EAS/Avalanche Energy: 2000.0mJ
I[D ]: 2.4A
I[D(lim)] min: 15.0A
Load Current: 2.4A
Mounting: SMT
P[tot] max: 21.0W
V[DS] max: 42.0V
Control Interface: Discrete
I[L(nom)]: 2.4A
Recommended Operating Voltage max: 42.0V
Operating Temperature max: 150.0°C
E[AS](Energy capability): 2000.0mJ
t[off](Turn OFF time) max: 100.0µs
t[on](Turn ON time) max: 100.0µs
Classification: -
Channels: 1.0
R[DS (on)](@ Tj = 25°C): 90.0mΩ
R[DS (on)](@ Tj = 150°C) max: 240.0mΩ
Diagnostics: -
Protection strategy: Latch
更多
Nominal Load Current per channel: 2.4A
I[L](Short Circuit Current): 10.0A
Family: Classic HITFET™ 12V
Currently planned availability until at least: 2038
BSP77E6433
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
描述: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.
EAS/Avalanche Energy: 250.0mJ
I[D ]: 2.17A
I[D(lim)] min: 10.0A
I[L(LIM)] min: 10.0A
Mounting: SMT
P[tot] max: 3.8W
V[DS] max: 42.0V
Load Current: 2.8A
Control Interface: Discrete
I[L(nom)]: 2.17A
Operating Temperature max: 150.0°C
E[AS](Energy capability): 250.0mJ
t[off](Turn OFF time) max: 100.0µs
t[on](Turn ON time) max: 100.0µs
Classification: -
Channels: 1.0
R[DS (on)](@ Tj = 25°C): 90.0mΩ
R[DS (on)](@ Tj = 150°C) max: 240.0mΩ
Diagnostics: -
Protection strategy: Auto-restart
更多
Nominal Load Current per channel: 2.17A
I[L](Short Circuit Current): 10.0A
Recommended Operating Voltage max: 42.0V
Family: Classic HITFET™ 12V
Currently planned availability until at least: 2038
BSP78
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
描述: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions
EAS/Avalanche Energy: 500.0mJ
I[D ]: 3.0A
I[D(lim)] min: 18.0A
I[L(LIM)] min: 18.0A
Mounting: SMT
P[tot] max: 3.8W
V[DS] max: 42.0V
Load Current: 4.0A
Control Interface: Discrete
I[L(nom)]: 3.0A
Operating Temperature max: 150.0°C
E[AS](Energy capability): 500.0mJ
t[off](Turn OFF time) max: 100.0µs
t[on](Turn ON time) max: 100.0µs
Classification: -
Channels: 1.0
R[DS (on)](@ Tj = 25°C): 35.0mΩ
R[DS (on)](@ Tj = 150°C) max: 90.0mΩ
Diagnostics: -
Protection strategy: Auto-restart
更多
Nominal Load Current per channel: 3.0A
I[L](Short Circuit Current): 18.0A
Recommended Operating Voltage max: 42.0V
Family: Classic HITFET™ 12V
Currently planned availability until at least: 2038
BTS118D
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
描述: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.
EAS/Avalanche Energy: 2000.0mJ
I[D ]: 2.4A
I[D(lim)] min: 15.0A
I[L(LIM)] min: 15.0A
Mounting: SMT
P[tot] max: 21.0W
V[DS] max: 42.0V
Load Current: 3.2A
Control Interface: Discrete
I[L(nom)]: 2.4A
Operating Temperature max: 150.0°C
E[AS](Energy capability): 2000.0mJ
t[off](Turn OFF time) max: 100.0µs
t[on](Turn ON time) max: 100.0µs
Classification: -
Channels: 1.0
R[DS (on)](@ Tj = 25°C): 90.0mΩ
R[DS (on)](@ Tj = 150°C) max: 240.0mΩ
Diagnostics: -
Protection strategy: Latch
更多
Nominal Load Current per channel: 2.4A
I[L](Short Circuit Current): 15.0A
Recommended Operating Voltage max: 42.0V
Family: Classic HITFET™ 12V
Currently planned availability until at least: 2038
BTS142D
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
描述: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.
EAS/Avalanche Energy: 3500.0mJ
I[D ]: 4.6A
I[D(lim)] min: 30.0A
I[L(LIM)] min: 30.0A
Mounting: SMT
P[tot] max: 178.0W
V[DS] max: 42.0V
Load Current: 5.5A
Control Interface: Discrete
I[L(nom)]: 4.6A
Operating Temperature max: 150.0°C
E[AS](Energy capability): 3500.0mJ
t[off](Turn OFF time) max: 170.0µs
t[on](Turn ON time) max: 100.0µs
Classification: -
Channels: 1.0
R[DS (on)](@ Tj = 25°C): 27.0mΩ
R[DS (on)](@ Tj = 150°C) max: 68.0mΩ
Diagnostics: -
Protection strategy: Latch
更多
Nominal Load Current per channel: 4.6A
I[L](Short Circuit Current): 30.0A
Recommended Operating Voltage max: 42.0V
Family: Classic HITFET™ 12V
Currently planned availability until at least: 2038
BTS3110N
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
描述: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.
