Output swing headroom (to positive supply) (typ) (V): -0.02 THD + N at 1 kHz (typ) (%): 0.00006 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.003 GBW (typ) (MHz): 14 Features: EMI Hardened, High Cload Drive, MUX Friendly, Zero Drift Slew rate (typ) (V/µs): 20 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 0.005 Iq per channel (typ) (mA): 1.3 Vn at 1 kHz (typ) (nV√Hz): 5.2 CMRR (typ) (dB): 168 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 300 Iout (typ) (A): 0.065 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -2.5 Output swing headroom (to negative supply) (typ) (V): 0.02 Output swing headroom (to positive supply) (typ) (V): -0.02 THD + N at 1 kHz (typ) (%): 0.00006

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.4 Rail-to-rail: In, Out GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 6.5 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.6 Vn at 1 kHz (typ) (nV√Hz): 8.7 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1.1 Features: EMI Hardened CMRR (typ) (dB): 103 Iout (typ) (A): 0.05 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.015 Output swing headroom (to positive supply) (typ) (V): -0.015

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 6.5 Vos (offset voltage at 25°C) (max) (mV): 1.6 Iq per channel (typ) (mA): 0.538 Vn at 1 kHz (typ) (nV√Hz): 16 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.53 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 103 Iout (typ) (A): 0.05 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.02 Output swing headroom (to positive supply) (typ) (V): -0.02

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Rail-to-rail: In, Out GBW (typ) (MHz): 8 Slew rate (typ) (V/µs): 6.5 Vos (offset voltage at 25°C) (max) (mV): 1.5 Iq per channel (typ) (mA): 0.6 Vn at 1 kHz (typ) (nV√Hz): 18 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.53 Features: EMI Hardened CMRR (typ) (dB): 103 Iout (typ) (A): 0.05 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.015 Output swing headroom (to positive supply) (typ) (V): -0.015

Output swing headroom (to positive supply) (typ) (V): -0.65 THD + N at 1 kHz (typ) (%): 0.0002 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.2 GBW (typ) (MHz): 1 Features: Cost Optimized, High Cload Drive, Super Beta Slew rate (typ) (V/µs): 0.35 Rail-to-rail: No Offset drift (typ) (µV/°C): 0.5 Iq per channel (typ) (mA): 0.58 Vn at 1 kHz (typ) (nV√Hz): 9 CMRR (typ) (dB): 148 Rating: Catalog Operating temperature range (°C): -40 to 120 Input bias current (max) (pA): 2000 Iout (typ) (A): 0.035 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 1.5 Input common mode headroom (to positive supply) (typ) (V): -1.5 Output swing headroom (to negative supply) (typ) (V): 0.65 Output swing headroom (to positive supply) (typ) (V): -0.65 THD + N at 1 kHz (typ) (%): 0.0002

2nd harmonic (dBc): -75 3rd harmonic (dBc): -83 Frequency of harmonic distortion measurement (MHz): 1 Architecture: FET / CMOS Input, Voltage FB Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 100 BW at Acl (MHz): 250 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 150 Vn at flatband (typ) (nV√Hz): 7.5 Vn at 1 kHz (typ) (nV√Hz): 7.5 Iq per channel (typ) (mA): 5.2 Vos (offset voltage at 25°C) (max) (mV): 10 Rail-to-rail: In, Out Features: EMI Hardened Rating: Automotive Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 80 Input bias current (max) (pA): 20 Offset drift (typ) (µV/°C): 4.5 Iout (typ) (mA): 100 2nd harmonic (dBc): -75 3rd harmonic (dBc): -83 Frequency of harmonic distortion measurement (MHz): 1

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.25 Rail-to-rail: Out GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 4.75 Vos (offset voltage at 25°C) (max) (mV): 1 Iq per channel (typ) (mA): 0.85 Vn at 1 kHz (typ) (nV√Hz): 5 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.35 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 120 Iout (typ) (A): 0.05 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -1.2 Output swing headroom (to negative supply) (typ) (V): 0.008 Output swing headroom (to positive supply) (typ) (V): -0.008

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 3.6 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.7 Rail-to-rail: In, Out GBW (typ) (MHz): 0.008 Slew rate (typ) (V/µs): 0.0035 Vos (offset voltage at 25°C) (max) (mV): 3.1 Iq per channel (typ) (mA): 0.0005 Vn at 1 kHz (typ) (nV√Hz): 264 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.8 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 80 Iout (typ) (A): 0.015 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0.00064 Input common mode headroom (to positive supply) (typ) (V): 0.0005 Output swing headroom (to negative supply) (typ) (V): 0.012 Output swing headroom (to positive supply) (typ) (V): -0.012

2nd harmonic (dBc): 120 3rd harmonic (dBc): 145 Frequency of harmonic distortion measurement (MHz): 0.1 Architecture: Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.4 GBW (typ) (MHz): 50 BW at Acl (MHz): 105 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 105 Vn at flatband (typ) (nV√Hz): 4.7 Vn at 1 kHz (typ) (nV√Hz): 4.7 Iq per channel (typ) (mA): 0.592 Vos (offset voltage at 25°C) (max) (mV): 0.165 Rail-to-rail: In to V-, Out Features: Shutdown Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 110 Input bias current (max) (pA): 520000 Offset drift (typ) (µV/°C): 0.4 Iout (typ) (mA): 50 2nd harmonic (dBc): 120 3rd harmonic (dBc): 145 Frequency of harmonic distortion measurement (MHz): 0.1

2nd harmonic (dBc): -110 3rd harmonic (dBc): -120 Frequency of harmonic distortion measurement (MHz): 1 Architecture: Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.4 GBW (typ) (MHz): 300 BW at Acl (MHz): 90 Acl, min spec gain (V/V): 6 Slew rate (typ) (V/µs): 350 Vn at flatband (typ) (nV√Hz): 1.8 Vn at 1 kHz (typ) (nV√Hz): 1.8 Iq per channel (typ) (mA): 0.96 Vos (offset voltage at 25°C) (max) (mV): 0.125 Rail-to-rail: In to V-, Out Features: Decompensated, Shutdown Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 105 Input bias current (max) (pA): 4400000 Offset drift (typ) (µV/°C): 0.4 Iout (typ) (mA): 20 2nd harmonic (dBc): -110 3rd harmonic (dBc): -120 Frequency of harmonic distortion measurement (MHz): 1