Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Vos (offset voltage at 25°C) (max) (mV): 0.1 GBW (typ) (MHz): 1 Features: Cost Optimized, EMI Hardened Slew rate (typ) (V/µs): 0.4 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 0.9 Iq per channel (typ) (mA): 0.93 Vn at 1 kHz (typ) (nV√Hz): 19 CMRR (typ) (dB): 120 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.017 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 0.12 Output swing headroom (to positive supply) (typ) (V): -0.12

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 1.5 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.15 Vn at 1 kHz (typ) (nV√Hz): 16 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 96 Iout (typ) (A): 0.02 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.005 Output swing headroom (to positive supply) (typ) (V): -0.005

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 6 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.4 Vn at 1 kHz (typ) (nV√Hz): 12 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 90 Iout (typ) (A): 0.05 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.005 Output swing headroom (to positive supply) (typ) (V): -0.005

Output swing headroom (to positive supply) (typ) (V): -0.05 THD + N at 1 kHz (typ) (%): 0.0012 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.1 GBW (typ) (MHz): 2.5 Features: EMI Hardened, High Cload Drive Slew rate (typ) (V/µs): 5.5 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.5 Iq per channel (typ) (mA): 0.14 Vn at 1 kHz (typ) (nV√Hz): 15 CMRR (typ) (dB): 140 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 20 Iout (typ) (A): 0.065 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.05 Output swing headroom (to positive supply) (typ) (V): -0.05 THD + N at 1 kHz (typ) (%): 0.0012

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.4 Rail-to-rail: In, Out GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 6.5 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.6 Vn at 1 kHz (typ) (nV√Hz): 8.7 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1.1 Features: EMI Hardened CMRR (typ) (dB): 103 Iout (typ) (A): 0.05 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.015 Output swing headroom (to positive supply) (typ) (V): -0.015

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Rail-to-rail: In, Out GBW (typ) (MHz): 8 Slew rate (typ) (V/µs): 6.5 Vos (offset voltage at 25°C) (max) (mV): 1.5 Iq per channel (typ) (mA): 0.6 Vn at 1 kHz (typ) (nV√Hz): 18 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.53 Features: EMI Hardened CMRR (typ) (dB): 103 Iout (typ) (A): 0.05 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.015 Output swing headroom (to positive supply) (typ) (V): -0.015

Output swing headroom (to positive supply) (typ) (V): -0.05 THD + N at 1 kHz (typ) (%): 0.0012 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.1 GBW (typ) (MHz): 2.5 Features: EMI Hardened, High Cload Drive Slew rate (typ) (V/µs): 5.5 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.5 Iq per channel (typ) (mA): 0.14 Vn at 1 kHz (typ) (nV√Hz): 15 CMRR (typ) (dB): 140 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 20 Iout (typ) (A): 0.065 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.05 Output swing headroom (to positive supply) (typ) (V): -0.05 THD + N at 1 kHz (typ) (%): 0.0012

Output swing headroom (to positive supply) (typ) (V): -0.05 THD + N at 1 kHz (typ) (%): 0.0012 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.1 GBW (typ) (MHz): 2.5 Features: EMI Hardened, High Cload Drive Slew rate (typ) (V/µs): 5.5 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.5 Iq per channel (typ) (mA): 0.14 Vn at 1 kHz (typ) (nV√Hz): 15 CMRR (typ) (dB): 140 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 20 Iout (typ) (A): 0.065 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.05 Output swing headroom (to positive supply) (typ) (V): -0.05 THD + N at 1 kHz (typ) (%): 0.0012

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 4.9 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 1.8 Vn at 1 kHz (typ) (nV√Hz): 8.5 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.6 Input bias current (max) (pA): 260000 CMRR (typ) (dB): 88 Iout (typ) (A): 0.015 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): -0.3 Input common mode headroom (to positive supply) (typ) (V): -0.9 Output swing headroom (to negative supply) (typ) (V): 0.076 Output swing headroom (to positive supply) (typ) (V): -0.048

Vn at 1 kHz (typ) (nV√Hz): 5.1 Features: Burr-Brown™ Audio, Premium Sound THD + N at 1 kHz (typ) (%): 0.00005 Rating: Automotive Operating temperature range (°C): -40 to 125 Architecture: FET CMRR (typ) (dB): 126 Input bias current (max) (pA): 20