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TLE9012DQU

数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路

描述: Li-Ion battery monitoring and balancing system IC

Voltage Measurement Channels: 12.0 Temperature Measurement Channels: 5.0 Voltage Class: 75.0V Cell Voltage: NoneV Balancing Current: NonemA Isolated Communication Interface: iso UART Non-isolated Communication Interface: UART Standby Current: 2.5 µA ESD Protection: 4.0kV Tj: None°C Classification: ISO 26262-compliant

BSP76

数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路

描述: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.

EAS/Avalanche Energy: 150.0mJ I[D ]: 1.4A I[D(lim)] min: 5.0A I[L(LIM)] min: 5.0A Mounting: SMT P[tot] max: 3.8W V[DS] max: 42.0V Load Current: 1.8A Control Interface: Discrete I[L(nom)]: 1.4A Operating Temperature max: 150.0°C E[AS](Energy capability): 150.0mJ t[off](Turn OFF time) max: 100.0µs t[on](Turn ON time) max: 100.0µs Family: Classic HITFET™ Classification: - Channels: 1.0 R[DS (on)](@ Tj = 25°C): 190.0mΩ R[DS (on)](@ Tj = 150°C) max: 480.0mΩ Diagnostics: - 更多

Protection strategy: Auto-restart Nominal Load Current per channel: 1.4A I[L](Short Circuit Current): 5.0A Recommended Operating Voltage max: 42.0V Currently planned availability until at least: 2038

BTS3118D

数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路

EAS/Avalanche Energy: 2000.0mJ I[D ]: 2.4A I[D(lim)] min: 15.0A Load Current: 2.4A Mounting: SMT P[tot] max: 21.0W V[DS] max: 42.0V Control Interface: Discrete I[L(nom)]: 2.4A Recommended Operating Voltage max: 42.0V Operating Temperature max: 150.0°C E[AS](Energy capability): 2000.0mJ t[off](Turn OFF time) max: 100.0µs t[on](Turn ON time) max: 100.0µs Classification: - Channels: 1.0 R[DS (on)](@ Tj = 25°C): 90.0mΩ R[DS (on)](@ Tj = 150°C) max: 240.0mΩ Diagnostics: - Protection strategy: Latch 更多

Nominal Load Current per channel: 2.4A I[L](Short Circuit Current): 10.0A Family: Classic HITFET™ 12V Currently planned availability until at least: 2038

BSP77E6433

数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路

描述: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.

EAS/Avalanche Energy: 250.0mJ I[D ]: 2.17A I[D(lim)] min: 10.0A I[L(LIM)] min: 10.0A Mounting: SMT P[tot] max: 3.8W V[DS] max: 42.0V Load Current: 2.8A Control Interface: Discrete I[L(nom)]: 2.17A Operating Temperature max: 150.0°C E[AS](Energy capability): 250.0mJ t[off](Turn OFF time) max: 100.0µs t[on](Turn ON time) max: 100.0µs Classification: - Channels: 1.0 R[DS (on)](@ Tj = 25°C): 90.0mΩ R[DS (on)](@ Tj = 150°C) max: 240.0mΩ Diagnostics: - Protection strategy: Auto-restart 更多

Nominal Load Current per channel: 2.17A I[L](Short Circuit Current): 10.0A Recommended Operating Voltage max: 42.0V Family: Classic HITFET™ 12V Currently planned availability until at least: 2038

BSP78

数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路

描述: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions

EAS/Avalanche Energy: 500.0mJ I[D ]: 3.0A I[D(lim)] min: 18.0A I[L(LIM)] min: 18.0A Mounting: SMT P[tot] max: 3.8W V[DS] max: 42.0V Load Current: 4.0A Control Interface: Discrete I[L(nom)]: 3.0A Operating Temperature max: 150.0°C E[AS](Energy capability): 500.0mJ t[off](Turn OFF time) max: 100.0µs t[on](Turn ON time) max: 100.0µs Classification: - Channels: 1.0 R[DS (on)](@ Tj = 25°C): 35.0mΩ R[DS (on)](@ Tj = 150°C) max: 90.0mΩ Diagnostics: - Protection strategy: Auto-restart 更多

Nominal Load Current per channel: 3.0A I[L](Short Circuit Current): 18.0A Recommended Operating Voltage max: 42.0V Family: Classic HITFET™ 12V Currently planned availability until at least: 2038

BTS118D

数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路

描述: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.

