Interfaces: Parallel Lead Ball Finish: Pure Sn Operating Temperature: None°C Operating Voltage: NoneV Organization (X x Y): 1Mb x 16 Peak Reflow Temp: 260.0°C Qualification: Industrial Speed: 45.0ns Operating Voltage(VCCQ): NoneV Density: 16384.0kBit
Interfaces: Parallel Lead Ball Finish: Sn/Ag/Cu Operating Temperature: None°C Operating Voltage: NoneV Organization (X x Y): 512Kb x 32 Peak Reflow Temp: 260.0°C Qualification: Industrial Speed: 25.0ns Operating Voltage(VCCQ): NoneV Density: 16384.0kBit
Lead Ball Finish: Sn/Ag/Cu Operating Temperature: None°C Operating Voltage(VCCQ): NoneV Operating Voltage: NoneV Organization (X x Y): 1Mb x 16 Qualification: Industrial Real Time Clock: Y Speed: 45.0ns Watchdog Timer: Y Interfaces: Parallel Peak Reflow Temp: 260.0°C Alarms: Y Density: 16384.0kBit
Operating Voltage(VCCQ): NoneV Operating Voltage: NoneV Organization (X x Y): 1Mb x 16 Peak Reflow Temp: 260.0°C Qualification: Industrial Speed: 25.0ns Operating Temperature: None°C Interfaces: Parallel Lead Ball Finish: Sn/Ag/Cu Density: 16384.0kBit
Alarms: Y Interfaces: Parallel Lead Ball Finish: Pure Sn Operating Voltage(VCCQ): NoneV Operating Voltage: NoneV Organization (X x Y): 512Kb x 16 Peak Reflow Temp: 260.0°C Real Time Clock: Y Watchdog Timer: Y Qualification: Industrial Speed: 45.0ns Operating Temperature: None°C Density: 8192.0kBit

N01S818HAT22IT

制造商: ONSEMI
数据:
分类: 微电路 / 半导体集成电路 / 数字集成电路 / 存储器 / 静态随机存储器(SRAM)

描述: 串行 SRAM 存储器,超低功率,1 Mb,1.7 - 2.2 V

状态: 量产中 Compliance: Pb A H P Type: Serial Density: 1 Mb Organization (bits): 128k x 8 fcycle Max (MHz): 20 VCC Min (V): 1.7 VCC Max (V): 2.2 Istandby Typ (µA): 1 Package Type: TSSOP-8 MSL Type: 3 MSL Temp (°C): 260 ON Target: Yes 参考价格: $2.5617

N01S818HAT22I

制造商: ONSEMI
数据:
分类: 微电路 / 半导体集成电路 / 数字集成电路 / 存储器 / 静态随机存储器(SRAM)

描述: 串行 SRAM 存储器,超低功率,1 Mb,1.7 - 2.2 V

状态: 量产中 Compliance: Pb A H P Type: Serial Density: 1 Mb Organization (bits): 128k x 8 fcycle Max (MHz): 20 VCC Min (V): 1.7 VCC Max (V): 2.2 Istandby Typ (µA): 1 Package Type: TSSOP-8 MSL Type: 3 MSL Temp (°C): 260 ON Target: Yes 参考价格: $2.9337

N01S830HAT22ET

制造商: ONSEMI
数据:
分类: 微电路 / 半导体集成电路 / 数字集成电路 / 存储器 / 静态随机存储器(SRAM)

描述: 串行 SRAM 存储器,1 Mb,超低功耗,2.5 至 5.5 V

状态: 量产中 Compliance: Pb A H P Type: Serial Density: 1 Mb Organization (bits): 128k x 8 fcycle Max (MHz): 20 VCC Min (V): 2.5 VCC Max (V): 5.5 Istandby Typ (µA): 4 Package Type: TSSOP-8 MSL Type: 3 MSL Temp (°C): 260 ON Target: No 参考价格: Price N/A

N01S830HAT22IT

制造商: ONSEMI
数据:
分类: 微电路 / 半导体集成电路 / 数字集成电路 / 存储器 / 静态随机存储器(SRAM)

描述: 串行 SRAM 存储器,1 Mb,超低功耗,2.5 至 5.5 V

状态: 量产中 Compliance: Pb A H P Type: Serial Density: 1 Mb Organization (bits): 128k x 8 fcycle Max (MHz): 20 VCC Min (V): 2.5 VCC Max (V): 5.5 Istandby Typ (µA): 4 Package Type: TSSOP-8 MSL Type: 3 MSL Temp (°C): 260 ON Target: Yes 参考价格: $2.9599

N01S830BAT22I

制造商: ONSEMI
数据:
分类: 微电路 / 半导体集成电路 / 数字集成电路 / 存储器 / 静态随机存储器(SRAM)

描述: 串行 SRAM 存储器,1 Mb,超低功耗,2.5 至 5.5 V

状态: 量产中 Compliance: Pb A H P Type: Serial Density: 1 Mb Organization (bits): 128k x 8 fcycle Max (MHz): 20 VCC Min (V): 2.5 VCC Max (V): 5.5 Istandby Typ (µA): 4 Package Type: TSSOP-8 MSL Type: 3 MSL Temp (°C): 260 ON Target: Yes 参考价格: $2.7131