Bank Switching: Y
Burst Length(Words): 2
ECC: Y
Family: QDR-IV
Frequency: 1066.0MHz
Lead Ball Finish: Sn/Ag/Cu
On-Die Termination: Y
Operating Temperature: None°C
Organization (X x Y): 8Mb x 18
Peak Reflow Temp: 260.0°C
Qualification: Commercial
Data Width: x 18
Architecture: QDR-IV
Read Latency (Cycles): 8.0
Operating Voltage: NoneV
Interfaces: Parallel
Density: 147456.0kBit
Density: 144.0MBit
Family: QDR-II
Lead Ball Finish: Sn/Ag/Cu
Operating Temperature: None°C
Operating Voltage: NoneV
Peak Reflow Temp: 260.0°C
Interfaces: Parallel
Frequency: 250.0MHz
Organization (X x Y): 2M x 36
Qualification: Commercial
Density: 72.0MBit
CY7C4142KV13-106FCXC
数据:
分类: 微电路 / 半导体集成电路 / 数字集成电路 / 存储器 / 静态随机存储器(SRAM)
描述: High-Performance QDR-IV Parallel Interface Memory with 1066 MHz Frequency and On-Die Termination for Commercial Applications
Architecture: QDR-IV
Bank Switching: Y
ECC: Y
Family: QDR-IV
Frequency: 1066.0MHz
Lead Ball Finish: Sn/Ag/Cu
On-Die Termination: Y
Operating Temperature: None°C
Organization (X x Y): 4Mb x 36
Peak Reflow Temp: 260.0°C
Qualification: Commercial
Read Latency (Cycles): 8.0
Data Width: x 36
Burst Length(Words): 2
Operating Voltage: NoneV
Interfaces: Parallel
Density: 147456.0kBit
Density: 144.0MBit
Architecture: Standard Sync, Flow-through
Bank Switching: N
Data Width: x 36
ECC: N
Family: Standard Sync
Frequency: 133.0MHz
Operating Temperature: None°C
Qualification: Industrial
Read Latency (Cycles): 1.0
Peak Reflow Temp: 260.0°C
On-Die Termination: N
Organization (X x Y): 2Mb x 36
Lead Ball Finish: Pure Sn
Operating Voltage: NoneV
Interfaces: Parallel
Density: 73728.0kBit
Density: 72.0MBit
Architecture: QDR-II+, ODT
Bank Switching: N
Burst Length(Words): 4
ECC: N
Family: QDR-II+, ODT
Lead Ball Finish: Sn/Ag/Cu
On-Die Termination: Y
Operating Temperature: None°C
Organization (X x Y): 4Mb x 36
Peak Reflow Temp: 260.0°C
Qualification: Industrial
Read Latency (Cycles): 2.5
Data Width: x 36
Frequency: 400.0MHz
Operating Voltage: NoneV
Interfaces: Parallel
Density: 147456.0kBit
Density: 144.0MBit
Bank Switching: N
ECC: N
Family: Standard Sync
Lead Ball Finish: None
On-Die Termination: N
Operating Voltage(VCCQ): NoneV
Organization (X x Y): 512Kb x 18
Qualification: Industrial
Read Latency (Cycles): 1.0
Operating Voltage: NoneV
Architecture: Standard Sync, Pipeline SCD
Operating Temperature: None°C
Data Width: x 18
Interfaces: Parallel
Density: 9216.0kBit
Density: 9.0MBit
Architecture: Standard Sync, Flow-through
Bank Switching: N
ECC: N
Frequency: 100.0MHz
Lead Ball Finish: Ni/Pd/Au
On-Die Termination: N
Operating Temperature: None°C
Peak Reflow Temp: 260.0°C
Organization (X x Y): 256Kb x 36
Data Width: x 36
Operating Voltage: NoneV
Interfaces: Parallel
Density: 9216.0kBit
Density: 9.0MBit
Qualification: Automotive
Family: QDR-II
Lead Ball Finish: Sn/Ag/Cu
Operating Voltage: NoneV
Peak Reflow Temp: 260.0°C
Operating Temperature: None°C
Interfaces: Parallel
Frequency: 250.0MHz
Organization (X x Y): 4M x 18
Qualification: Commercial
Density: 72.0MBit
Architecture: Standard Sync, Flow-through
Bank Switching: N
Data Width: x 36
ECC: N
Frequency: 133.0MHz
Lead Ball Finish: Ni/Pd/Au
On-Die Termination: N
Operating Temperature: None°C
Peak Reflow Temp: 260.0°C
Read Latency (Cycles): 1.0
Family: Standard Sync
Qualification: Commercial
Organization (X x Y): 1Mb x 36
Operating Voltage: NoneV
Interfaces: Parallel
Density: 36864.0kBit
Density: 36.0MBit
Architecture: NoBL, Pipeline
Bank Switching: N
Burst Length(Words): 4
ECC: N
Family: NoBL
Frequency: 167.0MHz
Lead Ball Finish: Pure Sn
On-Die Termination: N
Operating Temperature: None°C
Organization (X x Y): 1Mb x 18
Qualification: Industrial
Read Latency (Cycles): 2.0
Data Width: x 18
Peak Reflow Temp: 260.0°C
Operating Voltage: NoneV
Interfaces: Parallel
Density: 18432.0kBit
Density: 18.0MBit