V[DRM]/ V[RRM (V)]: 3400.0V I[TSM]: 37000.0A I[TAVM]: 2180 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 111mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 3400.0 I[TAVM]/T[C] [A/°C](@180° el sin): 2180/85 I[TSM] [A](@10ms, Tvj max): 37000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 6850.0 V[T]/I[T] [V/kA](@Tvj max): 2.90/8.0 V[T0] [V](@T[vj max]) max: 1.08 r[T] [mΩ](@T[vj max]) max: 0.2 t[q] [µs]: 450.0 R[thJC] [K/kW](@180° el sin) max: 8.5 T[vj] [°C] max: 125.0 Clamping force [kn] max: 65.0
V[DRM]/ V[RRM (V)]: 2200.0V I[TSM]: 40000.0A I[TAVM]: 2400 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 111mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 2200.0 I[TAVM]/T[C] [A/°C](@180° el sin): 2400/85 I[TSM] [A](@10ms, Tvj max): 40000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 8000.0 V[T]/I[T] [V/kA](@Tvj max): 2.65/8.8 V[T0] [V](@T[vj max]) max: 1.05 r[T] [mΩ](@T[vj max]) max: 0.154 t[q] [µs]: 400.0 R[thJC] [K/kW](@180° el sin) max: 8.5 T[vj] [°C] max: 125.0 Clamping force [kn] max: 95.0

T2563NH80TOH


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 8000 V Light Triggered Phase Control Thyristor Diode Disc

V[DRM]/ V[RRM (V)]: 8000.0V I[TSM]: 90000.0A I[TAVM]: 2300 (180 ° el sin) Configuration: Light Triggered Phase Control Thyristor Housing: Disc dia 172mm height 40mm / Ceramic V[DRM] / V[RRM] [V]: 8000.0 I[TAVM]/T[C] [A/°C](@180° el sin): 2300/85 I[TSM] [A](@10ms, Tvj max): 90000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 40500.0 V[T]/I[T] [V/kA](@Tvj max): 2.95/5.0 V[T0] [V](@T[vj max]) max: 1.2 r[T] [mΩ](@T[vj max]) max: 0.35 t[q] [µs]: 550.0 R[thJC] [K/kW](@180° el sin) max: 4.8 T[vj] [°C] max: 120.0 Clamping force [kn] max: 130.0
V[DRM]/ V[RRM (V)]: 3200.0V I[TSM]: 37000.0A I[TAVM]: 2180 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 111mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 3200.0 I[TAVM]/T[C] [A/°C](@180° el sin): 2180/85 I[TSM] [A](@10ms, Tvj max): 37000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 6850.0 V[T]/I[T] [V/kA](@Tvj max): 2.90/8.0 V[T0] [V](@T[vj max]) max: 1.08 r[T] [mΩ](@T[vj max]) max: 0.2 t[q] [µs]: 450.0 R[thJC] [K/kW](@180° el sin) max: 8.5 T[vj] [°C] max: 125.0 Clamping force [kn] max: 65.0
V[DRM]/ V[RRM (V)]: 3600.0V I[TSM]: 87000.0A I[TAVM]: 4150 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 150mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 3600.0 I[TAVM]/T[C] [A/°C](@180° el sin): 3830/85 I[TSM] [A](@10ms, Tvj max): 87000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 37850.0 V[T]/I[T] [V/kA](@Tvj max): 1.40/4.0 V[T0] [V](@T[vj max]) max: 0.82 r[T] [mΩ](@T[vj max]) max: 0.145 t[q] [µs]: 300.0 R[thJC] [K/kW](@180° el sin) max: 4.8 T[vj] [°C] max: 125.0 Clamping force [kn] max: 91.0
V[DRM]/ V[RRM (V)]: 4200.0V I[TSM]: 36000.0A I[TAVM]: 1550 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 120mm height 35mm / Ceramic V[DRM] / V[RRM] [V]: 4200.0 I[TAVM]/T[C] [A/°C](@180° el sin): 1590/85 I[TSM] [A](@10ms, Tvj max): 36000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 6480.0 V[T]/I[T] [V/kA](@Tvj max): 1.95/2.0 V[T0] [V](@T[vj max]) max: 1.29 r[T] [mΩ](@T[vj max]) max: 0.33 t[q] [µs]: 350.0 R[thJC] [K/kW](@180° el sin) max: 9.7 T[vj] [°C] max: 125.0 Clamping force [kn] max: 52.0
V[DRM]/ V[RRM (V)]: 2200.0V I[TSM]: 35000.0A I[TAVM]: 1960 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 100mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 2200.0 I[TAVM]/T[C] [A/°C](@180° el sin): 1960/85 I[TSM] [A](@10ms, Tvj max): 35000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 6125.0 V[T]/I[T] [V/kA](@Tvj max): 2.20/8.0 V[T0] [V](@T[vj max]) max: 0.9 r[T] [mΩ](@T[vj max]) max: 0.15 t[q] [µs]: 300.0 R[thJC] [K/kW](@180° el sin) max: 12.5 T[vj] [°C] max: 125.0 Clamping force [kn] max: 65.0

T2600N18TOFVT


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 1800 V phase control thyristor disc

∫I2dt [A²s · 103](@10ms, Tvj max): 6480.0 t[q] [µs]: 250.0 V[DRM]/ V[RRM (V)]: 1800.0V V[DRM] / V[RRM] [V]: 1800.0 T[vj] [°C] max: 135.0 R[thJC] [K/kW](@180° el sin) max: 12.5 I[TSM] [A](@10ms, Tvj max): 36000.0 I[TSM]: 36000.0A I[TAVM]/T[C] [A/°C](@180° el sin): 2610/85 I[TAVM]: 2610 (180° el sin) Housing: Disc dia 100mm height 26mm / Ceramic Configuration: Electrical Triggered Phase Control Thyristor Clamping force [kn] max: 65.0 V[T]/I[T] [V/kA]: 1.70/8.0 (@Tvj max)

T2180N18TOFVT


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 1800 V phase control thyristor disc

V[DRM]/ V[RRM (V)]: 1800.0V I[TSM]: 38000.0A I[TAVM]: 2180 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 100mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 1800.0 I[TAVM]/T[C] [A/°C](@180° el sin): 2180/85 I[TSM] [A](@10ms, Tvj max): 36000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 7220.0 V[T]/I[T] [V/kA](@Tvj max): 2.05/8.0 V[T0] [V](@T[vj max]): 0.9 r[T] [mΩ](@T[vj max]): 0.106 t[q] [µs]: 250.0 R[thJC] [K/kW](@180° el sin) max: 12.5 T[vj] [°C] max: 125.0 Clamping force [kn] max: 65.0

T2180N16TOFVT


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 1600 V phase control thyristor disc

V[DRM]/ V[RRM (V)]: 1600.0V I[TSM]: 38000.0A I[TAVM]: 2180 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 100mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 1600.0 I[TAVM]/T[C] [A/°C](@180° el sin): 2180/85 I[TSM] [A](@10ms, Tvj max): 36000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 7220.0 V[T]/I[T] [V/kA](@Tvj max): 2.05/8.0 V[T0] [V](@T[vj max]) max: 0.9 r[T] [mΩ](@T[vj max]) max: 0.106 t[q] [µs]: 250.0 R[thJC] [K/kW](@180° el sin) max: 12.5 T[vj] [°C] max: 125.0 Clamping force [kn] max: 65.0