INFINEON

Infineon 英飞凌专注于迎接现代社会的三大科技挑战：高能效、移动性和安全性，为汽车和工业功率器件、芯片卡和安全应用提供半导体和系统解决方案。英飞凌的产品素以高可靠性、卓越质量和创新性著称，并在模拟和混合信号、射频、功率以及嵌入式控制装置领域掌握尖端技术。

T3160N16TOFVT

分类: 半导体分立器件和附件 / 闸流晶体管
数据:

简介: 1600 V phase control thyristor disc

V[DRM]/ V[RRM (V)]: 1600.0V I[TSM]: 57000.0A I[TAVM]: 3160 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 111mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 1600.0 I[TAVM]/T[C] [A/°C](@180° el sin): 3160/85 I[TSM] [A](@10ms, Tvj max): 57000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 16245.0 V[T]/I[T] [V/kA](@Tvj max): 1.37/6.0 V[T0] [V](@T[vj max]) max: 0.85 r[T] [mΩ](@T[vj max]) max: 0.082 t[q] [µs]: 250.0 R[thJC] [K/kW](@180° el sin) max: 8.5 T[vj] [°C] max: 125.0 Clamping force [kn] max: 95.0

T3710N04TOFVT

分类: 半导体分立器件和附件 / 闸流晶体管
数据:

简介: 600 V phase control thyristor disc

V[DRM]/ V[RRM (V)]: 400.0V I[TSM]: 60000.0A I[TAVM]: 3710 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 100mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 400.0 I[TAVM]/T[C] [A/°C](@180° el sin): 3710/85 I[TSM] [A](@10ms, Tvj max): 60000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 18000.0 V[T]/I[T] [V/kA](@Tvj max): 1.50/15.0 V[T0] [V](@T[vj max]) max: 0.75 r[T] [mΩ](@T[vj max]) max: 0.048 t[q] [µs]: 200.0 R[thJC] [K/kW](@180° el sin) max: 12.5 T[vj] [°C] max: 140.0 Clamping force [kn] max: 65.0

T1503NH80TOH

分类: 半导体分立器件和附件 / 闸流晶体管
数据:

简介: 8000 V Light Triggered Phase Control Thyristor Diode Disc

V[DRM]/ V[RRM (V)]: 8000.0V I[TSM]: 55000.0A Configuration: Light Triggered Phase Control Thyristor Housing: Disc dia 150mm height 40mm / Ceramic V[DRM] / V[RRM] [V]: 8000.0 I[TAVM]/T[C] [A/°C](@180° el sin): 1770/85 I[TSM] [A](@10ms, Tvj max): 55000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 15125.0 V[T]/I[T] [V/kA](@Tvj max): 3.00/4.0 V[T0] [V](@T[vj max]) max: 1.24 r[T] [mΩ](@T[vj max]) max: 0.44 t[q] [µs]: 550.0 R[thJC] [K/kW](@180° el sin) max: 6.3 T[vj] [°C] max: 120.0 Clamping force [kn] max: 91.0

T2810N18TOFVT

分类: 半导体分立器件和附件 / 闸流晶体管
数据:

V[DRM]/ V[RRM (V)]: 1800.0V I[TSM]: 50000.0A I[TAVM]: 2810 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 111mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 1800.0 I[TAVM]/T[C] [A/°C](@180° el sin): 2810/85 I[TSM] [A](@10ms, Tvj max): 50000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 12500.0 V[T]/I[T] [V/kA](@Tvj max): 2.35/11.0 V[T0] [V](@T[vj max]) max: 0.9 r[T] [mΩ](@T[vj max]) max: 0.112 t[q] [µs]: 300.0 R[thJC] [K/kW](@180° el sin) max: 8.5 T[vj] [°C] max: 125.0 Clamping force [kn] max: 95.0

TLD5097EP

分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 非线性电路 / 开关电源电路
数据:

