V[DRM]/ V[RRM (V)]: 1800.0V I[TSM]: 4600.0A I[TAVM]: 433 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 42mm height 14mm / Ceramic V[DRM] / V[RRM] [V]: 1800.0 I[TAVM]/T[C] [A/°C](@180° el sin): 433/85 I[TSM] [A](@10ms, Tvj max): 4600.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 106.0 V[T]/I[T] [V/kA](@Tvj max): 2.07/1.2 V[T0] [V](@T[vj max]) max: 0.85 r[T] [mΩ](@T[vj max]) max: 0.9 t[q] [µs]: 250.0 R[thJC] [K/kW](@180° el sin) max: 51.0 T[vj] [°C] max: 125.0 Clamping force [kn] max: 8.0
V[DRM]/ V[RRM (V)]: 1600.0V I[TSM]: 4250.0A I[TAVM]: 381 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 42mm height 14mm / Ceramic V[DRM] / V[RRM] [V]: 1600.0 I[TAVM]/T[C] [A/°C](@180° el sin): 381/85 I[TSM] [A](@10ms, Tvj max): 4250.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 91.0 V[T]/I[T] [V/kA](@Tvj max): 2.00/1.1 V[T0] [V](@T[vj max]) max: 0.85 r[T] [mΩ](@T[vj max]) max: 0.9 t[q] [µs]: 200.0 R[thJC] [K/kW](@180° el sin) max: 62.0 T[vj] [°C] max: 125.0 Clamping force [kn] max: 6.0

T740N26TOF


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 2600 V phase control thyristor disc

V[DRM]/ V[RRM (V)]: 2600.0V I[TSM]: 11500.0A I[TAVM]: 727 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 58mm height 14mm / Ceramic V[DRM] / V[RRM] [V]: 2600.0 I[TAVM]/T[C] [A/°C](@180° el sin): 745/85 I[TSM] [A](@10ms, Tvj max): 11500.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 660.0 V[T]/I[T] [V/kA](@Tvj max): 2.53/2.85 V[T0] [V](@T[vj max]) max: 1.0 r[T] [mΩ](@T[vj max]) max: 0.5 t[q] [µs]: 300.0 R[thJC] [K/kW](@180° el sin) max: 28.0 T[vj] [°C] max: 125.0 Clamping force [kn] max: 21.0
V[DRM]/ V[RRM (V)]: 1400.0V I[TSM]: 4250.0A I[TAVM]: 381 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 42mm height 14mm / Ceramic V[DRM] / V[RRM] [V]: 1400.0 I[TAVM]/T[C] [A/°C](@180° el sin): 381/85 I[TSM] [A](@10ms, Tvj max): 4250.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 91.0 V[T]/I[T] [V/kA](@Tvj max): 2.00/1.1 V[T0] [V](@T[vj max]) max: 0.85 r[T] [mΩ](@T[vj max]) max: 0.9 t[q] [µs]: 200.0 R[thJC] [K/kW](@180° el sin) max: 62.0 T[vj] [°C] max: 125.0 Clamping force [kn] max: 6.0

T1400N16H75VT


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 1600 V phase control thyristor disc

Clamping force [kn] max: 56.0 Configuration: Electrical Triggered Phase Control Thyristor I[TAVM]: 1410 (180 ° el sin) I[TAVM]/T[C] [A/°C](@180° el sin): 1410/85 R[thJC] [K/kW](@180° el sin) max: 18.5 T[vj] [°C] max: 125.0 V[DRM] / V[RRM] [V]: 1600.0 V[DRM]/ V[RRM (V)]: 1600.0V V[T0] [V](@T[vj max]) max: 0.8 V[T]/I[T] [V/kA](@Tvj max): 1.43/3.0 r[T] [mΩ](@T[vj max]) max: 0.21 t[q] [µs]: 230.0 ∫I2dt [A²s · 103]: 4351.0 Housing: Disc dia 75mm height 26mm / Ceramic I[TSM] [A](@10ms, Tvj max): 29500.0

