INFINEON
Infineon 英飞凌专注于迎接现代社会的三大科技挑战： 高能效、 移动性和 安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。
TLD1120EL
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 非线性电路 / 开关电源电路数据:
简介: LITIX™ Basic TLD1120EL is a one channel high side driver IC with integrated output stages
V[S] max: 40.0V
Output Current: 180.0mA
I[q]: 0.1µA
Operating Temperature max: 150.0°C
Topology: Linear
V[Q] (multiple): 40.0 V
Tolerance: 7%
Short Circuit Protection: Yes
Inhibit: Yes
PWM: Yes
Open Load Detection: No
Control Inputs: 1.0
Output Channels: 1.0
PWM engine: No
Short GND Detection: No
Feedback Output: No
Language: SPICE
Product Category: Automotive Lighting ICs
Family: LITIX™ Basic
Currently planned availability until at least: 2038
TLD1124EL
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 非线性电路 / 开关电源电路数据:
简介: LITIX™ Basic TLD1124EL is a one channel high side driver IC with integrated output stages
V[S] max: 40.0V
Output Current: 180.0mA
I[q]: 0.1µA
Operating Temperature max: 150.0°C
Topology: Linear
V[Q] (multiple): 40.0 V
Tolerance: 7%
Short Circuit Protection: Yes
Inhibit: No
PWM: Yes
Open Load Detection: Yes
Control Inputs: 1.0
Output Channels: 1.0
PWM engine: No
Short GND Detection: Yes
Feedback Output: No
Language: SPICE
Product Category: Automotive Lighting ICs
Family: LITIX™ Basic
Currently planned availability until at least: 2038
TLD2131-3EP
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 非线性电路 / 开关电源电路数据:
简介: The LITIX™ Basic+ TLD2131-3EP is a triple channel high-side driver IC with integrated output stages
Topology: Linear
V[S] max: 40.0V
V[Q] (multiple): 40.0 V
Tolerance: 5%
Short Circuit Protection: Yes
PWM: Yes
Open Load Detection: Yes
I[q]: 0.1µA
Operating Temperature max: 150.0°C
Single LED short detection: Yes
Short GND Detection: Yes
PWM engine: No
Power Offloading: No
Output Channels: 3.0
Control Inputs: 1.0
Language: SPICE
Product Category: Automotive Lighting ICs
Output Current per channel max: 80.0mA
Parallelized Output Current: 240.0mA
Family: LITIX™ Basic+
Currently planned availability until at least: 2038
TLD2142-1EP
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 非线性电路 / 开关电源电路数据:
简介: The LITIX™ Basic+ TLD2142-1EP is a single channel high-side driver IC with integrated output stage.
Topology: Linear
V[S] max: 40.0V
V[Q] (multiple): 40.0 V
Tolerance: 4,33%
Short Circuit Protection: Yes
PWM: Yes
Open Load Detection: Yes
I[q]: 0.1µA
Operating Temperature max: 150.0°C
Control Inputs: 1.0
Output Channels: 1.0
Power Offloading: No
PWM engine: Yes
Short GND Detection: Yes
Single LED short detection: No
Language: SPICE
Product Category: Automotive Lighting ICs
Output Current per channel max: 240.0mA
Parallelized Output Current: 240.0mA
Family: LITIX™ Basic+
Currently planned availability until at least: 2038
TLD2141-3EP
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 非线性电路 / 开关电源电路数据:
简介: The LITIX™ Basic+ TLD2141-3EP is a triple channel high-side driver IC with integrated output stages
Topology: Linear
V[S] max: 40.0V
V[Q] (multiple): 40.0 V
Tolerance: 4,33%
Short Circuit Protection: Yes
PWM: Yes
Open Load Detection: Yes