EAS/Avalanche Energy: 150.0mJ
I[D ]: 1.4A
I[D(lim)] min: 5.0A
Load Current: 1.4A
Mounting: SMT
P[tot] max: 3.8W
V[DS] max: 42.0V
Control Interface: Discrete
I[L(nom)]: 1.4A
Recommended Operating Voltage max: 42.0V
Operating Temperature max: 150.0°C
E[AS](Energy capability): 150.0mJ
t[off](Turn OFF time) max: 100.0µs
t[on](Turn ON time) max: 100.0µs
Classification: -
Channels: 1.0
R[DS (on)](@ Tj = 25°C): 190.0mΩ
R[DS (on)](@ Tj = 150°C) max: 480.0mΩ
Diagnostics: -
Protection strategy: Latch
更多
Nominal Load Current per channel: 1.4A
I[L](Short Circuit Current): 5.0A
Family: Classic HITFET™ 12V
Currently planned availability until at least: 2038
BTS3118N
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
描述: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions
EAS/Avalanche Energy: 250.0mJ
I[D ]: 2.17A
I[D(lim)] min: 10.0A
Load Current: 2.17A
Mounting: SMT
P[tot] max: 3.8W
V[DS] max: 42.0V
Control Interface: Discrete
I[L(nom)]: 2.17A
Recommended Operating Voltage max: 42.0V
Operating Temperature max: 150.0°C
E[AS](Energy capability): 250.0mJ
t[off](Turn OFF time) max: 100.0µs
t[on](Turn ON time) max: 100.0µs
Classification: -
Channels: 1.0
R[DS (on)](@ Tj = 25°C): 90.0mΩ
R[DS (on)](@ Tj = 150°C) max: 240.0mΩ
Diagnostics: -
Protection strategy: Latch
更多
Nominal Load Current per channel: 2.17A
I[L](Short Circuit Current): 10.0A
Family: Classic HITFET™ 12V
Currently planned availability until at least: 2038
EAS/Avalanche Energy: 3500.0mJ
I[D ]: 4.6A
I[D(lim)] min: 24.0A
Load Current: 4.6A
Mounting: SMT
P[tot] max: 59.0W
V[DS] max: 42.0V
Control Interface: Discrete
I[L(nom)]: 4.6A
Recommended Operating Voltage max: 42.0V
Operating Temperature max: 150.0°C
E[AS](Energy capability): 3500.0mJ
t[off](Turn OFF time) max: 120.0µs
t[on](Turn ON time) max: 120.0µs
Classification: -
Channels: 1.0
R[DS (on)](@ Tj = 25°C): 27.0mΩ
R[DS (on)](@ Tj = 150°C) max: 68.0mΩ
Diagnostics: -
Protection strategy: Latch
更多
Nominal Load Current per channel: 4.6A
I[L](Short Circuit Current): 30.0A
Family: Classic HITFET™ 12V
Currently planned availability until at least: 2038
BTS3205G
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
描述: The BTS3205G is a one channel low-side power switch in PG-DSO-8-24 package providing embedded protective functions
EAS/Avalanche Energy: 65.0mJ
I[D ]: 0.35A
I[D(lim)] min: 0.6A
Mounting: SMT
P[tot] max: 0.78W
V[DS] max: 42.0V
Load Current: 0.52A
Diagnostic Features: Output Status
Control Interface: Discrete
I[L(nom)]: 0.52A
Recommended Operating Voltage max: 42.0V
Operating Temperature max: 150.0°C
E[AS](Energy capability): 65.0mJ
t[off](Turn OFF time) max: 45.0µs
t[on](Turn ON time) max: 38.0µs
Classification: -
Channels: 1.0
R[DS (on)](@ Tj = 25°C): 900.0mΩ
R[DS (on)](@ Tj = 150°C) max: 2400.0mΩ
Diagnostics: -
更多
Protection strategy: Auto-restart
Nominal Load Current per channel: 0.52A
I[L](Short Circuit Current): 0.6A
Family: Classic HITFET™ 12V
Currently planned availability until at least: 2038
BTS3134D
数据:
分类: 微电路 / 半导体集成电路 / 模拟集成电路 / 其他模拟集成电路
描述: N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded protection functions.
EAS/Avalanche Energy: 3000.0mJ
I[D ]: 3.5A
I[D(lim)] min: 18.0A
Load Current: 3.5A
Mounting: SMT
P[tot] max: 3.8mW
V[DS] max: 42.0V
Control Interface: Discrete
I[L(nom)]: 3.5A
Recommended Operating Voltage max: 42.0V
Operating Temperature max: 150.0°C
E[AS](Energy capability): 3000.0mJ
t[off](Turn OFF time) max: 100.0µs
t[on](Turn ON time) max: 100.0µs
Classification: -
Channels: 1.0
R[DS (on)](@ Tj = 25°C): 45.0mΩ
R[DS (on)](@ Tj = 150°C) max: 100.0mΩ
Diagnostics: -
Protection strategy: Latch
更多
Nominal Load Current per channel: 3.5A
I[L](Short Circuit Current): 18.0A
Family: Classic HITFET™ 12V
Currently planned availability until at least: 2038