简介: The TLD5097EP is a LED boost controller with built in protection features

Topology: Multitopology DC-DC controller Short Circuit Protection: Yes PWM: No Open Load Detection: Yes Operating Temperature max: 150.0°C f[SW] max: 500.0kHz I[q]: 10.0µA Tolerance: 3.3% Dimming: Analog and Digital Type: Multitopology V[S] max: 45.0V

T2810N16TOFVT

分类: 半导体分立器件和附件 / 闸流晶体管
数据:

V[DRM]/ V[RRM (V)]: 1600.0V I[TSM]: 50000.0A I[TAVM]: 2810 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 111mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 1600.0 I[TAVM]/T[C] [A/°C](@180° el sin): 2810/85 I[TSM] [A](@10ms, Tvj max): 50000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 12500.0 V[T]/I[T] [V/kA](@Tvj max): 2.35/11.0 V[T0] [V](@T[vj max]) max: 0.9 r[T] [mΩ](@T[vj max]) max: 0.112 t[q] [µs]: 300.0 R[thJC] [K/kW](@180° el sin) max: 8.5 T[vj] [°C] max: 125.0 Clamping force [kn] max: 95.0

T1851N70TOH

分类: 半导体分立器件和附件 / 闸流晶体管
数据:

V[DRM]/ V[RRM (V)]: 7000.0V I[TSM]: 48000.0A I[TAVM]: 1830 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 120mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 7000.0 I[TAVM]/T[C] [A/°C](@180° el sin): 1830/85 I[TSM] [A](@10ms, Tvj max): 48000.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 11500.0 V[T]/I[T] [V/kA](@Tvj max): 2.65/3.0 V[T0] [V](@T[vj max]) max: 1.22 r[T] [mΩ](@T[vj max]) max: 0.49 t[q] [µs]: 600.0 R[thJC] [K/kW](@180° el sin) max: 6.5 T[vj] [°C] max: 125.0 Clamping force [kn] max: 65.0

T2200N16H100

分类: 半导体分立器件和附件 / 闸流晶体管
数据:

简介: 1600 V phase control thyristor disc

Clamping force [kn] max: 45.0 Housing: Disc dia 100mm height 26mm / Ceramic I[TAVM]/T[C] [A/°C](@180° el sin): 2170/85 I[TAVM]: 2170 (180 ° el sin) I[TSM] [A](@10ms, Tvj max): 44000.0 R[thJC] [K/kW](@180° el sin) max: 12.6 T[vj] [°C] max: 125.0 V[DRM] / V[RRM] [V]: 1600.0 V[DRM]/ V[RRM (V)]: 1600.0V ∫I2dt [A²s · 103](@10ms, Tvj max): 9680.0

T2480N28TOFVT

分类: 半导体分立器件和附件 / 闸流晶体管
数据:

V[DRM]/ V[RRM (V)]: 2800.0V I[TSM]: 43500.0A I[TAVM]: 2480 (180 ° el sin) Configuration: Electrical Triggered Phase Control Thyristor Housing: Disc dia 111mm height 26mm / Ceramic V[DRM] / V[RRM] [V]: 2800.0 I[TAVM]/T[C] [A/°C](@180° el sin): 2480/85 I[TSM] [A](@10ms, Tvj max): 43500.0 ∫I2dt [A²s · 103](@10ms, Tvj max): 9460.0 V[T]/I[T] [V/kA](@Tvj max): 1.43/3.0 V[T0] [V](@T[vj max]) max: 0.95 r[T] [mΩ](@T[vj max]) max: 0.154 t[q] [µs]: 400.0 R[thJC] [K/kW](@180° el sin) max: 8.5 T[vj] [°C] max: 125.0 Clamping force [kn] max: 95.0

TLD5541-1QV

分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 非线性电路 / 开关电源电路
数据:

简介: The TLD5541-1QV is a synchronous MOSFET H-Bridge DC-DC controller with built in protection features and SPI interface

V[S] max: 40.0V f[SW] max: 700.0kHz Tolerance: 3.0% Short Circuit Protection: Yes Inhibit: Yes PWM: Yes Open Load Detection: Yes I[q]: 1.5µA Operating Temperature max: 150.0°C Topology: DC-DC Synchronous H-Bridge with SPI