2nd harmonic (dBc): -129 3rd harmonic (dBc): -138 Frequency of harmonic distortion measurement (MHz): 0.02 Architecture: Voltage FB Number of channels: 2 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12.6 GBW (typ) (MHz): 50 BW at Acl (MHz): 110 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 105 Vn at flatband (typ) (nV√Hz): 5.9 Vn at 1 kHz (typ) (nV√Hz): 5.9 Iq per channel (typ) (mA): 0.7 Vos (offset voltage at 25°C) (max) (mV): 1.3 Rail-to-rail: In, Out Features: Output short-circuit protection, Overload power limit Rating: Automotive Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 120 Input bias current (max) (pA): 300000 Offset drift (typ) (µV/°C): 1 Iout (typ) (mA): 30 2nd harmonic (dBc): -129 3rd harmonic (dBc): -138 Frequency of harmonic distortion measurement (MHz): 0.02

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.5 Rail-to-rail: In, Out GBW (typ) (MHz): 8 Slew rate (typ) (V/µs): 6.5 Vos (offset voltage at 25°C) (max) (mV): 1.5 Iq per channel (typ) (mA): 0.6 Vn at 1 kHz (typ) (nV√Hz): 18 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.53 Features: EMI Hardened CMRR (typ) (dB): 103 Iout (typ) (A): 0.05 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.5 Input common mode headroom (to positive supply) (typ) (V): 0.5 Output swing headroom (to negative supply) (typ) (V): 0.05 Output swing headroom (to positive supply) (typ) (V): -0.05

2nd harmonic (dBc): -129 3rd harmonic (dBc): -138 Frequency of harmonic distortion measurement (MHz): 0.02 Architecture: Voltage FB Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12.6 GBW (typ) (MHz): 50 BW at Acl (MHz): 110 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 105 Vn at flatband (typ) (nV√Hz): 5.9 Vn at 1 kHz (typ) (nV√Hz): 5.9 Iq per channel (typ) (mA): 0.7 Vos (offset voltage at 25°C) (max) (mV): 1.3 Rail-to-rail: In, Out Features: Output short-circuit protection, Overload power limit, Shutdown Rating: Catalog Operating temperature range (°C): -40 to 125 CMRR (typ) (dB): 120 Input bias current (max) (pA): 730000 Offset drift (typ) (µV/°C): 1 Iout (typ) (mA): 30 2nd harmonic (dBc): -129 3rd harmonic (dBc): -138 Frequency of harmonic distortion measurement (MHz): 0.02

Output swing headroom (to positive supply) (typ) (V): 0.005 THD + N at 1 kHz (typ) (%): 0.0001 Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.2 Vos (offset voltage at 25°C) (max) (mV): 0.05 GBW (typ) (MHz): 40 Features: EMI Hardened, Zero Crossover, e-Trim™ Slew rate (typ) (V/µs): 30 Rail-to-rail: In, Out Offset drift (typ) (µV/°C): 0.15 Iq per channel (typ) (mA): 3.8 Vn at 1 kHz (typ) (nV√Hz): 9.8 CMRR (typ) (dB): 120 Rating: Catalog Operating temperature range (°C): -40 to 125 Input bias current (max) (pA): 1 Iout (typ) (A): 0.065 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): -0.1 Input common mode headroom (to positive supply) (typ) (V): -0.1 Output swing headroom (to negative supply) (typ) (V): 0.005 Output swing headroom (to positive supply) (typ) (V): 0.005 THD + N at 1 kHz (typ) (%): 0.0001

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In, Out GBW (typ) (MHz): 10.6 Slew rate (typ) (V/µs): 32 Vos (offset voltage at 25°C) (max) (mV): 1 Iq per channel (typ) (mA): 2.4 Vn at 1 kHz (typ) (nV√Hz): 7 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.25 Features: EMI Hardened, MUX Friendly CMRR (typ) (dB): 115 Iout (typ) (A): 0.065 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0.048 Output swing headroom (to positive supply) (typ) (V): -0.048

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In, Out GBW (typ) (MHz): 11 Slew rate (typ) (V/µs): 33 Vos (offset voltage at 25°C) (max) (mV): 1 Iq per channel (typ) (mA): 2.4 Vn at 1 kHz (typ) (nV√Hz): 6.8 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.25 Features: EMI Hardened, MUX Friendly, Small Size CMRR (typ) (dB): 110 Iout (typ) (A): 0.073 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0.025 Output swing headroom (to positive supply) (typ) (V): -0.025

Number of channels: 4 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 10.6 Slew rate (typ) (V/µs): 25 Vos (offset voltage at 25°C) (max) (mV): 1.7 Iq per channel (typ) (mA): 2.6 Vn at 1 kHz (typ) (nV√Hz): 8.5 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1.25 Features: Cost Optimized, EMI Hardened, Small Size CMRR (typ) (dB): 110 Iout (typ) (A): 0.06 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 0.06 Output swing headroom (to positive supply) (typ) (V): -0.06

3rd harmonic (dBc): -130 Frequency of harmonic distortion measurement (MHz): 1 Architecture: FET / CMOS Input, Voltage FB Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 6 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 12.6 GBW (typ) (MHz): 250 BW at Acl (MHz): 600 Acl, min spec gain (V/V): 1 Slew rate (typ) (V/µs): 750 Vn at flatband (typ) (nV√Hz): 5.3 Vn at 1 kHz (typ) (nV√Hz): 9.5 Iq per channel (typ) (mA): 16 Vos (offset voltage at 25°C) (max) (mV): 0.25 Rail-to-rail: No Rating: Catalog Operating temperature range (°C): -40 to 85 CMRR (typ) (dB): 100 Input bias current (max) (pA): 20 Offset drift (typ) (µV/°C): 1 Iout (typ) (mA): 70 2nd harmonic (dBc): -110 3rd harmonic (dBc): -130 Frequency of harmonic distortion measurement (MHz): 1

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 2.7 Rail-to-rail: In, Out GBW (typ) (MHz): 11 Slew rate (typ) (V/µs): 33 Vos (offset voltage at 25°C) (max) (mV): 1 Iq per channel (typ) (mA): 2.48 Vn at 1 kHz (typ) (nV√Hz): 6.8 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 0.25 Features: EMI Hardened, MUX Friendly CMRR (typ) (dB): 110 Iout (typ) (A): 0.073 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): 0 Output swing headroom (to negative supply) (typ) (V): 0.025 Output swing headroom (to positive supply) (typ) (V): -0.025

Number of channels: 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 40 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V): 4.5 Rail-to-rail: In to V-, Out GBW (typ) (MHz): 10.6 Slew rate (typ) (V/µs): 25 Vos (offset voltage at 25°C) (max) (mV): 1.7 Iq per channel (typ) (mA): 2.6 Vn at 1 kHz (typ) (nV√Hz): 8.5 Rating: Automotive Operating temperature range (°C): -40 to 125 Offset drift (typ) (µV/°C): 1.25 Features: Cost Optimized, EMI Hardened CMRR (typ) (dB): 110 Iout (typ) (A): 0.06 Architecture: CMOS Input common mode headroom (to negative supply) (typ) (V): 0 Input common mode headroom (to positive supply) (typ) (V): -2 Output swing headroom (to negative supply) (typ) (V): 0.06 Output swing headroom (to positive supply) (typ) (V): -0.06