Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 10 Vos (offset voltage at 25°C) (max) (mV): 1 Iq per channel (typ) (mA): 1.6 Vn at 1 kHz (typ) (nV√Hz): 7 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.3 Input bias current (max) (pA): 15 CMRR (typ) (dB): 120 Iout (typ) (A): 0.075 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01

THD + N at 1 kHz (typ) (%): 0.0001 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.15 GBW (typ) (MHz): 5.5 Slew rate (typ) (V/µs): 20 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 0.4 Iq per channel (typ) (mA): 0.445 Vn at 1 kHz (typ) (nV√Hz): 7 CMRR (typ) (dB): 140 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 10 Iout (typ) (A): 0.02 Architecture: FET Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -3.5 Output swing headroom (to negative supply) (typ) (V): 0.1 Output swing headroom (to positive supply) (typ) (V): -0.1 THD + N at 1 kHz (typ) (%): 0.0001

Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 6.5 Vos (offset voltage at 25°C) (max) (mV): 1.6 Iq per channel (typ) (mA): 0.538 Vn at 1 kHz (typ) (nV√Hz): 16 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.53 Features: Cost Optimized, EMI Hardened, Shutdown, Small Size CMRR (typ) (dB): 103 Iout (typ) (A): 0.05 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.02 Output swing headroom (to positive supply) (typ) (V): -0.02

Output swing headroom (to positive supply) (typ) (V): -0.25 THD + N at 1 kHz (typ) (%): 0.0001 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Vos (offset voltage at 25°C) (max) (mV): 0.075 GBW (typ) (MHz): 2 Features: EMI Hardened, Zero Drift Slew rate (typ) (V/µs): 0.8 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 0.1 Iq per channel (typ) (mA): 0.45 Vn at 1 kHz (typ) (nV√Hz): 10 CMRR (typ) (dB): 114 Rating: Automotive Operating temperature range (°C): -40 to 105 Input bias current (max) (pA): 1000 Iout (typ) (A): 0.018 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -1.5 Output swing headroom (to negative supply) (typ) (V): 0.25 Output swing headroom (to positive supply) (typ) (V): -0.25 THD + N at 1 kHz (typ) (%): 0.0001

Output swing headroom (to positive supply) (typ) (V): -0.25 THD + N at 1 kHz (typ) (%): 0.0001 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Vos (offset voltage at 25°C) (max) (mV): 0.075 GBW (typ) (MHz): 2 Features: EMI Hardened, Zero Drift Slew rate (typ) (V/µs): 0.8 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 0.1 Iq per channel (typ) (mA): 0.45 Vn at 1 kHz (typ) (nV√Hz): 10 CMRR (typ) (dB): 114 Rating: Automotive Operating temperature range (°C): -40 to 105 Input bias current (max) (pA): 1700 Iout (typ) (A): 0.018 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -1.5 Output swing headroom (to negative supply) (typ) (V): 0.25 Output swing headroom (to positive supply) (typ) (V): -0.25 THD + N at 1 kHz (typ) (%): 0.0001

Output swing headroom (to positive supply) (typ) (V): -0.01 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 20 Slew rate (typ) (V/µs): 10 Vos (offset voltage at 25°C) (max) (mV): 2 Iq per channel (typ) (mA): 1.6 Vn at 1 kHz (typ) (nV√Hz): 8.5 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1.8 Features: Zero Crossover Input bias current (max) (pA): 800 CMRR (typ) (dB): 100 Iout (typ) (A): 0.065 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01

Output swing headroom (to positive supply) (typ) (V): -0.22 THD + N at 1 kHz (typ) (%): 0.0001 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Vos (offset voltage at 25°C) (max) (mV): 0.025 GBW (typ) (MHz): 2 Features: EMI Hardened, Zero Drift Slew rate (typ) (V/µs): 0.8 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 0.03 Iq per channel (typ) (mA): 0.45 Vn at 1 kHz (typ) (nV√Hz): 8.8 CMRR (typ) (dB): 126 Rating: Automotive Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 1400 Iout (typ) (A): 0.018 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -1.5 Output swing headroom (to negative supply) (typ) (V): 0.22 Output swing headroom (to positive supply) (typ) (V): -0.22 THD + N at 1 kHz (typ) (%): 0.0001

Output swing headroom (to positive supply) (typ) (V): -0.22 THD + N at 1 kHz (typ) (%): 0.0001 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4 Vos (offset voltage at 25°C) (max) (mV): 0.025 GBW (typ) (MHz): 2 Features: EMI Hardened, Zero Drift Slew rate (typ) (V/µs): 0.8 Rail-to-rail: In to V-, Out Offset drift (typ) (µV/°C): 0.03 Iq per channel (typ) (mA): 0.45 Vn at 1 kHz (typ) (nV√Hz): 8.8 CMRR (typ) (dB): 126 Rating: Automotive Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 1400 Iout (typ) (A): 0.018 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -1.5 Output swing headroom (to negative supply) (typ) (V): 0.22 Output swing headroom (to positive supply) (typ) (V): -0.22 THD + N at 1 kHz (typ) (%): 0.0001

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 1.5 Vos (offset voltage at 25°C) (max) (mV): 2.7 Iq per channel (typ) (mA): 0.525 Vn at 1 kHz (typ) (nV√Hz): 16 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1 Features: Cost Optimized, EMI Hardened, High Cload Drive CMRR (typ) (dB): 120 Iout (typ) (A): 0.025 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 0.09 Output swing headroom (to positive supply) (typ) (V): -0.16

Output swing headroom (to positive supply) (typ) (V): -0.15 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 1.2 Slew rate (typ) (V/µs): 0.4 Vos (offset voltage at 25°C) (max) (mV): 1.8 Iq per channel (typ) (mA): 0.1 Vn at 1 kHz (typ) (nV√Hz): 19 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.3 Features: EMI Hardened Input bias current (max) (pA): 15 CMRR (typ) (dB): 120 Iout (typ) (A): 0.017 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 0.008 Output swing headroom (to positive supply) (typ) (V): -0.15