EAS/Avalanche Energy: 2000.0mJ I[D ]: 2.4A I[D(lim)] min: 15.0A I[L(LIM)] min: 15.0A Mounting: SMT P[tot] max: 21.0W V[DS] max: 42.0V Load Current: 3.2A Control Interface: Discrete I[L(nom)]: 2.4A Operating Temperature max: 150.0°C E[AS](Energy capability): 2000.0mJ t[off](Turn OFF time) max: 100.0µs t[on](Turn ON time) max: 100.0µs Classification: - Channels: 1.0 R[DS (on)](@ Tj = 25°C): 90.0mΩ R[DS (on)](@ Tj = 150°C) max: 240.0mΩ Diagnostics: - Protection strategy: Latch 更多

Nominal Load Current per channel: 2.4A I[L](Short Circuit Current): 15.0A Recommended Operating Voltage max: 42.0V Family: Classic HITFET™ 12V Currently planned availability until at least: 2038

BTS142D

数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路

描述: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.

EAS/Avalanche Energy: 3500.0mJ I[D ]: 4.6A I[D(lim)] min: 30.0A I[L(LIM)] min: 30.0A Mounting: SMT P[tot] max: 178.0W V[DS] max: 42.0V Load Current: 5.5A Control Interface: Discrete I[L(nom)]: 4.6A Operating Temperature max: 150.0°C E[AS](Energy capability): 3500.0mJ t[off](Turn OFF time) max: 170.0µs t[on](Turn ON time) max: 100.0µs Classification: - Channels: 1.0 R[DS (on)](@ Tj = 25°C): 27.0mΩ R[DS (on)](@ Tj = 150°C) max: 68.0mΩ Diagnostics: - Protection strategy: Latch 更多

Nominal Load Current per channel: 4.6A I[L](Short Circuit Current): 30.0A Recommended Operating Voltage max: 42.0V Family: Classic HITFET™ 12V Currently planned availability until at least: 2038

BTS3110N

数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路

描述: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.

EAS/Avalanche Energy: 150.0mJ I[D ]: 1.4A I[D(lim)] min: 5.0A Load Current: 1.4A Mounting: SMT P[tot] max: 3.8W V[DS] max: 42.0V Control Interface: Discrete I[L(nom)]: 1.4A Recommended Operating Voltage max: 42.0V Operating Temperature max: 150.0°C E[AS](Energy capability): 150.0mJ t[off](Turn OFF time) max: 100.0µs t[on](Turn ON time) max: 100.0µs Classification: - Channels: 1.0 R[DS (on)](@ Tj = 25°C): 190.0mΩ R[DS (on)](@ Tj = 150°C) max: 480.0mΩ Diagnostics: - Protection strategy: Latch 更多

Nominal Load Current per channel: 1.4A I[L](Short Circuit Current): 5.0A Family: Classic HITFET™ 12V Currently planned availability until at least: 2038

BTS3118N

数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路

描述: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions

EAS/Avalanche Energy: 250.0mJ I[D ]: 2.17A I[D(lim)] min: 10.0A Load Current: 2.17A Mounting: SMT P[tot] max: 3.8W V[DS] max: 42.0V Control Interface: Discrete I[L(nom)]: 2.17A Recommended Operating Voltage max: 42.0V Operating Temperature max: 150.0°C E[AS](Energy capability): 250.0mJ t[off](Turn OFF time) max: 100.0µs t[on](Turn ON time) max: 100.0µs Classification: - Channels: 1.0 R[DS (on)](@ Tj = 25°C): 90.0mΩ R[DS (on)](@ Tj = 150°C) max: 240.0mΩ Diagnostics: - Protection strategy: Latch 更多

Nominal Load Current per channel: 2.17A I[L](Short Circuit Current): 10.0A Family: Classic HITFET™ 12V Currently planned availability until at least: 2038

BTS3142D

数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路

EAS/Avalanche Energy: 3500.0mJ I[D ]: 4.6A I[D(lim)] min: 24.0A Load Current: 4.6A Mounting: SMT P[tot] max: 59.0W V[DS] max: 42.0V Control Interface: Discrete I[L(nom)]: 4.6A Recommended Operating Voltage max: 42.0V Operating Temperature max: 150.0°C E[AS](Energy capability): 3500.0mJ t[off](Turn OFF time) max: 120.0µs t[on](Turn ON time) max: 120.0µs Classification: - Channels: 1.0 R[DS (on)](@ Tj = 25°C): 27.0mΩ R[DS (on)](@ Tj = 150°C) max: 68.0mΩ Diagnostics: - Protection strategy: Latch 更多

Nominal Load Current per channel: 4.6A I[L](Short Circuit Current): 30.0A Family: Classic HITFET™ 12V Currently planned availability until at least: 2038