THD + N at 1 kHz (typ) (%): 0.0005 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2 Vos (offset voltage at 25°C) (max) (mV): 0.125 GBW (typ) (MHz): 5.5 Features: Cost Optimized Slew rate (typ) (V/µs): 2 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 1 Iq per channel (typ) (mA): 0.815 Vn at 1 kHz (typ) (nV√Hz): 8 CMRR (typ) (dB): 88 Rating: Catalog Operating temperature range (°C): -40 to 125 Iout (typ) (A): 0.03 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.0005

Slew rate (typ) (V/µs): 9 Rail-to-rail: Out Vos (offset voltage at 25°C) (max) (mV): 2 Iq per channel (typ) (mA): 2 Vn at 1 kHz (typ) (nV√Hz): 4.5 Features: Small Size THD + N at 1 kHz (typ) (%): 0.0001 Rating: Catalog Operating temperature range (°C): -40 to 85 Iout (typ) (A): 0.05 Architecture: CMOS CMRR (typ) (dB): 110

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 3.6 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.7 Rail-to-rail: In, Out GBW (typ) (MHz): 0.008 Slew rate (typ) (V/µs): 0.0035 Vos (offset voltage at 25°C) (max) (mV): 3.1 Iq per channel (typ) (mA): 0.0005 Vn at 1 kHz (typ) (nV√Hz): 264 Rating: Catalog Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.8 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 75 Iout (typ) (A): 0.015 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0.00064 Input common mode headroom (to positive supply) (typ) (V): 0.0005 Output swing headroom (to negative supply) (typ) (V): 0.012 Output swing headroom (to positive supply) (typ) (V): -0.012

Slew rate (typ) (V/µs): 9 Rail-to-rail: Out Vos (offset voltage at 25°C) (max) (mV): 2 Iq per channel (typ) (mA): 2 Vn at 1 kHz (typ) (nV√Hz): 4.5 Features: Small Size THD + N at 1 kHz (typ) (%): 0.0001 Rating: Catalog Operating temperature range (°C): -40 to 85 Iout (typ) (A): 0.05 Architecture: CMOS CMRR (typ) (dB): 110

Output swing headroom (to positive supply) (typ) (V): -0.05 THD + N at 1 kHz (typ) (%): 0.0012 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.025 GBW (typ) (MHz): 2.5 Features: EMI Hardened, High Cload Drive, Small Size Slew rate (typ) (V/µs): 5.5 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.1 Iq per channel (typ) (mA): 0.14 Vn at 1 kHz (typ) (nV√Hz): 15 CMRR (typ) (dB): 140 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 20 Iout (typ) (A): 0.065 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.05 Output swing headroom (to positive supply) (typ) (V): -0.05 THD + N at 1 kHz (typ) (%): 0.0012

Output swing headroom (to positive supply) (typ) (V): -0.005 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 1.8 Rail-to-rail: In, Out GBW (typ) (MHz): 10 Slew rate (typ) (V/µs): 6 Vos (offset voltage at 25°C) (max) (mV): 2.5 Iq per channel (typ) (mA): 0.4 Vn at 1 kHz (typ) (nV√Hz): 11 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 2 Features: EMI Hardened Input bias current (max) (pA): 15 CMRR (typ) (dB): 86 Iout (typ) (A): 0.05 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.2 Input common mode headroom (to positive supply) (typ) (V): 0.2 Output swing headroom (to negative supply) (typ) (V): 0.005 Output swing headroom (to positive supply) (typ) (V): -0.005

Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.00027 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2 Vos (offset voltage at 25°C) (max) (mV): 1 GBW (typ) (MHz): 5.5 Features: EMI Hardened Slew rate (typ) (V/µs): 2 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.32 Iq per channel (typ) (mA): 0.76 Vn at 1 kHz (typ) (nV√Hz): 7.5 CMRR (typ) (dB): 90 Rating: Automotive Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 10 Iout (typ) (A): 0.03 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.00027

Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.00027 Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2 Vos (offset voltage at 25°C) (max) (mV): 0.025 GBW (typ) (MHz): 5.5 Features: EMI Hardened, e-Trim™ Slew rate (typ) (V/µs): 2 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.32 Iq per channel (typ) (mA): 0.76 Vn at 1 kHz (typ) (nV√Hz): 7.5 CMRR (typ) (dB): 90 Rating: Automotive Operating temperature range (°C): -40 to 125 TI functional safety category: Functional Safety-Capable Input bias current (max) (pA): 10 Iout (typ) (A): 0.03 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.01 Output swing headroom (to positive supply) (typ) (V): -0.01 THD + N at 1 kHz (typ) (%): 0.00027

Output swing headroom (to positive supply) (typ) (V): -0.05 THD + N at 1 kHz (typ) (%): 0.0012 Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 36 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Vos (offset voltage at 25°C) (max) (mV): 0.025 GBW (typ) (MHz): 2.5 Features: EMI Hardened, High Cload Drive Slew rate (typ) (V/µs): 5.5 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.1 Iq per channel (typ) (mA): 0.14 Vn at 1 kHz (typ) (nV√Hz): 15 CMRR (typ) (dB): 140 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 20 Iout (typ) (A): 0.065 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): 0.1 Output swing headroom (to negative supply) (typ) (V): 0.05 Output swing headroom (to positive supply) (typ) (V): -0.05 THD + N at 1 kHz (typ) (%): 0.0012

Output swing headroom (to positive supply) (typ) (V): -0.07 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 3 Slew rate (typ) (V/µs): 1 Vos (offset voltage at 25°C) (max) (mV): 3 Iq per channel (typ) (mA): 0.037 Vn at 1 kHz (typ) (nV√Hz): 70 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 3.3 Features: Small Size Input bias current (max) (pA): 38000 CMRR (typ) (dB): 93 Iout (typ) (A): 0.01 Architecture: Bipolar Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -0.9 Output swing headroom (to negative supply) (typ) (V): 0.06 Output swing headroom (to positive supply) (typ) (V): -0.07