0.1955

NSVF6003SB6T1G

制造商: ONSEMI
数据:
分类: 半导体分立器件和附件 / 晶体管 / 微波晶体管

描述: 射频晶体管,NPN 单,12 V,150 mA,fT = 7 GHz

状态: Lifetime 相似产品推荐 Compliance: Pb A H P Polarity: NPN IC Continuous (A): 0.15 VCEO(sus) Min (V): 12 hFE Min: 100 hFE Max: 180 PTM Max (W): 0.8 fT Min (MHz): 7000 NF Typ. (dB): 1.8 |S21e| 2 Typ. (dB): 9 Package Type: CPH-6 MSL Type: 1 MSL Temp (°C): 260 ON Target: N Reference Price: $0.1955

2SC5347AF-TD-E

制造商: ONSEMI
数据:
分类: 半导体分立器件和附件 / 晶体管 / 微波晶体管

描述: 射频晶体管,NPN 单 PCP,12 V,150 mA,fT = 4.7 GHz

状态: Lifetime Compliance: Pb A H P Polarity: NPN IC Continuous (A): 0.15 VCEO(sus) Min (V): 12 hFE Min: 135 hFE Max: 270 PTM Max (W): 1.3 fT Min (MHz): 3000 NF Typ. (dB): 1.8 |S21e| 2 Typ. (dB): 8 Package Type: SOT-89 / PCP-1 MSL Type: 1 MSL Temp (°C): 260 ON Target: N Reference Price: $0.2133

2SC5227A-4-TB-E

制造商: ONSEMI
数据:
分类: 半导体分立器件和附件 / 晶体管 / 微波晶体管

描述: 射频晶体管,NPN 单 CP,10 V,70 mA,fT = 7 GHz

状态: Lifetime 相似产品推荐 Compliance: Pb A H P Polarity: NPN IC Continuous (A): 0.07 VCEO(sus) Min (V): 10 hFE Min: 90 hFE Max: 180 PTM Max (W): 0.2 fT Min (MHz): 7000 NF Typ. (dB): 1 |S21e| 2 Typ. (dB): 12 Package Type: SC-59-3 / CP-3 MSL Type: 1 MSL Temp (°C): 260 ON Target: N Reference Price: $0.0849
ID: NonemA Ptot: NonemW Cdss: 1.1pF Cg1ss: 2.1pF F: 1.8dB Gp: 20.0dB Package: SOT143 gfs: 24.0mS Maximum Drain-source voltage Vds: 12.0V Maximum Continuous Drain current ID: 30.0mA Forward transconductance gfs: 24.0mS Gate input capacitance Cg1ss: 2.1pF Output capacitance Cdss: 1.1pF Noise figure F: 1.80 dB @800 MHz Power gain Gp: 20 dB @800 MHz
ID: NonemA Ptot: NonemW Cdss: 1.0pF Cg1ss: 2.5pF F: 1.0dB Gp: 25.0dB Package: SOT23 gfs: 16.0mS Maximum Continuous Drain current ID: 30.0mA Maximum Drain-source voltage Vds: 20.0V Forward transconductance gfs: 16.0mS Gate input capacitance Cg1ss: 2.5pF Output capacitance Cdss: 0.9pF Noise figure F: 2.10 dB @45 MHz Power gain Gp: 27 dB @45 MHz
Ptot: NonemW VS: NoneV Vdrop: 0.65V ID (multiple): 10 mA Supply Voltage: NoneV Output Current: NonemA