I[q]: 0.1µA
Operating Temperature max: 150.0°C
Control Inputs: 1.0
Output Channels: 3.0
Power Offloading: No
PWM engine: Yes
Short GND Detection: Yes
Single LED short detection: No
Language: SPICE
Product Category: Automotive Lighting ICs
Output Current per channel max: 80.0mA
Parallelized Output Current: 240.0mA
Family: LITIX™ Basic+
Currently planned availability until at least: 2038
V[DRM]/ V[RRM (V)]: 5200.0V
I[TSM]: 100000.0A
I[TAVM]: 3880 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 172mm height 35mm / Ceramic
V[DRM] / V[RRM] [V]: 5200.0
I[TAVM]/T[C] [A/°C](@180° el sin): 3880/85
I[TSM] [A](@10ms, Tvj max): 100000.0
∫I2dt [A²s · 103](@10ms, Tvj max): 50000.0
V[T]/I[T] [V/kA](@Tvj max): 1.80/6.0
V[T0] [V](@T[vj max]) max: 0.93
r[T] [mΩ](@T[vj max]) max: 0.145
t[q] [µs]: 550.0
R[thJC] [K/kW](@180° el sin) max: 4.5
T[vj] [°C] max: 125.0
Clamping force [kn] max: 130.0
V[DRM]/ V[RRM (V)]: 2200.0V
I[TSM]: 91000.0A
I[TAVM]: 4340 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 150mm height 26mm / Ceramic
V[DRM] / V[RRM] [V]: 2200.0
I[TAVM]/T[C] [A/°C](@180° el sin): 4340/85
I[TSM] [A](@10ms, Tvj max): 91000.0
∫I2dt [A²s · 103](@10ms, Tvj max): 41400.0
V[T]/I[T] [V/kA](@Tvj max): 1.20/4.0
V[T0] [V](@T[vj max]) max: 0.77
r[T] [mΩ](@T[vj max]) max: 0.107
t[q] [µs]: 250.0
R[thJC] [K/kW](@180° el sin) max: 4.8
T[vj] [°C] max: 125.0
Clamping force [kn] max: 91.0
T2563N80TOHPR
分类: 半导体分立器件和附件 / 闸流晶体管数据:
简介: 8000 V Light Triggered Phase Control Thyristor Diode Disc
V[DRM]/ V[RRM (V)]: 8000.0V
I[TSM]: 90000.0A
I[TAVM]: 2300 (180 ° el sin)
Configuration: Light Triggered Phase Control Thyristor
Housing: Disc dia 172mm height 40mm / Ceramic
V[DRM] / V[RRM] [V]: 8000.0
I[TAVM]/T[C] [A/°C](@180° el sin): 2300/85
I[TSM] [A](@10ms, Tvj max): 90000.0
∫I2dt [A²s · 103](@10ms, Tvj max): 40500.0
V[T]/I[T] [V/kA](@Tvj max): 2.95/5.0
V[T0] [V](@T[vj max]) max: 1.2
r[T] [mΩ](@T[vj max]) max: 0.35
t[q] [µs]: 550.0
R[thJC] [K/kW](@180° el sin) max: 4.8
T[vj] [°C] max: 120.0
Clamping force [kn] max: 130.0
V[DRM]/ V[RRM (V)]: 8000.0V
I[TSM]: 90000.0A
I[TAVM]: 2620 (180 ° el sin)
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 172mm height 35mm / Ceramic
V[DRM] / V[RRM] [V]: 8000.0
I[TAVM]/T[C] [A/°C](@180° el sin): 2620/85
I[TSM] [A](@10ms, Tvj max): 90000.0
∫I2dt [A²s · 103](@10ms, Tvj max): 40500.0
V[T]/I[T] [V/kA](@Tvj max): 2.95/5.0
V[T0] [V](@T[vj max]) max: 1.27
r[T] [mΩ](@T[vj max]) max: 0.336
t[q] [µs]: 550.0
R[thJC] [K/kW](@180° el sin) max: 4.5
T[vj] [°C] max: 125.0
Clamping force [kn] max: 130.0
T3401N36TOFVT
分类: 半导体分立器件和附件 / 闸流晶体管数据:
简介: 3600 V electrical triggered phase control thyristor disc
Clamping force [kn] max: 91.0
Configuration: Electrical Triggered Phase Control Thyristor
Housing: Disc dia 150mm height 26mm / Ceramic
I[TAVM]/T[C] [A/°C](@180° el sin): 3560/85
I[TAVM]: 3560 (180 ° el sin)
I[TSM]: 87000.0A
I[TSM] [A](@10ms, Tvj max): 87000.0
R[thJC] [K/kW](@180° el sin) max: 5.0
T[vj] [°C] max: 125.0
V[DRM] / V[RRM] [V]: 3600.0
V[DRM]/ V[RRM (V)]: 3600.0V
V[T]/I[T] [V/kA](@Tvj max): 1,40/4.0
t[q] [µs]: 300.0
∫I2dt [A²s · 103](@10ms, Tvj max): 37850.0