65DN06B02


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 600 V Housingless Welding Diode

Clamping force [kn] max: 80.0 Configuration: Rectifier Diodes / Welding Diodes Housing: Disc dia 65mm height 5,0 mm I[(FSM)] max: 95000.0A I[FAVM]/T[C] [A/°C](@180° el sin): 12810/100 I[FAVM]/T[c]: 12810/100 (180 ° el sin) I[FSM] [A](@10ms, Tvj max): 95000.0 R[thJC] [K/kW](@180° el sin) max: 4.7 T[vj] [°C] max: 180.0 V[RRM] max: 600.0V V[F]/I[F] [V/kA](@Tvj max): 0.89/8 V[RRM] [V]: 600.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 45100.0 V[T0] [V](@T[vj max]) max: 0.76 r[T] [mΩ](@T[vj max]) max: 0.18

T1700N16H75VT


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 1600 V phase control thyristor disc

Clamping force [kn] max: 56.0 Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 75mm height 26mm / Ceramic I[TAVM]: 1770 (180 ° el sin) I[TAVM]/T[C] [A/°C](@180° el sin): 1770/85 I[TSM]: 28000.0A I[TSM] [A](@10ms, Tvj max): 28000.0 R[thJC] [K/kW](@180° el sin) max: 18.5 T[vj] [°C] max: 135.0 V[DRM] / V[RRM] [V]: 1600.0 V[DRM]/ V[RRM (V)]: 1600.0V V[T0] [V](@T[vj max]) max: 0.8 V[T]/I[T] [V/kA](@Tvj max): 1.30/3.0 r[T] [mΩ](@T[vj max]) max: 0.167 t[q] [µs]: 230.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 3920.0

56DN06B02


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 600 V Housingless Welding Diode

Clamping force [kn] max: 45.0 Configuration: Rectifier Diodes / Welding Diodes Housing: Disc dia 56mm height 5,0 mm I[(FSM)] max: 70000.0A I[FAVM]/T[C] [A/°C](@180° el sin): 10300/100 I[FAVM]/T[c]: 10300/100 (180 ° el sin) I[FSM] [A](@10ms, Tvj max): 70000.0 R[thJC] [K/kW](@180° el sin) max: 5.8 T[vj] [°C] max: 180.0 V[RRM] max: 600.0V V[F]/I[F] [V/kA](@Tvj max): 0.94/8 V[RRM] [V]: 600.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 24500.0 V[T0] [V](@T[vj max]) max: 0.73 r[T] [mΩ](@T[vj max]) max: 0.24
V[DRM]/ V[RRM (V)]: 2800.0V I[TSM]: 28000.0A I[TAVM]: 1590 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 100mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 2800.0 I[TAVM]/T[C] [A/°C](@180° el sin): 1590/85 I[TSM] [A](@10ms, Tvj max): 28000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 3920.0 V[T]/I[T] [V/kA](@Tvj max): 2.45/5.0 V[T0] [V](@T[vj max]) max: 1.1 r[T] [mΩ](@T[vj max]) max: 0.237 t[q] [µs]: 400.0 R[thJC] [K/kW](@180° el sin) max: 12.5 T[vj] [°C] max: 125.0 Clamping force [kn] max: 65.0

T1500N18TOFVT


数据:
分类: 半导体分立器件和附件 / 闸流晶体管

描述: 1800 V phase control thyristor disc

V[DRM]/ V[RRM (V)]: 1800.0V I[TSM]: 33500.0A I[TAVM]: 1500 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 75mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 1800.0 I[TAVM]/T[C] [A/°C](@180° el sin): 1500/85 I[TSM] [A](@10ms, Tvj max): 33500.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 5611.0 V[T]/I[T] [V/kA](@Tvj max): 2.10/7.0 V[T0] [V](@T[vj max]): 0.9 r[T] [mΩ](@T[vj max]): 0.15 t[q] [µs]: 240.0 R[thJC] [K/kW](@180° el sin) max: 18.4 T[vj] [°C] max: 125.0 Clamping force [kn] max: 56.0