INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战：高能效、移动性和安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

BSB056N10NN3G

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数据:

P[tot] max: 78.0W

V[DS] max: 100.0V

Q[G](typ @10V): 56.0nC

I[Dpuls] max: 332.0A

R[th]: 1.6K/W

Polarity: N

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BSB165N15NZ3G

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数据:

I[Dpuls] max: 180.0A

R[th]: 1.6K/W

P[tot] max: 78.0W

V[DS] max: 150.0V

Q[G](typ @10V): 26.0nC

Polarity: N

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AIMZA75R008M1H

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数据:

简介: The CoolSiC™ Automotive MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability

Package: TO247 4-pin (asymmetric leads)

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Automotive

Technology: CoolSiC™ G1

V[DS] max: 750.0V

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IMZA75R008M1H

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数据:

简介: The CoolSiC™ MOSFET 750 V G1 is a highly robust SiC MOSFET for the best combination of system performance and reliability

Package: TO247 4-pin (asymmetric leads)

Operating Temperature max: 175.0°C

Polarity: N

Qualification: Industrial

Technology: CoolSiC™ G1

V[DS] max: 750.0V

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IMBG65R009M1H

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数据:

简介: SiC MOSFET in compact SMD package

Package: D2PAK 7-pin

Polarity: N

Qualification: Industrial

R[DS (on)](@ Tj = 25°C): 8.7mΩ

Technology: CoolSiC™ G1

V[DS] max: 650.0V

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FS03MR12A7MA2B

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数据:

简介: HybridPACK™ Drive G2 CoolSiC™: Compact 1200V/310A B6-bridge power module optimized for inverter various power classes

Configuration: Sixpack

Features: PinFin Base Plate

Features: short Tabs

Housing: HybridPACK™ Drive G2

Qualification: Automotive

Technology: CoolSiC™ G2

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IR2133J

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数据:

简介: 600 V three-phase gate driver IC with shutdown, fault reporting, OPAMP and over current protection

Input Vcc max: 20.0V

Channels: 6.0

Configuration: Three Phase

Voltage Class: 600.0V

Qualification: Industrial

Output Current(Source): 0.25A

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S28HL256TFPBHM013

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数据:

Family: HL-T

Density: 256.0MBit

Interface Frequency (SDR/DDR)(MHz): 166 / 166

Interface Bandwidth: 333.0MByte/s

Interfaces: Octal

Qualification: Automotive

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S28HL256TFPBHM010

分类:
数据:

Family: HL-T

Density: 256.0MBit

Interface Frequency (SDR/DDR)(MHz): 166 / 166

Interface Bandwidth: 333.0MByte/s

Interfaces: Octal

Qualification: Automotive

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IGB08N120S7

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数据:

简介: 1200 V, 8 A IGBT7 S7 in TO-263-3pin package

E[off]: 0.67mJ

E[on]: 0.73mJ

I[C](@ 25°) max: 20.0A

I[C](@ 100°) max: 13.0A

I[Cpuls] max: 24.0A

P[tot] max: 87.0W

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