T2600N16TOFVT


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 1600 V phase control thyristor disc

∫I2dt [A²s · 103](@10ms, Tvj max): 6480.0 t[q] [µs]: 250.0 V[DRM]/ V[RRM (V)]: 1600.0V V[DRM] / V[RRM] [V]: 1600.0 T[vj] [°C] max: 135.0 R[thJC] [K/kW](@180° el sin) max: 12.5 I[TSM] [A](@10ms, Tvj max): 36000.0 I[TSM]: 36000.0A I[TAVM]/T[C] [A/°C](@180° el sin): 2610/85 I[TAVM]: 2610 (180° el sin) Housing: Disc dia 100mm height 26mm / Ceramic Configuration: Electrical Triggered Phase Control Thyristor Clamping force [kn] max: 65.0 V[T]/I[T] [V/kA]: 1.70/8.0 (@Tvj max)

T2180N14TOFVT


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 1800 V phase control thyristor disc

V[DRM]/ V[RRM (V)]: 1400.0V I[TSM]: 38000.0A I[TAVM]: 2180 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 100mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 1400.0 I[TAVM]/T[C] [A/°C](@180° el sin): 2180/85 I[TSM] [A](@10ms, Tvj max): 36000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 7220.0 V[T]/I[T] [V/kA](@Tvj max): 2.05/8.0 V[T0] [V](@T[vj max]) max: 0.9 r[T] [mΩ](@T[vj max]) max: 0.106 t[q] [µs]: 250.0 R[thJC] [K/kW](@180° el sin) max: 12.5 T[vj] [°C] max: 125.0 Clamping force [kn] max: 65.0

T1500N16TOFVT


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 1600 V phase control thyristor disc

V[DRM]/ V[RRM (V)]: 1600.0V I[TSM]: 33500.0A I[TAVM]: 1500 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 75mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 1600.0 I[TAVM]/T[C] [A/°C](@180° el sin): 1500/85 I[TSM] [A](@10ms, Tvj max): 33500.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 5611.0 V[T]/I[T] [V/kA](@Tvj max): 2.10/7.0 V[T0] [V](@T[vj max]) max: 0.9 r[T] [mΩ](@T[vj max]) max: 0.15 t[q] [µs]: 240.0 R[thJC] [K/kW](@180° el sin) max: 18.4 T[vj] [°C] max: 125.0 Clamping force [kn] max: 56.0

T1500N14TOFVT


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 1800 V phase control thyristor disc

V[DRM]/ V[RRM (V)]: 1400.0V I[TSM]: 33500.0A I[TAVM]: 1500 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 75mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 1400.0 I[TAVM]/T[C] [A/°C](@180° el sin): 1500/85 I[TSM] [A](@10ms, Tvj max): 33500.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 5611.0 V[T]/I[T] [V/kA](@Tvj max): 2.10/7.0 V[T0] [V](@T[vj max]) max: 0.9 r[T] [mΩ](@T[vj max]) max: 0.15 t[q] [µs]: 240.0 R[thJC] [K/kW](@180° el sin) max: 18.4 T[vj] [°C] max: 125.0 Clamping force [kn] max: 56.0
V[DRM]/ V[RRM (V)]: 6500.0V I[TSM]: 32000.0A I[TAVM]: 1613 / 85° (180° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 111mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 6500.0 I[TAVM]/T[C] [A/°C](@180° el sin): 1613/85 I[TSM] [A](@10ms, Tvj max): 32000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 5120.0 V[T]/I[T] [V/kA](@Tvj max): 3.3/4.5 V[T0] [V](@T[vj max]) max: 1.35 r[T] [mΩ](@T[vj max]) max: 0.43 t[q] [µs]: 1000.0 R[thJC] [K/kW](@180° el sin) max: 8.1 T[vj] [°C] max: 125.0 Clamping force [kn] max: 65.0

T3800N18TOFVT


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 1800 V phase control thyristor disc

Clamping force [kn] max: 95.0 Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 111mm height 26mm / Ceramic I[TAVM]: 3800 (180° el sin) I[TAVM]/T[C] [A/°C](@180° el sin): 3800/85 I[TSM]: 53000.0A I[TSM] [A](@10ms, Tvj max): 53000.0 R[thJC] [K/kW](@180° el sin) max: 8.5 T[vj] [°C] max: 135.0 V[DRM] / V[RRM] [V]: 1800.0 V[DRM]/ V[RRM (V)]: 1800.0V V[T]/I[T] [V/kA]: 1.28/6.0 (@Tvj max) t[q] [µs]: 250.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 14045.0

T1900N16TOFVT


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 1600 V phase control thyristor disc

Clamping force [kn] max: 56.0 Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 75mm height 26mm / Ceramic I[TAVM]: 1810 (180° el sin) I[TAVM]/T[C] [A/°C](@180° el sin): 1810/85 I[TSM] [A](@10ms, Tvj max): 30700.0 I[TSM]: 30700.0A R[thJC] [K/kW](@180° el sin) max: 18.4 T[vj] [°C] max: 135.0 V[DRM] / V[RRM] [V]: 1600.0 V[DRM]/ V[RRM (V)]: 1600.0V V[T]/I[T] [V/kA]: 1.1/1.8 (@Tvj max) t[q] [µs]: 270.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 4713.0

T3800N16TOFVT


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 1600 V phase control thyristor disc

Clamping force [kn] max: 95.0 Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 111mm height 26mm / Ceramic I[TAVM]: 3800 (180° el sin) I[TAVM]/T[C] [A/°C](@180° el sin): 3800/85 I[TSM]: 53000.0A I[TSM] [A](@10ms, Tvj max): 53000.0 R[thJC] [K/kW](@180° el sin) max: 8.5 T[vj] [°C] max: 135.0 V[DRM] / V[RRM] [V]: 1600.0 V[DRM]/ V[RRM (V)]: 1600.0V V[T]/I[T] [V/kA]: 1.28/6.0 (@Tvj max) t[q] [µs]: 250.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 14045.0

T1900N18TOFVT


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 1800 V phase control thyristor disc

Clamping force [kn] max: 56.0 Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 75mm height 26mm / Ceramic I[TAVM]: 1810 (180° el sin) I[TAVM]/T[C] [A/°C](@180° el sin): 1810/85 I[TSM] [A](@10ms, Tvj max): 30700.0 I[TSM]: 30700.0A R[thJC] [K/kW](@180° el sin) max: 18.4 T[vj] [°C] max: 135.0 V[DRM] / V[RRM] [V]: 1800.0 V[DRM]/ V[RRM (V)]: 1800.0V V[T]/I[T] [V/kA]: 1.1/1.8 (@Tvj max) t[q] [µs]: 270.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 4713.0
V[DRM]/ V[RRM (V)]: 2600.0V I[TSM]: 28000.0A I[TAVM]: 1590 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 100mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 2600.0 I[TAVM]/T[C] [A/°C](@180° el sin): 1590/85 I[TSM] [A](@10ms, Tvj max): 28000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 3920.0 V[T]/I[T] [V/kA](@Tvj max): 2.45/5.0 V[T0] [V](@T[vj max]) max: 1.1 r[T] [mΩ](@T[vj max]) max: 0.237 t[q] [µs]: 400.0 R[thJC] [K/kW](@180° el sin) max: 12.5 T[vj] [°C] max: 125.0 Clamping force [kn] max: 65.0